Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GATE-SOURCE ZENER Search Results

    GATE-SOURCE ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GATE-SOURCE ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gate-source zener

    Abstract: p-channel 200V TC6320 TC6320TG high voltage pulser
    Text: TC6320 Initial Release N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated gate-source resistor Integrated gate-source zener diode Low threshold


    Original     		PDF TC6320 TC6320TG -150mA -200mA gate-source zener p-channel 200V TC6320 high voltage pulser

    mark G1 SOT-23

    Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		PDF LP1030D LP1030D DSFP-LP1030D NR101512 mark G1 SOT-23 sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: L21e
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		PDF LP1030D LP1030D DSFP-LP1030D NR011613 SOT-23 MOSFET P-CHANNEL a1 1- mark L21e

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated GATE-to-SOURCE resistor Integrated GATE-to-SOURCE Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds Free from secondary breakdown


    Original     		PDF TC6320 TC6320 DSFP-TC6320 D012913

    PMOSFET

    Abstract: tc8020 PEAK TRAY tx qfn 8x8 nmosfet
    Text: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V


    Original     		PDF TC8020 TC8020 56-lead DSFP-TC8020 C091112 PMOSFET PEAK TRAY tx qfn 8x8 nmosfet

    tray qfn 8x8

    Abstract: TC8020 nmosfet TC8020K6-G
    Text: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V


    Original     		PDF TC8020 TC8020 56-lead DSFP-TC8020 B051512 tray qfn 8x8 nmosfet TC8020K6-G

    TC8220

    Abstract: N mosfet 100v 500A 7SN2 TC8220K6-G DFN PACKAGE thermal resistance
    Text: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance


    Original     		PDF TC8220 TC8220 12-Lead DSFP-TC8220 A120910 N mosfet 100v 500A 7SN2 TC8220K6-G DFN PACKAGE thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds


    Original     		PDF TC7320 TC7320 32-lead DSFP-TC7320 C122208

    TC8220K6-G

    Abstract: TC8220 P-MOSFET DFN 3x4 GN112 A01141 logic gate P-mosfet N-mosfet P-mosfet pair 125OC MD1822
    Text: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance


    Original     		PDF TC8220 TC8220 12-Lead DSFP-TC8220 A011411 TC8220K6-G P-MOSFET DFN 3x4 GN112 A01141 logic gate P-mosfet N-mosfet P-mosfet pair 125OC MD1822

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ►► High voltage Vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low threshold, Low on-resistance


    Original     		PDF TC8220 TC8220 12-Lead DSFP-TC8220 B080713

    TC8220

    Abstract: N-mosfet P-mosfet pair MD1822 7SN2
    Text: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode


    Original     		PDF TC8220 TC8220 12-Lead DSFP-TC8220 A021711 N-mosfet P-mosfet pair MD1822 7SN2

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: No abstract text available
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds


    Original     		PDF LP1030D LP1030D DSFP-LP1030D A031414 SOT-23 MOSFET P-CHANNEL a1 1- mark

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds


    Original     		PDF TC6320 TC6320 DSFP-TC6320 D012913

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds


    Original     		PDF TC6320 TC6320 DSFP-TC6320 D011513

    SiC JFET

    Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
    Text: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY


    Original     		PDF BIP05 SiC JFET ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab

    Untitled

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance


    Original     		PDF TC6215 TC6215 DSFP-TC6215 A122208

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)


    Original     		PDF KTS1C1S250

    Untitled

    Abstract: No abstract text available
    Text: NUD3048 FET Switch The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it


    Original     		PDF NUD3048 NUD3048/D

    0.18 um CMOS parameters

    Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
    Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors


    Original     		PDF 10-3/K] 0.18 um CMOS parameters poly silicon resistor pepi c 0.18 um CMOS technology World transistors

    STB3NC90

    Abstract: STB3NC90Z 1574T
    Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE


    Original     		PDF STB3NC90Z STB3NC90 STB3NC90 STB3NC90Z 1574T

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice

    20A marking zener diode

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels


    Original     		PDF TC6215 TC6215TG DSFP-TC6215 A111108 20A marking zener diode

    TC6215

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels


    Original     		PDF TC6215 TC6215 DSFP-TC6215 A122208

    injector MOSFET driver

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET MLP1N06CL Motorola Preferred Device These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain


    OCR Scan     		PDF MLP1N06CL MLP1N06CL injector MOSFET driver