Untitled
Abstract: No abstract text available
Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220 RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF740LC,
SiHF740LC
18-Jul-08
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irf740lc
Abstract: No abstract text available
Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220 RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF740LC,
SiHF740LC
12-Mar-07
irf740lc
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IRF7406GPBF
Abstract: 96259
Text: PD -96259 IRF7406GPbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free A D 1 8 S 2 7 D S 3 6 D G 4 5 D
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IRF7406GPbF
EIA-481
EIA-541.
IRF7406GPBF
96259
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IRF740LC
Abstract: SiHF740LC SiHF740LC-E3
Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220 RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF740LC,
SiHF740LC
O-220
18-Jul-08
IRF740LC
SiHF740LC-E3
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Untitled
Abstract: No abstract text available
Text: PD -96259 IRF7406GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free S S S G A D 1 8 2 7 D 3 6 D 4 5
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IRF7406GPbF
EIA-481
EIA-541.
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IRF470
Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Text: Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost Introduction Fast switching of power MOSFETs requires rapid transfer of the gate charge in a short period of time. High peak output current capability Control ICs can deliver high current spikes for fast switching, but the
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AN-944A:
AN-937B:
IRF470
IR2110 equivalent
power MOSFET IRF740 driver circuit
IR2110 gate driver for mosfet
irf740 equivalent
driver circuit for MOSFET IR2110
IR2112 equivalent
gate drive circuit for power MOSFET IRF740
irf740 mosfet
IRF740LC
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irf510 switch
Abstract: irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch IRFZ44 mosfet IRFZ44 IRF540 IRF510 application note gate drive for mosfet irfz44 power MOSFET IRF740 driver circuit
Text: Application Note 24 Micrel Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty hanced . Subsequently, the gate-to-drain capacitance requires more current due to the changing drain voltage, which steals from the available gate-drive current of the MOSFET
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IRF7101
Abstract: d 1497
Text: PD - 95203 IRF7404PbF Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D
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IRF7404PbF
EIA-481
EIA-541.
IRF7101
d 1497
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Untitled
Abstract: No abstract text available
Text: PD - 95203 IRF7404PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l 1 8 S 2 7 S 3 6 4 5 S G A D VDSS = -20V
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IRF7404PbF
EIA-481
EIA-541.
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F7101
Abstract: IRF7101
Text: PD - 96127A IRF7404QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS on = 0.040Ω
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6127A
IRF7404QPbF
relia461
EIA-481
EIA-541.
F7101
IRF7101
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Untitled
Abstract: No abstract text available
Text: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V
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IRF7403PbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 96127A IRF7404QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free 1 8 S 2 7 S 3 6 4 5 S G A D VDSS = -20V D D D RDS on = 0.040Ω
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6127A
IRF7404QPbF
EIA-481
EIA-541.
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IRF7406
Abstract: No abstract text available
Text: PD - 95302 IRF7406PbF Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l A D 1 8 S 2 7 D S 3 6 D G 4 5 D S
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IRF7406PbF
EIA-481
EIA-541.
IRF7406
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EIA-541
Abstract: IRF7101 IRF7403PBF
Text: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V
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IRF7403PbF
EIA-481
EIA-541.
EIA-541
IRF7101
IRF7403PBF
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f1010
Abstract: flyback transformer 63a irf 1490 6-0A36
Text: PD- 94828 IRF740APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRF740APbF
O-220AB
f1010
flyback transformer 63a
irf 1490
6-0A36
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power MOSFET IRF740
Abstract: No abstract text available
Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
TA17424
IRF740
power MOSFET IRF740
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SiHF740S
Abstract: No abstract text available
Text: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration • Available in Tape and Reel 0.55 Available RoHS* • Dynamic dV/dt Rating
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IRF740S,
SiHF740S
SMD-220
12-Mar-07
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irf740 mosfet
Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF740
O-220AB
irf740 mosfet
power MOSFET IRF740
transistor IRF740
TA17424
IRF740
TB334
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irlm2502
Abstract: how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208
Text: Using Power MOSFETs with Power Manager Devices April 2008 Application Note AN6048 Introduction Power MOSFETs are increasingly being used to switch local power supplies on PCB assemblies. The Lattice ispPAC -POWR1208 can be used in several ways to provide intelligent control of these devices for power supply
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AN6048
-POWR1208
ispPAC-POWR1208
AN6043,
1-800-LATTICE
ispPACPOWR1208"
irlm2502
how mosfets connect parallel
IRF3716
FDS6679
MBT50P03HDL
an6048
Si2314EDS
IRF7410
FDS6064N3
POWR1208
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IRF740LC
Abstract: SiHF740LC SiHF740LC-E3
Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF740LC,
SiHF740LC
11-Mar-11
IRF740LC
SiHF740LC-E3
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Untitled
Abstract: No abstract text available
Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF740A,
SiHF740A
2002/95/EC
O-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF740A,
SiHF740A
O-220
12-Mar-07
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IRF470
Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740
Text: International d iiRectifier D e sig n T ip s IN TE R N A TIO N A L R E C TIFIER • A P P LIC A T IO N S ENG. - 23 3 K AN S A S ST • E LS E G U N D O , CA. 9 0 2 4 5 - TE L 310 322-3331 • F A X (310)322-3332 LOW GATE CHARGE HEXFETS SIMPLIFY GATE DRIVE AND LOWER COST
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90245-TEL
AN-944A:
AN-937B:
IRF470
LRF740
IR2110 equivalent
IR2110 gate driver for mosfet
h bridge irf740
IRF470 mosfet
1rf740
IR2112 equivalent
power MOSFET IRF740 driver circuit
gate drive circuit for power MOSFET IRF740
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irf840 mosfet drive circuit diagram
Abstract: 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit IRF510 application note power MOSFET IRF740 driver circuit MOSFET IRF740 as switch irf510 switch power MOSFET IRF610 circuit diagram of mosfet based power supply
Text: Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty Introduction The proper marriage of a MOSFET driver to a power MOS FET is essential for optimized switch performance. Designing for adequate gate drive, resulting in fast rise and fall times of
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OCR Scan
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MIC4416
OT-143
IRF7413
MIC4416/17
irf840 mosfet drive circuit diagram
7170 MOSFET
MIC44XX
IRFZ44 mosfet switching circuit
IRF510 application note
power MOSFET IRF740 driver circuit
MOSFET IRF740 as switch
irf510 switch
power MOSFET IRF610
circuit diagram of mosfet based power supply
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