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    JE3055

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD3055 JE3055 500mA 300/tS, MJD30S5 G00TD32 T-33-Ã JE3055