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Leeson Z112A (ALTERNATE: 182TCFW9061) AC Motor, 2, 1800, TEFC, 182TZ, 1, 60, 115, 230 \| Leeson Z112A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	Z112A (ALTERNATE: 182TCFW9061)	Bulk		11 Weeks	1	1 $801.28 10 $801.28 100 $801.28 1000 $801.28 10000 $801.28	Get Quote

FW906 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FW906-TL-E		On Semiconductor	FW906 - Power MOSFET 30 V, 8.0 A, 24 mOhm Complementary		Original	PDF

FW906 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
W906 Abstract: FW906 Text: FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET	Original	PDF	FW906 ENA1809 PW100ms) PW10s) A1809-6/6 W906 FW906
W906 Abstract: A1809 mos n-ch IT15834 Text: FW906 注文コード No. N A 1 8 0 9 三洋半導体データシート N FW906 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・オン抵抗 Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)	Original	PDF	FW906 100ms 2000mm2 005A-003 SC-87, 2000mm2 IT15840 A1809-5/6 W906 A1809 mos n-ch IT15834
Untitled Abstract: No abstract text available Text: FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET	Original	PDF	FW906 ENA1809 100ms) A1809-6/6
fw912 Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912 fw911 FY912 fw905
fw912 Abstract: MT28F642D18 MT28F642D20 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912
FW912 Abstract: No abstract text available Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 FW912
fw912 Abstract: fw911 FX912 FY912 FY-912 FX911 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 80blocks fw912 fw911 FX912 FY912 FY-912 FX911