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    GE. C150 Search Results

    GE. C150 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    MC1505L Rochester Electronics LLC A/D Converter Visit Rochester Electronics LLC Buy
    2SC1505-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    G17DC15023313HR Amphenol Communications Solutions Dsub Slim R/A Dip, High Density 15 Position Receptacle VGA, Sunk 4.27mm, 15u\\ Au, Footprint 1.6mm, 2 Rows, Pitch 1.0mm, Post distance 1.4mm, PCB hole distance 2.3mm, Tail 3.05mm, Tape and Reel with Cap, Blue 661C, PIP, Halogon Free Visit Amphenol Communications Solutions
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    GE. C150 Price and Stock

    Abracon Corporation AMPMGEC-15.0000T3

    MEMS Crystal Oscillator 15MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGEC-15.0000T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGEC-15.0000T3 Reel 3,000
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    Avnet Abacus AMPMGEC-15.0000T3 113 Weeks 3,000
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    Abracon Corporation AMPMGEC-15.0000

    MEMS Crystal Oscillator 15MHz ?50ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGEC-15.0000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGEC-15.0000 Bulk 1,000
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    Avnet Abacus AMPMGEC-15.0000 113 Weeks 1,000
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    Abracon Corporation AMPMGEC-15.0000T

    MEMS Crystal Oscillator 15MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGEC-15.0000T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGEC-15.0000T Reel 1,000
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    Avnet Abacus AMPMGEC-15.0000T 113 Weeks 1,000
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    GE. C150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


    Original     		PDF VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor

    RP11A

    Abstract: AX6648 s 9412 W83L950 elitegroup computer C286-2 MB3887 15-F44-01 elitegroup nel d32 43
    Text: 5 4 3 2 1 SOCKET 479 Banias/Dothan 478 uFCPGA G553 PAG E 2,3,4 D D HOST BUS 100MHZ 4X LCD DISPLAY NORTH BRIDGE P A GE 12 DDR DRAM 100/133M/166MHz 2X 855GM/GME MCH-M CRT DISPLAY P A GE 12 SYS POWER P A GE 9,10 REGULAR VCCP VCCA VCC_MCH P A G E 5,6,7,8 CHARGER


    Original     		PDF 100MHZ 855GM/GME 100/133M/166MHz CH7011 66MHZ 14MHZ G553-1-4-01 5-F44-010010 5-F44-011000 5-F44-013000 RP11A AX6648 s 9412 W83L950 elitegroup computer C286-2 MB3887 15-F44-01 elitegroup nel d32 43

    CW20C104K

    Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
    Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,


    Original     		PDF AGA100M050 SKA100M050 AGA100M063 SKA100M063 AFK477M10F24T AFK686M16D16T AFK107M16D16T AFK157M16X16T AFK158M16H32T AFK226M16C12T CW20C104K CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K

    cb346

    Abstract: CB355 CB815 CB397
    Text: Rev: 030508 Ge ne ra l De sc ript ion Fe a t ure s ♦ Demonstrates Key Functions of DS33X11 Ethernet Transport Chipset ♦ Includes DS26521 T1/E1 SCT, DS3170 T3/E3 SCT, Transformers, BNC, and RJ48 Network Connectors and Termination ♦ Includes Ethernet PHY Supporting 10/100 and


    Original     		PDF DS33X11 DS26521 DS3170 MMC2107 DS33X11, DS26528, DS3170, DS33X11 048MHZ RB123 cb346 CB355 CB815 CB397

    Untitled

    Abstract: No abstract text available
    Text: Rev: 031008 Ge ne ra l De sc ript ion The DS33X162 demo kit DK is an easy-to-use evaluation board for the DS33X162 Ethernet-overPDH device. The demo kit contains an option for either T3/E3 or T1/E1 serial links. All serial links are complete with line interface, transformers, and


    Original     		PDF DS33X162 DS26528 DS3174 MMC2107 DS33X162, DS26528, DS3174, DS33X162 CB757 RPB136

    ICS954310

    Abstract: CX20551 CX201290009 PC87541 quanta foxconn CH747 LID591 R1551 quanta computer
    Text: 5 MODEL: BD1 MotherBoard 4 3 2 1 MODEL : BD1 MB REV: CHANGE LIST: 2B Page2. Add R540; Stuff R124, R125, RP18 for GE sku only; Stuff R423 and Unstuff R413, R414, R415 for all sku Page3. Thermal sensor power change net : +3V -> +3VSUS; Add Q43, R565 for Thermaltrip circuit; Delete Q30, R386; Unstuff R384


    Original     		PDF RC0402 RC0603 1003JN27 CVA9115MN10; RC0805 RC1206; 200KHz 130K/F LM393 DTC144EU ICS954310 CX20551 CX201290009 PC87541 quanta foxconn CH747 LID591 R1551 quanta computer

    kb3926qf d2

    Abstract: ene kb3926qf d2 kb3926 d2 ene kb3926qf RT8206B 62882c RT8111 RTL8111DL RTL8111d RT8111DL
    Text: 1 2 3 4 5 6 7 8 Jones/Cujo 2.0 UP6/7 BLOCK DIAGRAM PCB STACK UP 6L Dis. 01 27MHz LAYER 1 : TOP A HDMI CON CPU LAYER 2 : SGND DDRIII DDRIII-SODIMM1 LAYER 3 : IN1 LAYER 4 : IN2 LAYER 5 : SVCC DDRIII DDRIII-SODIMM2 LAYER 6 : BOT 800/1066 MT/s PAGE 13 CRT N10M-GE


