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    FUJITSU SEMICONDUCTOR PHEMT Search Results

    FUJITSU SEMICONDUCTOR PHEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU SEMICONDUCTOR PHEMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMM5805X

    Abstract: No abstract text available
    Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC


    Original     		PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200

    584 MMIC

    Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
    Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5803X 30dBm FMM5803X FCSI0200M200 584 MMIC fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: FMM5805
    Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC


    Original     		PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 fujitsu power amplifier GHz FMM5805

    Untitled

    Abstract: No abstract text available
    Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC


    Original     		PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200

    0 281 002 924

    Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic

    DC TO 20GHZ RF AMPLIFIER MMIC

    Abstract: fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ
    Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC


    Original     		PDF FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200 DC TO 20GHZ RF AMPLIFIER MMIC fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ

    fujitsu power amplifier GHz

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz

    Untitled

    Abstract: No abstract text available
    Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC


    Original     		PDF FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200

    fujitsu power amplifier GHz

    Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz FUJITSU SEMICONDUCTOR phemt

    FUJITSU SEMICONDUCTOR phemt

    Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC


    Original     		PDF FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200

    fujitsu power amplifier GHz

    Abstract: power amplifier mmic
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5802X FMM5802X FCSI0599M200 fujitsu power amplifier GHz power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: UM 2200 power amplifier mmic
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz UM 2200 power amplifier mmic

    FUJITSU SEMICONDUCTOR phemt

    Abstract: mmic case styles power amplifier mmic
    Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,


    Original     		PDF FMM5815GJ-1 31dBm FMM5815GJ the17 FCSI0402M200 FUJITSU SEMICONDUCTOR phemt mmic case styles power amplifier mmic

    FMM5811GJ-1

    Abstract: FMM5811 power amplifier mmic
    Text: FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 24.5dBm Typ. High Gain: G1dB = 15dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 17.7-23.6GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5811GJ-1 FMM5811GJ-1 FCSI0101M200 FMM5811 power amplifier mmic

    FMM5804X

    Abstract: fujitsu power amplifier GHz
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology


    Original     		PDF FMM5804X FMM5804X FCSI0599M200 fujitsu power amplifier GHz

    Ericsson 600 rt dish

    Abstract: telephone drop-wire Ericsson microwave dish qualcomm 801 c-band microwave transmitter philips pe 2480 Ericsson microwave commissioning SIEMENS MICROWAVE RADIO mesfet lnb Nokia SAT 820 S
    Text: t r o p e R A n n u a l 1 9 9 7 RF MICROWAVE SOLUTIONS FOR THE WORLD OF DIGITAL COMMUNICATIONS C O R P O R A T E P R O F I L E Founded in 1985, ANADIGICS, Inc. is wireless, fiber optic and video com- a pioneer and a leading supplier munications components and sys-


    Original     		PDF

    SIEMENS MICROWAVE RADIO

    Abstract: mesfet lnb raytheon downconverter Ericsson microwave commissioning ESP car stability LED light chase raytheon dbs Nortel Networks Power Amplifier MMIC 2.6 GHz 10 gb laser diode
    Text: RFIC Solutions for Broadband and Wireless Communications 010101010101101\\


    Original     		PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


    Original     		PDF com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


    Original     		PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    cq 949

    Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz


    OCR Scan     		PDF FMM5802X FMM5802X FCSI0599M200 cq 949 fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053

    Untitled

    Abstract: No abstract text available
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1


    OCR Scan     		PDF FMM5804X FCSI0599M200