5962-3870702
Abstract: No abstract text available
Text: SCOPE: SWITCHED-CAPACITOR VOLTAGE CONVERTER Device Type 01 Generic Number ICL7660AM x /883B SMD Number 5962-3870702 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM GC TV PA JA Mil-Std-1835 MACY1-X8
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ICL7660AM
/883B
Mil-Std-1835
Mil-Std-883:
Mil-Std-883.
Mil-Std-883
ICL7660AMxx/883B
5962-3870702
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GC smd diode
Abstract: ICL7660AMJA ICL7660AMTV/883B TO99 package ICL7660
Text: SCOPE: SWITCHED-CAPACITOR VOLTAGE CONVERTER Device Type 01 Generic Number ICL7660AM x /883B SMD Number 5962-3870702 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM GC TV PA JA Mil-Std-1835 MACY1-X8
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ICL7660AM
/883B
Mil-Std-1835
Mil-Std-1835
20ameters
Mil-Std-883:
Mil-Std-883.
Mil-Std-883
ICL7660AMxx/883B
/883B
GC smd diode
ICL7660AMJA
ICL7660AMTV/883B
TO99 package
ICL7660
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes IC SMD Type Product specification 2SC2734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 UHF frequency converter +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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2SC2734
OT-23
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SMD diode DB3
Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required
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12-Bit
AD7545
12-Bit
20-Lead
20-Terminal
AD7545
P-20A
SMD diode DB3
SMD diode N20
SMD diode DB6
8c 617 transistor
AD7545JN
AD7545KN
AD7545SQ
AD7545TQ
DB10
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oled display driver
Abstract: No abstract text available
Text: MXED101 30V, 192-Channel OLED Display Driver Features • CMOS technology • 192 output channels • Programmable output current control • The option of using 3.3V or 5V logic supply voltage • 55 MHz clock frequency • A function for cascading more than one device
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MXED101
192-Channel
MXED101
DS-MXHV826-R0A
oled display driver
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ALLEN BRADLEY DIPS
Abstract: smd diode 708 power combiner toroid Allen Bradley POTENTIOMETERS dipswitch ic 6116 marcon capacitor LT5511 RF2138 RF2140
Text: DC426B DEMO BOARD QUICK START GUIDE Description: The DC426B demo circuit board is intended to demonstrate the capabilities of the LT5511 high signal level upconverting mixer IC for 1900MHz infrastructure applications. The LT5511 mixer IC is designed to meet the high linearity requirements of cable TV
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DC426B
LT5511
1900MHz
17d3430
ALLEN BRADLEY DIPS
smd diode 708
power combiner toroid
Allen Bradley POTENTIOMETERS
dipswitch
ic 6116
marcon capacitor
RF2138
RF2140
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Untitled
Abstract: No abstract text available
Text: CHR2421-QEG RoHS compliant 23.75-24.5GHz Dual Rx Channel GaAs Monolithic Microwave IC in SMD leadless package Description The CHR2421-CHR2421-QEGQEG is a monolithic multifunction dual channel receiver in K-Band which integrates low noise amplifiers and mixers providing an IF
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CHR2421-QEG
CHR2421-CHR2421-QEGQEG
R2421
DSCHR2421-QEG2031
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nec 2501
Abstract: CJ05-000 Allen Bradley POTENTIOMETERS power combiner toroid PFC-W0603R 2501 OPTO ALLEN BRADLEY DIPS LT5511 LL1005-FH3N9J CHEMICON marcon cap
Text: DC426B DEMO BOARD QUICK START GUIDE Description: The DC426B demo circuit board is intended to demonstrate the capabilities of the LT5511 high signal level upconverting mixer IC for 1900MHz infrastructure applications. The LT5511 mixer IC is designed to meet the high linearity requirements of cable TV
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DC426B
LT5511
1900MHz
17dOption
50-OHM
GRM36COG1R0J025AQ
GRM36COG2R7J025AQ
nec 2501
CJ05-000
Allen Bradley POTENTIOMETERS
power combiner toroid
PFC-W0603R
2501 OPTO
ALLEN BRADLEY DIPS
LL1005-FH3N9J
CHEMICON marcon cap
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KPED-3820CGCK
Abstract: No abstract text available
Text: 3.8x2.0mm DOME LENS SMD CHIP LED LAMP KPED-3820CGCK GREEN Features Description lLOW on GaAs substrate Light Emitting Diode. l3.8mmx2.0mm SMT LED,3.2mm THICKNESS. POWER CONSUMPTION. lIDEAL FOR BACKLIGHT AND INDICATOR. l VARIOUS l PACKAGE The Green source color devices are made with InGaAlP
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KPED-3820CGCK
500PCS
DSAB0927
APR/04/2003
KPED-3820CGCK
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APT2012CGCK
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP APT2012CGCK GREEN Features Description lLOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode. l2.0mmx1.25mm SMT LED,0.75mm THICKNESS. lWIDE VIEWING ANGLE. The Green source color devices are made with lIDEAL FOR BACKLIGHT AND INDICATOR.
