GAP1000
Abstract: GAP2000 GAP3000 GAP500 GAP100 GAP3000 GPD GPD optoelectronics PHOTO GAP DETECTOR GAP5000 GAP300
Text: GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 OPTOELECTRONICS CORP. Large Area InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP 500 GAP 1000
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GAP500
850nm
1300nm
1550nm
GAP1000
GAP2000
GAP3000
MIL-I-45208.
TA-NWT-00093)
MIL-STD-883
GAP1000
GAP2000
GAP3000
GAP500
GAP100
GAP3000 GPD
GPD optoelectronics
PHOTO GAP DETECTOR
GAP5000
GAP300
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GAP500
Abstract: GAP1000
Text: GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 OPTOELECTRONICS CORP. Large Area InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP 500 GAP 1000
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GAP500
850nm
1300nm
1550nm
MIL-I-45208.
TA-NWT-00093)
MIL-STD-883
GAP500
GAP1000
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UV photodiodes
Abstract: Photodiodes UV diode 280 nm 617 320 520nm UV diode 100 nm to 280 nm UV diode 250 nm 400nm uv JEP5-400
Text: JEP5 and JEP5-400 GaP UV Photodiodes GaP UV Photodiodes JEP5 150 100 50 540 560 500 520 480 440 460 400 420 300 320 280 240 260 200 220 380 JEP5-400 340 360 milliamps per watt 200 Wavelength, nm GaP UV Photodiodes 540 560 520 480 500 460 440 420 400 360 380
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JEP5-400
520nm
150mA/W
440nm
10kHz
500pf
400nm
UV photodiodes
Photodiodes
UV diode 280 nm
617 320
520nm
UV diode 100 nm to 280 nm
UV diode 250 nm
400nm uv
JEP5-400
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str 380
Abstract: 555NM
Text: Photodiode EPD-470-12-0.9 Preliminary Wavelength range Type Technology Case Bluish-green selective GaP SMD 1206 Description Applications Narrow bandwidth and high spectral sensitivity in the bluish-green visible range 380…555 nm , low cost chip based on GaP
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EPD-470-12-0
D-12555
str 380
555NM
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GaP photodiode
Abstract: EPD-525-12-0 high area ir smd photodiode
Text: GaP – Selective Photodiode EPD-525-12-0.5 Wavelength range Type Technology Case Green Diffusion GaP SMD 1206 Applications Description Narrow bandwidth and high spectral sensitivity in Alarm systems, light barriers, special the green-red visible range 450…570 nm , low
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EPD-525-12-0
D-12555
GaP photodiode
high area ir smd photodiode
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EPD-550-1/0.5
Abstract: EPD-550-1
Text: GaP – Visible Range Selective Photodiode Diffusion type Preliminary data EPD-550-1/0.9 Wavelength range Type Technology Case Green-red EPD-550-1/0.9 GaP SMD 1206 Applications Description Narrow bandwidth and high spectral sensitivity in the Alarm systems, light barriers,
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EPD-550-1/0
EPD-550-1/0.5
EPD-550-1
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 10UV12 MADE IN GERMANY 6/99 ALL MEASUREMENTS IN mm Tol.: ±0,10 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActivArea Possible pad 1,5x1 Application
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10UV12
2500C
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Untitled
Abstract: No abstract text available
Text: EPD-470-0-1.4 TECHNICAL DATA Selective Photodiode, TO-18 package GaP EPD-470-0-1.4 is a GaP based photodiode, mounted into a TO-18 housing. This device is featuring a narrow bandwidth and reduced spectral sensitivity at 400 – 500 nm. Specifications • •
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EPD-470-0-1
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EPD-440-0/1.4
Abstract: EPD-440-0 photodiodes for UV range UV photodiodes
Text: GaP – UV-Photodiodes 190 - 570 nm EPD-440-0 Schottky barrier type Description Wide bandwidth and high spectral sensitivity in the UV and visible range (190 nm - 570 nm), low cost chip based on GaP, large active areas are possible Medical engineering (dermatology), output check
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EPD-440-0
EPD-440-
EPD-440
D-12555
EPD-440-0/1.4
EPD-440-0
photodiodes for UV range
UV photodiodes
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm
450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application
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20UV110
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EPD-440-0
Abstract: EPD-440-0/2.5
Text: GaP – UV-Photodiodes 190 - 570 nm EPD-440-0 Schottky barrier type Description Wide bandwidth and high spectral sensitivity in the UV and visible range (190 nm - 570 nm), low cost chip based on GaP, large active areas are possible Medical engineering (dermatology), output check
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EPD-440-0
EPD-440rent
EPD-440-0
EPD-440-0/2.5
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application
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20UV48
2500C
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EPD-150-0
Abstract: No abstract text available
