600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]
|
Original
|
PDF
|
B192-H6780-G11-X-7600
SP000008186
VDSL6100i-E
600V igbt dc to dc buck converter
TRANSISTOR SMD CODE PACKAGE SOT89
bts 2140 1b data sheet
TRANSISTOR SMD CODE PACKAGE SOT23
PSB 6970 HL V1.3
PEF 24628 E V1.2-G
infineon psb 6970
PEF 4265 T V2.1
HT 1200-4
SLB 9635
|
BAT54RLT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes BAT54RLT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent
|
Original
|
PDF
|
BAT54RLT1
236AB)
BAT54RLT1
|
CA3102
Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
|
Original
|
PDF
|
CA3102
500MHz
CA3102
500MHz.
FN611
200MHz
CA3102E
CA3102M
MS-012-AB
diode b22
L 321 t
|
CA3102
Abstract: CA3102E CA3102M MS-012-AB
Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
|
Original
|
PDF
|
CA3102
500MHz
CA3102
500MHz.
200MHz
CA3102E
CA3102M
MS-012-AB
|
z144
Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
|
Original
|
PDF
|
CA3127
CA3127
500MHz.
z144
1021-P1
cascode transistor array
HP342A
CA3127E
CA3127M
CA3127M96
zener Diode B22
|
AN5337 ca3028
Abstract: AN5337 IC CA 3028A ca3028 CA3028A CA3028AM96 diode L2.8 cascode 120M CA30
Text: Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or email CA3028A January 1999 File Number 382.5 Differential/Cascode Amplifier for Commercial and Industrial Equipment
|
Original
|
PDF
|
CA3028A
120MHz
CA3028A
120MHz.
DifCA3028A
ferenCA3028AE
AN5337 ca3028
AN5337
IC CA 3028A
ca3028
CA3028AM96
diode L2.8
cascode
120M
CA30
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet ZC12 – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series, ZC12 SDW02F1C, SDW82F1C, SDW92F1C LM-80 RoHS MacAdam 3-Step Product Brief Description Features and Benefits • The ZC series are LED arrays which provide
|
Original
|
PDF
|
SDW02F1C,
SDW82F1C,
SDW92F1C
LM-80
|
AN5337 ca3028
Abstract: CA3028 CA3053 CA3028A CA3053E CA3053 Metal Can AN5337 CA3028AE CA3028BE ca3053s
Text: CA3028A, CA3028B, CA3053 S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only
|
Original
|
PDF
|
CA3028A,
CA3028B,
CA3053
120MHz
CA3028
CA3028A
CA3028B
120MHz.
AN5337 ca3028
CA3053
CA3053E
CA3053 Metal Can
AN5337
CA3028AE
CA3028BE
ca3053s
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet ZC40 – Z-Power COB Superior high Flux for High Current System Z Power Chip on board – ZC series, ZC40 SDW05F1C, SDW85F1C 28 x 28 ㎟ RoHS Product Brief Description Features and Benefits • • The ZC(Z-Power Chip on board) series are
|
Original
|
PDF
|
SDW05F1C,
SDW85F1C
|
CA3127
Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN
|
Original
|
PDF
|
CA3227
A3127
CA3127,
CA3227
FN1345
CA3127
CA3227M
CA3227M96
TB379
610E
800E
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet ZC12 – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series, ZC12 SDW02F1C, SDW82F1C LM-80 RoHS MacAdam 3-Step Product Brief Description Features and Benefits • The ZC series are LED arrays which provide
|
Original
|
PDF
|
SDW02F1C,
SDW82F1C
LM-80
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet ZC40 – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series, ZC40 SDW05F1C, SDW85F1C MacAdam 3-Step RoHS Product Brief Description Features and Benefits • The ZC series are LED arrays which provide
|
Original
|
PDF
|
SDW05F1C,
SDW85F1C
|
YSI 44201
Abstract: YSI 44007 YSI 400 LT1338A sec c 2335 LT1034 CA 1004 2.5 LT1004CZ-2.5 LT1004 LT1004-2
Text: LT1004 Micropower Voltage Reference U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ Guaranteed ±4mV Initial Accuracy LT1004-1.2 Guaranteed ±20mV Accuracy LT1004-2.5 Guaranteed 10µA Operating Current Guaranteed Temperature Performance Operates up to 20mA