    Original     		PDF 27MHz 1333MT/s N10M-GE N10P-GE RJ-45 768KHz 25MHz 150MB 150MB kb3926qf d2 ene kb3926qf d2 kb3926 d2 ene kb3926qf RT8206B 62882c RT8111 RTL8111DL RTL8111d RT8111DL

    S10601

    Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150


    Original     		PDF S04050H S04070H S04100H S20600 S2061 NCM400C 2N1604 NCR400B S4003LS1 C10802 S10601 C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 S4003LS3

    irg7ph28u

    Abstract: DIODE 272
    Text: IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode


    Original     		PDF IRG7PH28UD1PbF IRG7PH28UD1MPbF 1300Vpk IRG7PH28UD1PbF/IRG7PH28UD1MPbF O-247AC O-247AD JESD47F) irg7ph28u DIODE 272

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E


    Original     		PDF IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E


    Original     		PDF IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD

    IRG7PH42UD1M

    Abstract: 30A, 600v RECTIFIER DIODE
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk D-020D IRG7PH42UD1M 30A, 600v RECTIFIER DIODE

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk IRG7PH42U

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk IRFPE30 O-247AC IRG7PH42U

    IRG7PH42UD1PBF

    Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A

    C45E

    Abstract: C147U C45U C45PB C150PA scr stud 280 C150PB C52T N2030 C46D
    Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C 45, 46 GE TYPE C147 C 5 0 , 52 C l 50, 152 2N1909-16 2N 1792-98 JE O E C C350 C 6 0 , 62 2N 2023-30 E L E C T R IC A L S P E C IFIC A T IO N S | V O LTA G E RAN GE 2b 1200 II 25-1200 2 5 120Ü 500-1300 25 500 1}


    OCR Scan     		PDF 2N1909-16 2N1792-98 2N2028 C147C 2N191S 2N1797 2N2029 C147D 2N1916 2N1798 C45E C147U C45U C45PB C150PA scr stud 280 C150PB C52T N2030 C46D

    C945 p 331

    Abstract: K4004 P331 B772 Q63100 C945 p331 K4100 63100-P2390-C995 f7101 B59335 M155 P2390
    Text: Vergleichsiiste für geänderte Bestellnummern Reference List for Altered Ordering Codes Kaltleiter PTC Thermistors Typ Vorgängertyp Best.-Nr. alt Best.-Nr. neu Typ (Vorgängertyp) Best.-Nr. alt Best.-Nr. neu Type (previous type) Old ordering code New ordering code


    OCR Scan     		PDF A1701 B59011-F102-V3* B59012-F102-V3 B59013-F102-V3* B59701 B59701-A1120-A* B59701-A1130-A* 3100Q63100Q63100Q63100Q63100Q63100Q63100C B59011 -C1000-A70 C945 p 331 K4004 P331 B772 Q63100 C945 p331 K4100 63100-P2390-C995 f7101 B59335 M155 P2390

    C60N

    Abstract: GE C150e GE C150 ge c46b C145T GE C150M C45U scr c52u C60M C150 SCR
    Text: PHASE CONTROL S C R ’s HIGH CURRENT 55 TO 200 AM PERES C45, 46 GE T Y P E C145 C50, Ü2 C150, 152 2N1909-1 G 2N1792-98 JEDEC C60, 62 C350 C178 2N2023-30 ELEC TR IC AL SPECIFICATIONS 25*600 VOLTAGE RANGE 500-1200 25-800 500-1300 25-600 500-1300 500-1300 110


    OCR Scan     		PDF 2N1909-1 2N1792-98 2N2023-30 fus62H 2N1915 2N1797 2N2029 C350C 2N1916 2N1798 C60N GE C150e GE C150 ge c46b C145T GE C150M C45U scr c52u C60M C150 SCR

    LR kbpc3510

    Abstract: kbp 3510 kbu808 Rectifier s01cc KBU80B C3502-AKBPC3508 pc 2501 kbp02 BPC802 KBU diode bridge
    Text: < § Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. S in g le -p h a se , fu ll-w a v e b rid ge re ctifiers in 4 -p in D u a l-in -L in e pa ckages. 50 V to 10 0 0 V VRRM . 1A (l0 ), 3 0 A p e a k o n e -h a lf c y c le surge. E poxy p a c k a g e has U L 9 4 V -0 flam e re ta rd a n t rating. Lead s o ld e ra b le per M IL -S T D


    OCR Scan     		PDF 005-D RDF005-RDF10 C15/25/35 RKBPC3501 C3S10 KBPC3500 LR kbpc3510 kbp 3510 kbu808 Rectifier s01cc KBU80B C3502-AKBPC3508 pc 2501 kbp02 BPC802 KBU diode bridge

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF