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274 transistor Abstract: transistor c 5855 Text: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and	OCR Scan	PDF	OT440A PTB23006U Erie1250-003 GA244 274 transistor transistor c 5855

Catalog Datasheet

MFG & Type

PDF

Document Tags

274 transistor

Abstract: transistor c 5855
Text: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and

OCR Scan

PDF

OT440A PTB23006U Erie1250-003 GA244 274 transistor transistor c 5855