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    G-120 C MOSFET Search Results

    G-120 C MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    G-120 C MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "MOSFET Module"

    Abstract: QJS0512001 N mosfet 400v 500A 500a mosfet MOSFET 20V 120A STY60NM50
    Text: QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 3 2 G H 5 1 M (2 TYP.) 4 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module


    Original     		PDF QJS0512001 Amperes/500 03TAB "MOSFET Module" QJS0512001 N mosfet 400v 500A 500a mosfet MOSFET 20V 120A STY60NM50

    Untitled

    Abstract: No abstract text available
    Text: QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 4 1 M (2 TYP.) 3 2 G H 5 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module


    Original     		PDF QJS0512001 Amperes/500 03TAB

    sot 227b diode fast

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT with Diode VCES = 300 V IC25 = 120 A VCE sat = 2.4 V IXGN 80N30BD1 C G E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 A VGES Continuous ±20 V VGEM Transient


    Original     		PDF 80N30BD1 OT-227B, sot 227b diode fast

    VJ7079

    Abstract: VJ7119
    Text: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . CAPACITORS Model RuGGed Chip VJ Series RuGGed Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100 V rated RuGGed Chip is typicaly less than a quarter


    Original     		PDF 100kHz 22-Oct-02 VJ7079 VJ7668 VJ7921 VJ7121 VJ7948 VJ7119 VJ7133 VMN-PT9060-0210

    Project Report of fire alarm using IC 555 doc

    Abstract: Project Report of fire alarm using IC 555 toshiba laptop battery pack pinout hp laptop battery pack pinout Project Report for fire alarm using IC 555 doc Project Report of fire alarm using IC timer ne 555 TMS320C5409 automatic heat detector project report smoke alarm using IC NE 555 hp laptop battery pinout
    Text: T H E W O R L D L E A D E R I N D S P inside A N A L O G A N D FEBRUARY 2001 VOLUME 7 TM point DSPs E R 160 MHz CONSUM P 50% ON DSP DSPTMS320C5410A MHz TI Analog Applications Journal 60% 120 POW Nov. update Improved fixed- N E Back cover R RMA FO C Strategic


    Original     		PDF TMS320C5410A TMS320C5409A TMS320C5000 w/244 Project Report of fire alarm using IC 555 doc Project Report of fire alarm using IC 555 toshiba laptop battery pack pinout hp laptop battery pack pinout Project Report for fire alarm using IC 555 doc Project Report of fire alarm using IC timer ne 555 TMS320C5409 automatic heat detector project report smoke alarm using IC NE 555 hp laptop battery pinout

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		PDF BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM High Speed IXGK 210N30PCT1 IGBT + PolarTM MOSFET VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C in Parallel For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous


    Original     		PDF 210N30PCT1 O-264 IXGK210N30PCT1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous


    Original     		PDF 210N30PBT1 O-264 IXGK210N30PBT1

    015N04L

    Abstract: IPB015N04L IPB015N04L G JESD22
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 015N04L 015N04L IPB015N04L G JESD22

    IEC61249-2-21

    Abstract: IPB015N04L JESD22 V8002
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 IEC61249-2-21 015N04L IEC61249-2-21 JESD22 V8002

    Untitled

    Abstract: No abstract text available
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 015N04L

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y ^ ^ ARF449A 150V 150W RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.


    OCR Scan     		PDF ARF449A 120MHz ARF449A ARF449B ARF449Aes) ARF446 ARF447 F-33700

    DS16A

    Abstract: No abstract text available
    Text: Æ lltro n PRODUCT D EV I C ES , I NC . 200V. ABSOLUTE MAXIMUM RATINGS PARAMETER U N IT S SYMBOL DRAIN-SOURCE VOLTAGE VDSS 200 Vdc DRAIN-GATE VOLTAGE R g g - 1 . OMn VDGR 200 Vdc VGS ±20 Vdc ID 120 Ade DRAIN CURRENT PULSED 1DM 480 A TOTAL POWER D IS S IP A TIO N


