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    FS S12 2 Search Results

    FS S12 2 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    64991-S12-3RLF Amphenol Communications Solutions 64991-S12-3RLF-GUIDE PIN 100 SHRD HDR Visit Amphenol Communications Solutions
    SF Impression Pixel

    FS S12 2 Price and Stock

    Siemens CFSS12200H

    SWITCH CFS 12 X 200 MM SHAFT
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    DigiKey CFSS12200H Box 1
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    Samtec Inc SFSS-12-28-G-04.00-S

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    Master Electronics SFSS-12-28-G-04.00-S
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    Sager SFSS-12-28-G-04.00-S 1
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    Samtec Inc SFSS-12-28-G-04.00-SR

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    Master Electronics SFSS-12-28-G-04.00-SR
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    Sager SFSS-12-28-G-04.00-SR 1
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    Samtec Inc SFSS-12-28-G-12.00-SR

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    DigiKey SFSS-12-28-G-12.00-SR Bulk 1
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    Samtec Inc SFSS-12-28-G-08.00-D-NDS

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    DigiKey SFSS-12-28-G-08.00-D-NDS Bulk 1
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    FS S12 2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE8500100

    Abstract: NE8500199 UM 3842 7486 gate
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)


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    PDF NE8500100 NE8500199 24-Hour NE8500100 NE8500199 UM 3842 7486 gate

    NE6500496

    Abstract: 173300 NEC Microwave Semiconductors
    Text: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%


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    PDF NE6500496 NE6500496 24-Hour 173300 NEC Microwave Semiconductors

    49570

    Abstract: MC-7856 MC7856G MC-7856G
    Text: CATV 22 dB PUSH-PULL AMPLIFIER MC-7856G OUTLINE DIMENSIONS Units in mm FEATURES • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (5.7 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C,


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    PDF MC-7856G MC-7856 24-Hour 49570 MC7856G MC-7856G

    MC7866G

    Abstract: MC-7866G
    Text: CATV 22 dB POWER DOUBLER AMPLIFIER MC-7866G FEATURES OUTLINE DIMENSIONS Units in mm • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (5.6 dB TYP at 860 MHz) • LOW DC CURRENT DRAW (355 mA TYP at 24 V) • HIGH RELIABILITY


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    PDF MC-7866G MC-7866G 24-Hour MC7866G

    MC-7862 NEC

    Abstract: MC7862G MC-7862 MC-7862G 74760
    Text: CATV 18 dB POWER DOUBLER AMPLIFIER MC-7862G OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE • GALLIUM ARSENIDE ACTIVE DEVICES • LOW DISTORTION • LOW NOISE FIGURE (6.3 dB TYP at 860 MHz) • LOW DC CURRENT DRAW (355 mA TYP at 24 V) • HIGH RELIABILITY


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    PDF MC-7862G MC-7862 24-Hour MC-7862 NEC MC7862G MC-7862G 74760

    transistor MAR 826 data sheet

    Abstract: SA611 amplifier gain 36 dB frequency 1GHz amplifier mixer circuit SA611DK
    Text: INTEGRATED CIRCUITS SA611 1GHz low voltage LNA and mixer Product specification Supersedes data of 1997 Nov 07 IC17 Data Handbook Philips Semiconductors 1999 Mar 26 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA611 DESCRIPTION


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    PDF SA611 SA611 800-1000MHz. 881MHz transistor MAR 826 data sheet amplifier gain 36 dB frequency 1GHz amplifier mixer circuit SA611DK

    drive 5v 30191

    Abstract: SA601 SA601DK 346-64 SR00065 30191
    Text: INTEGRATED CIRCUITS SA601 Low voltage LNA and mixer – 1 GHz Product data Supersedes data of 1994 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA and mixer SA601 DESCRIPTION PIN CONFIGURATION The SA601 is a combined RF amplifier and mixer designed for


