mosfet TRANSISTOR ECG
Abstract: PB2063 slus458b ECG Machine CKG57dX7R2A475M smd PULSE TRANSFORMER ERJ-3EKF7500V forward converter PULSE pb2063 ERJ1WRQJR
Text: Reference Design UCC38C42 25-Watt Self-Resonant Reset Forward Converter Reference Design UCC38C42 25-Watt Self-Resonant Reset Forward Converter Lisa Dinwoodie Power Supply Control Products Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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UCC38C42
25-Watt
mosfet TRANSISTOR ECG
PB2063
slus458b
ECG Machine
CKG57dX7R2A475M
smd PULSE TRANSFORMER
ERJ-3EKF7500V
forward converter
PULSE pb2063
ERJ1WRQJR
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SLUU192A
Abstract: SLUA299 CRCW0805 UCC2897PW UCC2897 forward converter using active clamp active clamp controller pa0373 REGULATOR 48V TO 24 tdk 51R1
Text: Reference Design 48 V to 3.3 V Forward Converter with Active Clamp Reset Using the UCC2897 Active Clamp Current Mode PWM Controller Reference Design SLUU192A − March 2004 − Revised April 2004 Reference Design PR265A 48V to 3.3V Forward Converter with Active Clamp Reset Using the UCC2897 Active
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UCC2897
SLUU192A
PR265A
SLUA299
CRCW0805
UCC2897PW
forward converter using active clamp
active clamp controller
pa0373
REGULATOR 48V TO 24
tdk 51R1
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horizontal deflection circuit
Abstract: BY459X-1500 BY459 BY459F-1500 BY459X
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION BY459F-1500 QUICK REFERENCE DATA Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery
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BY459F-1500
OD100
horizontal deflection circuit
BY459X-1500
BY459
BY459F-1500
BY459X
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Untitled
Abstract: No abstract text available
Text: 1N3198 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor Material Package StyleAxial-17 Description
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1N3198
StyleAxial-17
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Untitled
Abstract: No abstract text available
Text: APD200 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor Material Package StyleDO-35 Description
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APD200
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: SK3463 Diodes Forward Reference Diode If Max A 50m I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)50m I(RM) Max.(A) Reverse Current10u @V(R) (V)(Test Condition) Semiconductor MaterialSilicon Package StyleAxial-B
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SK3463
Current10u
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Untitled
Abstract: No abstract text available
Text: BZX75C2V1 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250m V(FM) Max.(V) Forward Voltage2.05 @I(FM) (A) (Test Condition)1.0m I(RM) Max.(A) Reverse Current500n @V(R) (V)(Test Condition)5.0 Semiconductor MaterialSilicon Package StyleDO-7
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BZX75C2V1
Current500n
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Untitled
Abstract: No abstract text available
Text: CDLL4829 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage990m @I(FM) (A) (Test Condition)1.0m I(RM) Max.(A) Reverse Current100n @V(R) (V)(Test Condition)20 Semiconductor MaterialSilicon Package StyleSOD-80
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CDLL4829
Voltage990m
Current100n
StyleSOD-80
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MZ2362
Abstract: No abstract text available
Text: MZ2362 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition)10m I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor MaterialSilicon Package StyleDO-41 Description
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MZ2362
StyleDO-41
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maximum current rating of diodes
Abstract: HVCA Catalog diode Forward Reference Diode HV Component Associates 848 diode
Text: DIODE – GENERAL CURVES AND TEST SET UPS These curves apply to most diodes in this catalog. For further information, please contact the factory. Reverse Recovery Test 1/2 Average Forward Current Max. IFAVM TRR Zero Reference + D.U.T. Pulse Generator Average Forward
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Abstract: No abstract text available
Text: CDLL400 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.0m I(RM) Max.(A) Reverse Current30n @V(R) (V)(Test Condition)30 Semiconductor MaterialSilicon Package StyleSOD-80
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CDLL400
Current30n
StyleSOD-80
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Untitled
Abstract: No abstract text available
Text: 1N3896 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage814m @I(FM) (A) (Test Condition)50m I(RM) Max.(A) Reverse Current10u @V(R) (V)(Test Condition)10 Semiconductor MaterialSilicon Package StyleDO-35 Description
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1N3896
Voltage814m
Current10u
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: SK3864 Diodes Forward Reference Diode If Max A 30m I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.34 @I(FM) (A) (Test Condition)1.5m I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor MaterialSilicon Package StyleDO-35 Description
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SK3864
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: .4M.64FR10/1N816 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor Material Package StyleDO-7 Description
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64FR10/1N816
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Untitled
Abstract: No abstract text available
Text: SV100A3 Diodes Forward Reference Diode If Max A 500m I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)225m I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor MaterialSilicon Package StyleAxial-10
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SV100A3
StyleAxial-10
Description350mV
750mW;
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Untitled
Abstract: No abstract text available
Text: AP3898 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)20m I(RM) Max.(A) Reverse Current10u @V(R) (V)(Test Condition)10 Semiconductor MaterialSilicon Package StyleDO-35 Description
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AP3898
Current10u
StyleDO-35
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DO41
Abstract: DO-41
Text: Stabistors Forward Reference Diodes 1 133 )- DO-41 Centrar Sem iconductor Corp. 134
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DO-41
DO41
DO-41
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1N816
Abstract: 1n816 diode Forward Reference Diode
Text: 1n 8 16 FORWARD REFERENCE DIODE STABISTOR Ml ! »utili • - - - sv central semiconductor Corp. JEDEC DO-35 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N816 ï s a Silicon Forward Reference Diode designed for low level voltage regulating applications where a stabistor is required.
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1N816
DO-35
If-100mA
1n816 diode
Forward Reference Diode
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Rectifier diode BY559-1500 fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Low forward recovery voltage
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BY559-1500
BY559
100us
100ms
T0220AC)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Damper diode BY479X-1700 fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Low Forward recovery voltage Fast switching
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BY479X-1700
64kHz.
BY479X
OD113
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Damper diode BY559-1500U fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA VR = 1500 V Low forward volt drop Low forward recovery voltage
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BY559-1500U
BY559
BY559-1500U
T0220AC)
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Silicon Schottky Diode sod123
Abstract: SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6
Text: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAT56 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT continuous reverse voltage 60 V If continuous forward current 30 mA vF forward voltage
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BAT56
OD123
MBA038
OD123.
711Dfl2b
Silicon Schottky Diode sod123
SCHOTTKY BARRIER DIODE
BAT56
T35 diode
diode T35 -4-D6
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON PLE 1.5 REFERENCE DIODE DESCRIPTION Low voltage reference diodes in plastic package for specific applications where very tigh AVz is required. AVz specified is lower than 150mV for a forward cur rent of 5mA. ABSO LU TE RATING S limiting values
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150mV
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Rectifier diodes PBYR245CT series Schottky FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching • Reverse surge capability
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PBYR245CT
OT223
OT223
100ms
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