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APT2012CGCK
2000PCS
DSAA6057
MAR/16/2003
APT2012Cerature
APT2012CGCK
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BAS70xW DIODE SCHOTTKY BARRIER DIODES DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available. FEATURES
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BAS70xW
OT-323
BAS70WL-AL3-R
BAS70WG-AL3-R
BAS70AWL-AL3-R
BAS70AWG-AL3-R
BAS70CWL-AL3-R
BAS70CWG-AL3-R
BAS70SWL-AL3-R
BAS70SWG-AL3-R
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GC smd diode
Abstract: Schottky diode MARKING ED QW-R601-017 smd schottky diode marking ed sot-23 Marking 017 smd sot-23 marking gc G0 SOT-23 smd diode ED
Text: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. FEATURES
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BAS70x
OT-23
BAS70L-AE3-R
BAS70G-AE3-R
BAS70AL-AE3-R
BAS70AG-AE3-R
BAS70CL-AE3-R
BAS70CG-AE3-R
BAS70SL-AE3-R
BAS70SG-AE3-R
GC smd diode
Schottky diode MARKING ED
QW-R601-017
smd schottky diode marking ed
sot-23 Marking 017
smd sot-23 marking gc
G0 SOT-23
smd diode ED
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm SMD CHIP LED LAMP PRELIMINARY SPEC APED3528CGCK Features Description lSINGLE COLOR. l SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. GREEN The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode. lIDEAL FOR BACKLIGHTING.
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APED3528CGCK
500PCS
DSAD3539
SEP/10/2003
3528C
APED3528CGCK
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GC smd diode
Abstract: smd transistor A1 sot-23 smd marking gc K2 SOT23-3 sot-23 Marking 017 smd sot-23 AE3 smd sot-23 marking gc smd transistor AE3 smd diode marking sot-23 diode marking ED
Text: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. FEATURES
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BAS70x
OT-23
BAS70xL
BAS70-AE3-R
BAS70L-AE3-R
BAS70A-AE3-R
BAS70AL-AE3-R
BAS70C-AE3-R
BAS70CL-AE3-R
BAS70S-AE3-R
GC smd diode
smd transistor A1 sot-23
smd marking gc
K2 SOT23-3
sot-23 Marking 017
smd sot-23 AE3
smd sot-23 marking gc
smd transistor AE3
smd diode marking sot-23
diode marking ED
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAS70x DIODE SCH OT T K Y BARRI ER DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. ̈
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BAS70x
OT-23
BAS70L-AE3-R
BAS70G-AE3-R
BAS70AL-AE3-R
BAS70AG-AE3-R
BAS70CL-AE3-R
BAS70CG-AE3-R
BAS70SL-AE3-R
BAS70SG-AE3-R
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gc 5.5V 1.0F
Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Text: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage
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MXED101
192-Channel
MXED101TP)
MXED101DI)
MXED101
192-output
DS-MXED101-R9
gc 5.5V 1.0F
AN 17823
17823
OLED driver IC
MXED101DI
MXED101TP
5.5V 1.0f GC
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IR PHOTO DIODE
Abstract: mpc 1230 DC503A diode 717 smd power combiner toroid power combiner broadband transformers ALLEN BRADLEY DIPS 1800mhz rf frequency power amplifier circuit 631 opto smd diode 708
Text: DC503A DEMO BOARD QUICK START GUIDE Description: The DC503A demo circuit board is intended to demonstrate the capabilities of the LT5512 downconverting mixer IC for cable infrastructure applications. The LT5512 Figure 1 is a broadband high signal level mixer IC optimized for high linearity
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DC503A
LT5512
LT5512
an43-4321
IR PHOTO DIODE
mpc 1230
diode 717 smd
power combiner toroid
power combiner broadband transformers
ALLEN BRADLEY DIPS
1800mhz rf frequency power amplifier circuit
631 opto
smd diode 708
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MXED101
Abstract: oled display driver oled row driver
Text: MXED101 30V, 192-Channel OLED Display Driver Features • • • • • • • • • • • CMOS technology 192 output channels Programmable output current control The option of using 3.3V or 5V logic supply voltage 55MHz clock frequency A function for cascading more than one device
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MXED101
192-Channel
55MHz
oled display driver
oled row driver
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smd marking gc
Abstract: BAS70 BAS70A BAS70A-AE3-R BAS70-AE3-R BAS70C-AE3-R G0 SOT-23
Text: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES 3 DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. 1 2 SOT-23
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BAS70x
OT-23
BAS70xL
BAS70-AE3-R
BAS70L-AE3-R
BAS70A-AE3-R
BAS70AL-AE3-R
BAS70C-AE3-R
BAS70CL-AE3-R
smd marking gc
BAS70
BAS70A
BAS70A-AE3-R
BAS70-AE3-R
BAS70C-AE3-R
G0 SOT-23
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smd marking gc
Abstract: 2SC2734
Text: Transistors SMD Type Silicon NPN Epitaxial 2SC2734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 UHF frequency converter +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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2SC2734
OT-23
smd marking gc
2SC2734
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1202 smd diode
Abstract: SMD 20A smd 1203 5 DIODE SMD 55 smd symbols 1201 Z3 SMD TO-220 package jg smd Av2020
Text: SEMTECH CORP 2 IE D • 7^ fll3cH3':l DDDS234 4 ■ 3-07 SEMTECH CORPORATIOIM MICROELECTRONICS DIVISION CENTER-TAP, RECTIFIER IN HERMETIC ISOLATED TO 220 PACKAGE Designed for use in switching power supplies, inverters and as free-wheeling diodes. 1201 1202
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DDDS234
O-220
SM883
1202 smd diode
SMD 20A
smd 1203 5
DIODE SMD 55
smd symbols
1201
Z3 SMD
TO-220 package
jg smd
Av2020
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GC smd diode
Abstract: IOA10 smd marking gc diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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STO-220
DF30JC4
tec40
GC smd diode
IOA10
smd marking gc diode
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30
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IXGH22N50BU1
22N50BU
B2-13
22N50BU1
22NS0BU1S
----------------TVJ-125
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