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Carling Technologies TIGC57-6S-BL-NBL SWITCH ROCKER SPDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TIGC57-6S-BL-NBL	Bulk			10	1 - 10 $13.645 100 $13.645 1000 $13.645 10000 $13.645	Buy Now
Mouser Electronics	TIGC57-6S-BL-NBL					1 - 10 - 100 $10.8 1000 $10.12 10000 $10.12	Get Quote
Master Electronics	TIGC57-6S-BL-NBL					1 - 10 $11.97 100 $7.7 1000 $5.7 10000 $5.7	Buy Now
Infineon Technologies AG SIGC57T120R3LEX1SA3 IGBT 1200V 50A DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIGC57T120R3LEX1SA3	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	SIGC57T120R3LEX1SA3	Waffle Pack			4,122	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIGC57T120R3EX1SA4 Trans IGBT Chip N-CH 1200V 50A DIE Waffle - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3EX1SA4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC57T120R3EX1SA4	Waffle Pack		20 Weeks	4,122	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIGC57T120R3LX1SA2 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3LX1SA2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC57T120R3LX1SA2	Waffle Pack			64	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIGC57T120R3EX1SA3 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3EX1SA3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC57T120R3EX1SA3	Waffle Pack			64	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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GC57 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GC570		GENNUM	DynamEQ II WDRC IC		Original	PDF

GC57 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
hearing instrument WDRC Abstract: GB570 GC570 50k variable resistor connection 42K8 Text: DynamEQ II WDRC IC GB570/GC570 - DATA SHEET FEATURES DEVICE DESCRIPTION • dual channel signal processing The DynamEQ® II product family is a second generation Wide Dynamic Range Compression WDRC system. • 2nd (4th) order state variable filter GB570 (GC570) incorporates 12 dB/oct (24 dB/oct) filtering	Original	PDF	GB570/GC570 GB570 GC570) C-101, hearing instrument WDRC GB570 GC570 50k variable resistor connection 42K8
RTL8111D Abstract: PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia Text: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH Cantiga	Original	PDF	KB3925 12VSUS PR136 PD8001 PC8002 PR280 PR8004 PR282 PU8001 PU8002 RTL8111D PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia
kb3925 Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s Text: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH	Original	PDF	KB3925 12VSUS 1SS355 GC147 033U/16V PMN45EN 100KOHM SI4800BDY kb3925 isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
SiS968 Abstract: kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108 Text: D C B A 5 Internal KB CRT LCD DDR2 32MX16M X4 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.28 07:26:12 +07'00' CBB Touch Pad Synaptics EC SPI FLASH 4 ATI GPU M72-S ࣯ࣳࣞ࣪ ࣰࣩࣳ࣡ 632 BGA Debug Connector	Original	PDF	9LPR600C Z62Ha 32MX16M 9P935AF SIS672 M72-S MAX6657MSA 667MHz/533MHz 133MHz SiS968 kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108
GC114 Abstract: 88E8056 ASUS 88e8056 Marvell Marvell 88E8056 asus f3 NB8M hr5 connector Intel PM965 NB-965GM1-FSB Text: 5 RTC_BTY PCB 4 PART for BOM only Function Function ASUS Partnumber LOCATION RTC BTY 07G016412032 GPU NB8M 02G190012900 2 1 Temp Modify 1012: Delete EC23,31,32,34,39 already have in location Delete EC35,36 No space to add Delete GC114,115,120,121,122,123,116,117,118,119 No space	Original	PDF	07G016412032 02G190012900 GC114 ICS9LPR363AGLF-T Z37S/E 32Mx16 PM965 /GM965 TL431 AP9452GG 88E8056 ASUS 88e8056 Marvell Marvell 88E8056 asus f3 NB8M hr5 connector Intel PM965 NB-965GM1-FSB
BUL48 Abstract: No abstract text available Text: S * 5 G S - T H O M S O N ¡^ O T e « S 7 B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSW ITCHING TRAN SISTO R . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS • MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS	OCR Scan	PDF	BUL48 BUL48 O-220 gc25780 712T237
2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan	PDF
5252 F 0921 Abstract: No abstract text available Text: LFOOAB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT . VERY LOW DROPOUT VOLTAGE 0.45V . VERY LOW QUIESCENT CURRENT (TYP. 50 nA IN OFF MODE, 500\|^A IN ON MODE) . OUTPUT CURRENT UP TO 500 mA . LOGIC-CONTROLLED ELECTRONIC SHUTDOWN . OUTPUT VOLTAGES OF 1.25; 1.5; 2.5; 2.7; 3;	OCR Scan	PDF	O-220, ISOWATT220, 0068772-B 0078180/B 5252 F 0921
BACC47EF1 Abstract: BACC47 BACC66 TRI-STAR BACC47EG1 BACC47EF3 BACC47EG BACC47EF2 arinc 600 coax pin size 8 317-2222-301 Text: ARINC 404 Types: • Environmental • Non-Environmental Shell Configurations: • Plug / Receptacle Pin or Socket S One Gang, type “A” Shell S One Gang, type “B” Shell S Two Gang, type “B” shell S Three Gang, type “B” shell S Four Gang, type “B” shell	OCR Scan	PDF
2d6 transistor Abstract: No abstract text available Text: f Z 7 S G S -T H O M ^ 7# S O N [» » fflL IO T l !* ! S TB 8 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 Vdss RDS on Id 500 V < 0.85 Û 8A TYPICAL R d s (o ii) = 0.7 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED	OCR Scan	PDF	STB8NA50 O-262) O-263) O-263 2d6 transistor
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS	OCR Scan	PDF	BUL216
Untitled Abstract: No abstract text available Text: [ f W Q J M t S T IP IM S W U IW 80C186EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • • 40°C to + 85°C Operating Tem perature Range In te g ra te d F e a tu re S et — L o w -P o w e r S ta tic CPU C o re	OCR Scan	PDF	80C186EB-16, 16-BIT 16-Blt
Untitled Abstract: No abstract text available Text: LORAL m C R O ü J A VE-FS I SIE D • S S aD 13 a O D D D 4 t ä 44b "T - 0-7 -1 1 HIGH POWER POSITIVE BIAS PLATED HEATSINK GUNN DIODES DESCRIPTION APPLICATIONS T he FSI S e m ico n d u cto r Plated H eatsin k d io d e chip consists o f a silver h eat sink chem ically b o n d e d t o th e b u lk se m ico n d u ctor	OCR Scan	PDF	55fl013D 006NO«
TRANSISTOR BO 352 Abstract: BUL510 Text: SGS-THOMSON iiueraoowgi *7/ BUL510 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS i VERY HIGH SWITCHING SPEED:	OCR Scan	PDF	BUL510 BUL510 O-220 CC26290 GC57390 TRANSISTOR BO 352