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    PDF SA601 SA601 800-1200MHz. 900MHz 900MHz. drive 5v 30191 SA601DK 346-64 SR00065 30191

    Untitled

    Abstract: No abstract text available
    Text: SH57K73 MASK 8-bit Micro-controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4V - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz Internal PLL divided by 1, 2, 4, 8 MCU Operation Modes: - STOP Mode: MCU & PLL Off, 32.768kHz clock off


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    PDF SH57K73 SH6502-based 768kHz 1943MHz 768kHz, 1943MHz/8,

    IC 7432

    Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz


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    PDF NE699M01 NE699M01 NE687) OT363 24-Hour IC 7432 AT 1004 S12 IC 7432 power dissipation NE687 NE699M01-T1 S21E of IC 7432 S12 sot 23-6

    CF61A5901

    Abstract: DEA252400BT-2030A1 DEA252450BT-2027A1 DEA252450BT-2024C1 DEA162450BT-1210A1 DEA202450BT-1195A1 DEA202450BT-1213B1 DEA252400BT-2027A1 DEA252450BT-2030A1 DEA252450BT-2031A1
    Text: TDK RF Products for Wireless LAN 02/01/05 for 2.4GHz Multilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2500 1.2 2300 2500 1.4 2400 2500 1.5 2400 2500 2.1 2400 2500 3.0 2400 2500 1.5 2400 2500 2.3 2400 2500 3.0 MHz 915 915 915


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    PDF CF61A5901 960MHz 1990MHz 2000MHz 2170MHz 3200MHz CF61A5901 DEA252400BT-2030A1 DEA252450BT-2027A1 DEA252450BT-2024C1 DEA162450BT-1210A1 DEA202450BT-1195A1 DEA202450BT-1213B1 DEA252400BT-2027A1 DEA252450BT-2030A1 DEA252450BT-2031A1

    rf 315mhz sample circuit

    Abstract: MAX2640 181Noise
    Text: WIRELESS, RF, AND CABLE Jul 23, 2003 MAX2640 LNA Operates at 315MHz for Automotive Keyless Entry Applications The MAX2640 low-cost, ultra low-noise amplifier LNA was originally characterized over the 400MHz to 2500MHz range. The device has also proven useful at 315MHz for keyless entry applications. Testing has shown that the part


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    PDF MAX2640 315MHz 400MHz 2500MHz 315MHz, 315MHz 30pcs. rf 315mhz sample circuit 181Noise

    SH57P90

    Abstract: s43 p60
    Text: SH57K92 Mask 8-bit Micro controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4 - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz divided by 1, 2, 4, 8 Internal PLL MCU Operation Modes: - STOP mode: MCU & PLL Off, 32.768kHz clock off


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    PDF SH57K92 SH6502-based 768kHz 1943MHz 768kHz, 1943MHz/8, SH57P90 s43 p60

    digital audio amp circuit diagram

    Abstract: master volume control for 5.1 audio amp audio power amp circuit diagram PM741 5.1 audio amp HPF5 audio amp digital input audio amp S4S10 micamp
    Text: DIGITAL AUDIO PRODUCTS DIGITAL AUDIO and MULTIMEDIA SOUND CODECs 1 Resolution: 16bits ( 2 ) Recording Function • 3-Input Selector (Internal MIC, External MIC and LINE) • MIC-Amp: Pre-Amp, EQ-Amp, HPF-Amp for wind-noise • Digital ALC (Automatic Level Control) circuit


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    PDF 16bits 48kHz) 32kHz, -50dB, 64-pin 16-Bit AK4561 AK4561 digital audio amp circuit diagram master volume control for 5.1 audio amp audio power amp circuit diagram PM741 5.1 audio amp HPF5 audio amp digital input audio amp S4S10 micamp

    VP15-00-3

    Abstract: marking NF5 pc8103 43251 UPC8103T c2b nec PC8102
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable


