G3N60B3
Abstract: HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 2001 7a
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
150oC.
HGTP3N60B3
G3N60B3
HGTD3N60B3S
HGTD3N60B3S9A
RHRD460
2001 7a
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G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334 7a600v
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
G3N60B3D
mosfet 4414
HGT1S3N60B3DS9A
RHRD460
TB334
7a600v
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HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
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HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
150oC.
HGTD3N60B3S
HGTD3N60B3S9A
HGTP3N60B3
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G3N60B3
Abstract: G3N60B HGT1S3N60B3 HGT1S3N60B3S HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 Semiconductor 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
G3N60B
HGT1S3N60B3
HGTD3N60B3
HGTD3N60B3S
HGTD3N60B3S9A
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HGT1S3N60B3DS
Abstract: HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
HGT1S3N60B3DS9A
RHRD460
TB334
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G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
G3N60B3D
mosfet 4414
HGT1S3N60B3DS9A
RHRD460
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTD3N60B3S
HGTD3N60B3S9A
HGTP3N60B3
RHRD460
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G3N60B3
Abstract: G3N60B HGTD3N60B3 TO-262AA equivalent
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
G3N60B
HGTD3N60B3
TO-262AA equivalent
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G3N60B
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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OCR Scan
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
GTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
115ns
1-800-4-HARRIS
G3N60B
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G3N60B3
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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OCR Scan
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
1-800-4-HARRIS
G3N60B3
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G3N60B3
Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
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OCR Scan
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HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
Transistor No C110
transistor C110
tr c110
HGTD3N60B3S
HGTD3N60B3S9A
LD26
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