Untitled Abstract: No abstract text available Text: SGS-THOMSON Z i RülDeæi[Liero iDei ! STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB6NA 60 V dss R D S o n 600 V < 1 .2 Q Id 6 .5 A • ■ . . ■ . . . TYPICAL RDS(on) = 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED	OCR Scan	PDF	STB6NA60 O-262) O-263) O-262 O-263
BU941ZB Abstract: ZPFI Text: S G S -T H O M S O N K fflO O K LO T M D O S I B U 94i z / B U 94i z p B U 9 4 1 ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA • VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER ■ HIGH OPERATING JUNCTION TEMPERATURE	OCR Scan	PDF	BU941ZP BU941ZPFI BU941ZB ZPFI
P6nA60 Abstract: 6na60 NA60FI Text: *57 TYPE STP6N A 60 STP6NA60FI . . . • ■ . ■ 6 60 6 60 SGS-THOMSON iLiOT !Q £I stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on Id 600 V 600 V < 1.2 a < 1.2 a 6.5 A 3.9 A TYPICAL R DS(on) = 1 Q ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	PDF	STP6NA60FI P6nA60 6na60 NA60FI
Untitled Abstract: No abstract text available Text: SCS-THOMSON liainmgiigiLgCTiaimniBS BU941ZT/BU941ZTFI BU941ZSM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . POWER PACKAGE SPECICALLY	OCR Scan	PDF	BU941ZT/BU941ZTFI BU941ZSM BU941ZT BU941ZTFI Dab55b3
Untitled Abstract: No abstract text available Text: SGS-THOMSON [¡»œ^iera « BU941/BU941P BU941 PFl HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . VERY RUGGED BIPOLARTECHNOLOGY . HIGH OPERATING JUNCTION	OCR Scan	PDF	BU941/BU941P BU941 BU941 P025C
Untitled Abstract: No abstract text available Text: S G S - T H O M ¿ 5 S T P 4 N A 60 S T P 4 N A 6 0 FI S O N ¡U È T O « 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP4NA60 STP4NA60FI dss 600 V 600 V R DS on Id 2.2 2.2 4.3 A 2.7 A < < a a • TYPICAL RDS(on) = 1 85 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	PDF	STP4NA60 STP4NA60FI STP4NA60/FI ISQWATT220
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	PDF	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
941t Abstract: BU941T Text: S G S -T H O M S O N b u 94i t / b u 94i t f i B U 941 S M HIGH VO LTAG E IGNITION COIL DRIVER NPN POW ER D ARLING TO N PRELIMINARY DATA • ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE ■ WIDE RANGE OF PACKAGES ■ POWER PACKAGE SPECIFICALLY	OCR Scan	PDF	-10TM 941TFI BU941SM 941t BU941T
C5727 Abstract: No abstract text available Text: Zi! SGS-THOMSON R8D lS S l[LliSTl^©iBOi STB3NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB3NA 80 V dss RDS(on) Id 800 V < 4 .5 Q. 3.1 A • ■ . . ■ . . . TYPICAL RDS(on) = 3.5 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED	OCR Scan	PDF	STB3NA80 O-262) O-263) O-26tronics. C5727
Untitled Abstract: No abstract text available Text: ¿57 SGS-THOMSON ¡UÈTO « STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP6NA60 STP6NA60FI • . ■ . . . . V dss RDS on 600 V 600 V < 1 .2 Id a 6.5 A < 1 .2 0. 3 .9 A TYPICAL RDS(on) = 1 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	PDF	STP6NA60 STP6NA60FI pSTP6NA60/FI ISQWATT220

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GC57 Search Results

GC57 Price and Stock

Carling Technologies TIGC57-6S-BL-NBL

Infineon Technologies AG SIGC57T120R3LEX1SA3

Infineon Technologies AG SIGC57T120R3EX1SA4

Infineon Technologies AG SIGC57T120R3LX1SA2

Infineon Technologies AG SIGC57T120R3EX1SA3

GC57 Datasheets (1)

GC57 Datasheets Context Search

hearing instrument WDRC

RTL8111D

kb3925

SiS968

GC114

BUL48

2n7588

5252 F 0921

BACC47EF1

2d6 transistor

Untitled

Untitled

Untitled

TRANSISTOR BO 352

Untitled

BU941ZB

P6nA60

Untitled

Untitled

Untitled

hep 154 silicon diode

941t

C5727

Untitled