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    Abstract: No abstract text available
    Text: BUR51S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    Text: 2N1717+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


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    PDF 2N1717 Freq16M

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    Text: 2N412 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)13 I(C) Max. (A)15m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)13 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    Text: 2N1714+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


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    PDF 2N1714 Freq16M

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    Abstract: No abstract text available
    Text: 2N1721 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


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    Abstract: No abstract text available
    Text: 2SD1585 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD1585 Freq16M

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    Abstract: No abstract text available
    Text: 2N1720 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)750m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


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    Text: 2N1428 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V).10 @I(C) (A) (Test Condition)5.0m


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    PDF 2N1428 Freq16M

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    Abstract: No abstract text available
    Text: 2N1429 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V).10 @I(C) (A) (Test Condition)5.0m


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    Abstract: No abstract text available
    Text: 2N1715+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


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    PDF 2N1715 Freq16M