|
Original
|
PDF
|
LT1004
LT1004-1
LT1004-2
LM334
LT1634
10ppm/
LT1460S3-2
OT-23
20ppm/
YSI 44201
YSI 44007
YSI 400
LT1338A
sec c 2335
LT1034
CA 1004 2.5
LT1004CZ-2.5
LT1004
|
610E
Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
Text: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making
|
Original
|
PDF
|
CA3227
CA3227
610E
800E
CA3227E
CA3227M
CA3227M96
|
|
|
SKM500GA123DS
Abstract: No abstract text available
Text: SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .< . SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Features
|
Original
|
PDF
|
500GA123D
500GA123D
500GA123DS
SKM500GA123DS
|
QUICKLOGIC SDIO Host
Abstract: nand flash sdio quicklogic
Text: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see
|
Original
|
PDF
|
|
jedec package TFBGA 12
Abstract: 100 pin vqfp drawing LBGA thermal 8mm pitch BGA 256 pin 14x14 QUICKLOGIC SDIO Host
Text: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see
|
Original
|
PDF
|
|
YSI 44201
Abstract: No abstract text available
Text: LT1004 Micropower Voltage Reference U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed ±4mV Initial Accuracy LT1004-1.2 Guaranteed ±20mV Accuracy LT1004-2.5 Guaranteed 10µA Operating Current Guaranteed Temperature Performance Operates up to 20mA Very Low Dynamic Impedance
|
Original
|
PDF
|
LT1004
LT1004-1
LT1004-2
LM334
LT1634
10ppm/Â
LT1460S3-2
OT-23
20ppm/Â
YSI 44201
|
040820
Abstract: SKM500GA123DS
Text: SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .< . SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Features
|
Original
|
PDF
|
500GA123D
500GA123D
500GA123DS
040820
SKM500GA123DS
|
diodes C441
Abstract: scr welding C380 General electric SCR Calcium Carbonate SCR 100A A430 A570 C350 C390
Text: HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs G6/G14/G15 G9/G10/3N221/3N222 CELL DATA 180° C O N D U C T IO N , L IQ U ID C O O L E D A T 40°C 1 G PM C E L L NO. M AX. V O L T S P ER C E L L S IN G L E SU R G E AM PS A 390 A 430 A 540 A 570
|
OCR Scan
|
PDF
|
G6/G14/G15
G9/G10/3N221/3N222
G6/G14/G15
G9/G10/3N221
/3M222
-400Hz
diodes C441
scr welding
C380
General electric SCR
Calcium Carbonate
SCR 100A
A430
A570
C350
C390
|
Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP 5ÛE ] • 2041107 Q D G G m S 377 H D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310)767-7958 Data Sheet No.: GPDP-301-A —¡—v^ _ \ 3 AMP GENERAL PURPOSE SILICON DIODES FEATURES:
|
OCR Scan
|
PDF
|
GPDP-301-A
DO-27,
60Hlz
|
Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes 16X 16 matrix displays LM-2256 Series T h e L M -2 2 5 6 s e rie s a re 16 X 16 m a •E x te r n a l dim ensions Unit: mm trix d is p la y s w h ic h c a n b e u s e d in a w ide variety of applications, including a lp h a b e t,
|
OCR Scan
|
PDF
|
LM-2256
00Ib474
|
Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes 1 6 X 16 matrix displays LM-1256 Series T h e L M -1 2 5 6 s e rie s a re 16 X 16 m a • E x t e r n a l d im e n s io n s U nit: m m tr ix d is p la y s w h ic h c a n b e u s e d in a w id e v a rie ty o f a p p lic a tio n s , in c lu d in g
|
OCR Scan
|
PDF
|
LM-1256
|
Untitled
Abstract: No abstract text available
Text: SONY CXA2521AQ RF Amplifier for CD Player and CD-ROM Description The CXA2521AQ is an IC for RF signal processing of CD player and CD-ROM. Features • Supports quadruple speed. RF signal fc^SM H z • Peak hold circuit time constant of mirror circuit can
|
OCR Scan
|
PDF
|
CXA2521AQ
D012L13
CXA2S21AQ
32PIN
QFP-MP-L01
QFP032-P-0707-A
42ALLOY
Q012bl4
|