    OCR Scan     		PDF SDF120NA20 DS16A

    34984

    Abstract: Si9105
    Text: T em ic SÌ9105 Siliconix 1-W High-Voltage Switchmode Regulator Features • C C IT T C o m p a tib le • C u rren t-M o d e C o n tro l • L ow P ow er C o n su m p tio n less th a n 5 raW • • • • • 10- t o 120-V In p u t R an g e 200-V, 2 5 0 -m A M G S F E T


    OCR Scan     		PDF 10-to 250-mAMOSFET Si9105 9105DJ 1N5819 1N4148 P-34984â 25M735 34984

    Untitled

    Abstract: No abstract text available
    Text: ^ ADVANCED PO W ER Te c h n o l o g y # RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 150V ARF449A * ARF449B Common Source 150W 120MHz The ARF449A and ARF449B comprise asym m etric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.


    OCR Scan     		PDF ARF449A ARF449B 120MHz ARF449A ARF449B F449A/449 F-33700

    Si9979

    Abstract: brake mosfet switch BLDC Motor intemallow SI9979CS SQFP-48
    Text: T e m ic SÌ9979CS_ « x 3-Phase Brushless DC Motor Controller Features • H all-E ffect C o m m u ta tio n • 6 0 ° o r 120° S en so r Spacing • In te g ral H igh-S ide D riv e f o r all N -C h an n el M O S F E T B ridges


    OCR Scan     		PDF 9979cs_ Si9979CS Si9979 P-34651â 25473S 9979cs p-34651 03/25y94) brake mosfet switch BLDC Motor intemallow SQFP-48

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33362/D MOTOROLA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly d e sig ned to o p era te from a rectified 120 VAC line source. This in te gra te d circu it fea tu res an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,


    OCR Scan     		PDF MC33362/D

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33362/D M O TO R O LA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly desig ned to o p era te from a rectified 120 VAC line source. This integrated circu it fe a tu re s an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,


    OCR Scan     		PDF MC33362/D

    n22K

    Abstract: t3.15a 250v L5991A 07l v3 L5991 BCD60II
    Text: L5991 L5991A PRIMARY CONTROLLER WITH STANDBY • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ . . C U R R E N T -M O D E C O N TR O L PW M SW ITC H IN G F R E Q U E N C Y UP TO 1 M Hz LOW STA R T-U P C U R R E N T < 120|xA H IG H -C U R R EN T O U TP U T D R IVE SUITABLE


    OCR Scan     		PDF L5991 L5991A 100ns DIP16ANDS016 BCD60II MULTIPOW23 006inch) n22K t3.15a 250v L5991A 07l v3

    irfd121

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS


    OCR Scan     		PDF IRFD121 IRFD122 IRFD123

    t1002

    Abstract: Pulse T1002 PWR-SMP120BNC si908 Scans-002257
    Text: PWR-SMP120 PWM Power Supply IC 120 VAC Input Isolated, Regulated DC Output | POWER INTEGRATIONS, INC. Product Highlights Integrated Power Switch and CMOS Controller • O u tp u t p o w e r u p to 2 0 W fro m re c tifie d 12 0 V A C in p u t • In te g ra te d so lu tio n m in im ize s o v e ra ll size


    OCR Scan     		PDF PWR-SMP120 t1002 Pulse T1002 PWR-SMP120BNC si908 Scans-002257

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions Values v Vos V dgr Id V V A A A V W °C V 200 200 120 87 360 ±20 500 55 . .+150 2 500 C la ss F 55/150/56 R g s = 20 k£i Tease —25 °C Tcase - 85 °C Id m V gs Pd Tj, Tstg Visol humidity climate Units


    OCR Scan     		PDF M120B25:

    2N15

    Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
    Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode


    OCR Scan     		PDF d7z39 RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFL1N15 RFP2N12 2N15 RFP2N15 RFP-zn rfp1n12

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15