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    GAAS FET RF SWITCH CROSS REFERENCE Search Results

    GAAS FET RF SWITCH CROSS REFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd

    GAAS FET RF SWITCH CROSS REFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets

    Abstract: No abstract text available
    Text: Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets Mike Sun and Pete Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end


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    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    Choosing the Right RF Switches for Smart Mobile Device Applications

    Abstract: No abstract text available
    Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than


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    IC 4047

    Abstract: GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet
    Text: PRODUCT FEATURE RF DIGITAL ATTENUATORS IN PLASTIC MLP PACKAGES B Fig. 1 Relative sizes of the five-bit and six-bit attenuators. ▼ roadband digital attenuators have been used to set power levels in RF and microwave circuits for many years. The concept is to electronically switch resistive T


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    PDF AT90XXXX) AT90XXXX-TB) AT90-0001 IC 4047 GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet

    4558D

    Abstract: 4556 op-amp IC 4558 surround sound circuit REGULATOR IC l7812cv TDA2822M SMD TYPE circuit inter CV 203 NE555N IC AUDIO FILTER NJM2060 "cross reference" IC L7912CV MC34063P1
    Text: NJR CORPORATION Product Reference Overview SEMICONDUCTORS LINEAR RF & WIRELESS PACKAGING 27 PART NUMBER SYSTEMS 33 CROSS REFERENCE 35 AUDIO ICs 8 COMMUNICATION ICs 9 VIDEO ICs 10 CMOS SWITCH 11 MCU & PERIPHERAL 13 LCD DRIVER 15 LSI/OTHER 16 SPECIAL FUNCTIONS


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    PDF O-220F O-220 O-252 4558D 4556 op-amp IC 4558 surround sound circuit REGULATOR IC l7812cv TDA2822M SMD TYPE circuit inter CV 203 NE555N IC AUDIO FILTER NJM2060 "cross reference" IC L7912CV MC34063P1

    switches

    Abstract: anzac mixers GAAS FET CROSS REFERENCE GAAS FET rf switch CROSS REFERENCE PIN DIODE DRIVER CIRCUITS PIN DIODE SPDT DRIVER CIRCUITS semiconductors cross reference TWD5032 Microwave PIN diode ANZAC CROSS REFERENCE
    Text: RF & Microwave Switches Exceeding Expectations Spectrum Microwave, a leader in RF Component design, continues this rich microwave heritage with its line-up of broadband, high isolation switches. We believe that designing switches which exceed customer expectations


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    body contact FET soi RF switch

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
    Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises


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    Am55-0015

    Abstract: GAAS FET rf switch CROSS REFERENCE 1N4148
    Text: Am55-0015 250 mW Power Amplifier with T/R Switch 2.4 - 2.5 GHz Features • • • • • QSOP-28 Highly Integrated Power Amplifier with T/R Switch Operates with 2.7 V to 6 V Supply Voltage High Linear Output Power P1dB: +24 dBm Typical Individual Gate Control for Each Amplifier Stage


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    PDF Am55-0015 QSOP-28 QSOP-28 46F-4658, GAAS FET rf switch CROSS REFERENCE 1N4148

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    Untitled

    Abstract: No abstract text available
    Text: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)


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    PDF 1GG6-4080 5991-1251EN

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    VMMK-2303

    Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
    Text: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and


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    PDF 800MHz AV02-2103EN VMMK-2303 VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03

    RF3159

    Abstract: EGSM900 RF3159PCBA-41X EGSM900DCS
    Text: RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 18 HB RFOUT BAND SEL 2 Features „ „ „ „ „ „ „ „ High Gain for use in Systems with Low RF Driver Power


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    PDF RF3159 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/ GSM850, EGSM900 2002/95/EC 2005/747/EC. DS070102 RF3159 RF3159PCBA-41X EGSM900DCS

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE Package Style: Module 6mmx6mm HB RFIN 1 Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ BAND SEL 2 Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup


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    PDF RF3158 GSM/EDGE/GSM850/EGSM900 2002/95/EC 2005/747/EC. DS100217

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    PDF RF3158 GSM/EDGE/GSM850/DCS/PCS GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS061212

    RF3158PCBA-41X

    Abstract: 300khz filter EGSM900 RF3158 PCB Rogers RO4003 schematic diagram 555 PAM linear amplifier P1dB 36dBm "AGC Amplifier"
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE Package Style: Module 6mmx6mm HB RFIN 1 Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup


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    PDF RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS100217 RF3158PCBA-41X 300khz filter EGSM900 RF3158 PCB Rogers RO4003 schematic diagram 555 PAM linear amplifier P1dB 36dBm "AGC Amplifier"

    15S24

    Abstract: RF3158 EGSM900 RF3158PCBA-41X PCB Rogers RO4003 linear amplifier P1dB 36dBm
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 „ „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    PDF RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/ 2002/95/EC 2005/747/EC. DS070615 15S24 RF3158 EGSM900 RF3158PCBA-41X PCB Rogers RO4003 linear amplifier P1dB 36dBm

    RF3158PCBA-41X

    Abstract: rf3158
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    PDF RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS071220 RF3158PCBA-41X rf3158

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


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    PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


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    PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer