FUJITSU MICROWAVE TRANSISTOR
Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band
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IMT-2000
FLL800IQ-2C
Descriptio10
220mA
FUJITSU MICROWAVE TRANSISTOR
Fujitsu GaAs FET application note
4433B
push pull class AB RF linear 1.3 GHz
FLL600IQ-3
understanding thermal basics for microwave power
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FUJITSU MICROWAVE TRANSISTOR
Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band
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FLL600IQ-3
60-Wpush-pull
117mA
FUJITSU MICROWAVE TRANSISTOR
understanding thermal basics for microwave power
Fujitsu GaAs FET application note
4433B
high power fet amplifier schematic
mmds passband filter
fll600iq
ATC 100A 4pF
push pull class AB RF linear 1.3 GHz
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FMM5057VF
Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage
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FMM5057VF
FMM5057VF
FCSI0202M200
7.1 power amplifier circuit diagram
fujitsu power amplifier GHz
Fujitsu Quantum Devices
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fujitsu power amplifier GHz
Abstract: power amplifier mmic
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5802X
FMM5802X
FCSI0599M200
fujitsu power amplifier GHz
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
FCSI0501M200
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150759
Abstract: 110GHZ
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
FCSI0501M200
150759
110GHZ
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584 MMIC
Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5803X
30dBm
FMM5803X
FCSI0200M200
584 MMIC
fujitsu power amplifier GHz
fujitsu x band amplifiers
power amplifier mmic
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cofdm transmitter
Abstract: MB87J217A tuner tv if 36MHz tuner if 36MHz automatic gain controller TV demodulator dvbt cofdm transmitter "channel estimation"
Text: Product Profile February 2001 Edition 2.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS
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MB87J217A
MB87J217A
cofdm transmitter
tuner tv if 36MHz
tuner if 36MHz
automatic gain controller TV demodulator
dvbt cofdm transmitter
"channel estimation"
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s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
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covPG00-00071e
PG00-00071-2E
s29gl032n90
MB15H121
S29GL064N90
s29gl256p90
S29GL01GP13
S29GL128P90
MB86A20
S29AL008J55
S29AL016J55
s29gl128p11
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S29JL032H70
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book
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PG00-00091-3E
ACD-10131
CD-10131
DS04-27211-5E
MB3789
S29JL032H70
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Fujitsu GaAs FET Amplifier
Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that
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FLL2400IU-2C
FLL2400IU-2C
FCSI1100M200
Fujitsu GaAs FET Amplifier
Fujitsu GaAs FET Amplifier design
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converter dc-dc 24v to 12v tl494
Abstract: MB39A134/MB39A132A MB39A136
Text: FUJITSU SEMICONDUCTOR LIMITED Power Management ICs Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America
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LQFP48
TSSOP28
TSSOP24
QFN32
WL-CSP49
SON10
WL-CSP20
converter dc-dc 24v to 12v tl494
MB39A134/MB39A132A
MB39A136
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TL494 car charger schematic diagram
Abstract: tl494 buck dc/dc converter Buck converter with tl494 mb39a118 car power inverter TL494 MB39A129 converter dc-dc 24v to 12v tl494 schematic diagram inverter lcd monitor fujitsu MB39A132 mb39a116
Text: Power Management ICs FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact:
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fmm5049
Abstract: FMM5049VT mmic case styles 28492
Text: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC
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FMM5049VT
FMM5049VT
FCSI0901M200
fmm5049
mmic case styles
28492
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Fmm5046vf
Abstract: 0503 10MHZ J250100
Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the
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36dBm
FMM5046VF
FCSI0200M200
0503 10MHZ
J250100
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Untitled
Abstract: No abstract text available
Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the
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36dBm
FMM5046VF
FCSI0200M200
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FLL810IQ-4C
Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
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FLL810IQ-4C
FLL810IQ-4C
FCSI05019M200
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FLL810IQ-3C
Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
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FLL810IQ-3C
FCSI05019M200
Fujitsu GaAs FET Amplifier design
Fujitsu GaAs FET Amplifier
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DCS Automation PDF Notes
Abstract: auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P MB15G000 SSOP-16 SSOP-20
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-1E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology
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DS06-70105-1E
MB15G000
DCS Automation PDF Notes
auTOMATION DCS pdf Notes
KU SG 2.45 30 A
RX-3
BCC-16
FPT-16P-M05
LQFP-48P
SSOP-16
SSOP-20
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology
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DS06-70105-3E
MB15G000
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MB39C326
Abstract: WLP 1500
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00001-1v0-E ASSP for Power Supply Applications 6MHz Synchronous Rectification Buck-Boost DC/DC Converter IC MB39C326 DESCRIPTION The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for
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DS405-00001-1v0-E
MB39C326
MB39C326
1200mA
WLP 1500
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70103-1E Semicustom ASTRO MASTER III BIPOLAR Semi-Custom LSI for High Frequency Analog Circuits MB54600 Series • DESCRIPTION ASTRO MASTER III is a semicustom LSI that uses master-slice technology and is suitable for high frequency
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DS06-70103-1E
MB54600
MB546xx
20-pin,
FPT-20P-M03)
34-pin,
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cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz
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FMM5802X
FMM5802X
FCSI0599M200
cq 949
fujitsu power amplifier GHz
fujitsu phemt
FUJITSU RF 053
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MB8264
Abstract: FPT-80P-M01
Text: April 1991 Edition 1.0 FUJITSU D A TA SH EET MB87045 VIDEO DRAM CONTROLLER The video controller MB87045 controls general purpose DRAM to store one composite video signal field. The serial-parallel converter circuit in the controller processes the digitized video signal sampling frequency: 3 fsc = 10.7 MHz from a
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MB87045
MB40576
MB81464,
MB40776
KV0019-914A1
MB8264
FPT-80P-M01
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