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    PDF PC8102T PC8102T VP15-00-3 marking NF5 pc8103 43251 UPC8103T c2b nec PC8102

    Hitachi DSA00118

    Abstract: 3SK309 l2726 21L47 327 MARKIG
    Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain


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    PDF 3SK309 ADE-208-472 Hitachi DSA00118 3SK309 l2726 21L47 327 MARKIG

    fenwal thermistor

    Abstract: peltier element schematic peltier schematic 196-302LAD-002 peltier cooler schematic CCD65 equivalent of transistor 8050 8047b IMAGE Transistor Q 8050 Scientific Imaging Technologies
    Text: CCD65 Series Peltier Pack Electron Multiplying CCD Sensor INTRODUCTION The CCD65 is part of the new L3Vision2 range of products from e2v technologies. This device uses a novel output amplifier circuit that is capable of operating at an equivalent output noise of less than one electron at pixel rates of over


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    PDF CCD65 fenwal thermistor peltier element schematic peltier schematic 196-302LAD-002 peltier cooler schematic equivalent of transistor 8050 8047b IMAGE Transistor Q 8050 Scientific Imaging Technologies

    CCD65

    Abstract: equivalent of transistor 8050 e2v ccd pinhead Scientific Imaging Technologies E2V Technologies R12HV 8060B 7120 sensor 8050 TRANSISTOR equivalent
    Text: CCD65 Series Ceramic Pack Electron Multiplying CCD Sensor INTRODUCTION The CCD65 is part of the new L3Vision2 range of products from e2v technologies. This device uses a novel output amplifier circuit that is capable of operating at an equivalent output noise of less than one electron at pixel rates of over


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    PDF CCD65 equivalent of transistor 8050 e2v ccd pinhead Scientific Imaging Technologies E2V Technologies R12HV 8060B 7120 sensor 8050 TRANSISTOR equivalent

    BB304M

    Abstract: 1SV70 DSA003643
    Text: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


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    PDF BB304M ADE-208-605D 200pF, OT-143Rmod) BB304M 1SV70 DSA003643

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification 2.4GHz low voltage RF transceiver SA2420 DESCRIPTION PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed for high-performance low-power communication systems for


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    PDF SA2420 SA2420 -10dB.

    MC-7852G

    Abstract: 9746 MC-7852 mc7852g 7805 nec mc 3734
    Text: CATV 18 dB PUSH-PULL AMPLIFIER MC-7852G FEATURES OUTLINE DIMENSIONS Units in mm • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (6.4 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C,


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    PDF MC-7852G MC-7852 24-Hour MC-7852G 9746 mc7852g 7805 nec mc 3734

    T1G4005528-FS

    Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features


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    PDF T1G4005528-FS T1G4005528-FS C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver


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    PDF 25GHz 12dBm T-SSOP-16 fl235b05 fi23StiQS A23SbD5

    old Resistors Siemens s

    Abstract: characteristics of mixer circuit diagram 900MHZ PMB2333 S-11
    Text: SIEM EN S Mixer/Amplifier PMB 2333 Preliminary Specification Bipolar 1C ~ Functional Description, Benefits: • New B6HF bipolar technology, 25G H z ft • Small outline T-SSO P 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver


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    PDF 25GHz 12dBm fl23Sb05 623SbQS T-SSOP-16 fl23SbD5 old Resistors Siemens s characteristics of mixer circuit diagram 900MHZ PMB2333 S-11

    abe 429

    Abstract: MwT-A9 MWT-A970
    Text: M wT- A9 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES !-7*1 r •-* • +24.5 dBm OUTPUT POWER AT 12 GHz 67 • 9 dB SMALL SIGNAL GAIN AT 12 GHz ee — r 9B • 1.6 dB NOISE FIGURE AT 12 GHz


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    PDF l-75-l t-97-- MwT-A973 -F82- abe 429 MwT-A9 MWT-A970