Text: GaP – UV-Photodiodes 150 - 550 nm EPD-150-0 Schottky barrier type Description Wide bandwidth and high spectral sensitivity in the UV and visible ranges (150 nm - 550 nm), low cost, chip based on GaP, large active areas are possible EPD-150-0 0,1 Responsivity, A/W
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EPD-150-0
EPD-150-0
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uv photodiode
Abstract: uv photodiode, GaP UV diode 365 nm EPD-365-0/1.4
Text: UV-Photodiode EPD-365-0/1.4 Wavelength range Type Technology Case UV UG 11 - filter GaP TO 18/46 Description EPD-365-0 Wide bandwidth and high spectral sensitivity in the UV range 245 nm - 400 nm , low cost chip based on GaP 0,1 0,01 Responsivity, A/W Applications
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EPD-365-0/1
EPD-365-0
D-12555
uv photodiode
uv photodiode, GaP
UV diode 365 nm
EPD-365-0/1.4
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TO46 package
Abstract: EPD-365-0-1
Text: UV-Photodiode EPD-365-0-1.4-1 Wavelength range Type Technology Case UV Lense and UG 11 - filter GaP TO 39 Description Wide bandwidth and high spectral sensitivity in the UV range 245 nm - 400 nm , low cost chip based on GaP EPD-365-0 0,1 0,01 Responsivity, A/W
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EPD-365-0-1
EPD-365-0
D-12555
TO46 package
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EPD-365-0/1.4
Abstract: EPD-365-0/2.5 UV photodiodes TO46 str 365
Text: GaP – UV-Photodiodes 245 - 400 nm Schottky barrier type EPD-365-0 Description Wide bandwidth and high spectral sensitivity in the UV and visible range (245 nm - 400 nm), low cost chip based on GaP, large active areas are possible EPD-365-0 0,1 0,01 Medical engineering (dermatology), output check of
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EPD-365-0
D-12555
EPD-365-0/1.4
EPD-365-0/2.5
UV photodiodes
TO46
str 365
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Untitled
Abstract: No abstract text available
Text: GaP – UV-Photodiodes 245 - 400 nm Schottky barrier type EPD-365-0 Description Wide bandwidth and high spectral sensitivity in the UV and visible range (245 nm - 400 nm), low cost chip based on GaP, large active areas are possible EPD-365-0 0,1 0,01 Medical engineering (dermatology), output check of
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EPD-365-0
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G1962
Abstract: uv photodiode, GaP GaP photodiode
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package
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G1961
G1962
G1963
KGPD1007E02
uv photodiode, GaP
GaP photodiode
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Untitled
Abstract: No abstract text available
Text: Photodiode EPD-525-2-0.9 Preliminary Wavelength range Type Technology Case Green selective GaP SMT package Description Applications Narrow bandwidth and high spectral sensitivity in Optical communications, light barriers, the green visible range 450…570 nm
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EPD-525-2-0
D-12555
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gap 1000
Abstract: AT-1300 GAP2000 GAP5000
Text: GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 f H i J/VÍ1 Large Area InGaAs Photodiodes * High Responsivity High Shunt Resistance Low Capacitance: High Speed Planar Design for High Reliability GPD Optoelectronics Corp. GPDOS00001 GAP 500 GAP 1000 GAP 2000 GAP 3000
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GPDOS00001
GAP500
GAP2000
GAP3000
GAP5000
-I-45208.
gap 1000
AT-1300
GAP2000
GAP5000
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Untitled
Abstract: No abstract text available
Text: GAP 500 GAP1000 GAP2000 GAP3000 □ Electrical Characteristics @ 25 °C GAP500 Active Diameter GAP 1000 GAP2000 GAP3000 mm 0.5 1.0 2.0 3.0 Responsivity @ 850nm 0.10 0.20 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)
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GAP1000
GAP2000
GAP3000
GAP500
GAP2000
850nm
1300nm
1550nm
MIL-45208
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MATSUA SU SERIES
Abstract: 251C LN24 LN242RPX
Text: SI Æ m. pp «• Approved Checked Checked if pp m Designed pbp m 1 3 - 1 *§• PRODUCT STANDARDS LN242RPX »'I/T Y P E K (G aP /R ed Light Emitting Diode(GaP) /H ÌÉ / APPLICATION m /ST R U C T U R E TT' ^ /In d icato rs m & GaP ^ /O U T L IN E [El/Attached
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LN242RPX
14/Optical
P13-5
MIL-STD-19500HLTPD:
MIL-S-19500H
P13-6
P13-7â
P13-13
MATSUA SU SERIES
251C
LN24
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panasonic date code e l
Abstract: MATSUA VCO
Text: ID« % Approved « i fp Checked « pp Checked ÌB U /T Y P E & $1 jjt/S T R U C T U R E GaP ^ /O U T L IN E Ptf Condition STANDARDS K G aP /R ed Light Em itting Diode(GaP) 7F #3 / Indicators Ü 3 /Attached ^ 1 I fp IFDC Vr 70 150 25 4 mW mA mA V Topr -25 ~
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LN25
Abstract: LN252RPX
Text: m jë Approved Checked tfe ft f t tfc Checked Designed D v iv ÎSU/TYPE m ^/A PPL IC A T IO N ÍÜ /STRU CTU RE ^ /O U T L IN E jfê M M ± 5È ABSOLUTE MAXIMUM RATINGS lêkfir /C ondition & GaP m m & m 1 3 - 1 PRODUCT STANDARDS LN252RPX K (G aP /Red Light Em itting Diode(GaP)
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