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    FOR TRANSISTOR Search Results

    FOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    FOR TRANSISTOR Price and Stock

    Microchip Technology Inc 2N1613A

    Bipolar Transistors - BJT NPN Transistor
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    Microchip Technology Inc 2N3442

    Bipolar Transistors - BJT NPN Transistor
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    Microchip Technology Inc JANS2N2920U

    Bipolar Transistors - BJT NPN Dual Transistors
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    Microchip Technology Inc 2N3584

    Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Tray
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    Microchip Technology Inc 2N2060

    Transistor BJT Array Dual NPN 60V 0.5A 6-Pin TO-78
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    Onlinecomponents.com 2N2060
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    Find more FOR TRANSISTOR price and stock on Findchips.com

    FOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sp8m3

    Abstract: RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k
    Text: Products for Automotive Electronic Equipment RECOMMENDED DEVICES For Power supply / DC/DC converter / Various types of motors For Relay / Motor drive Transistors for solenoid motor drive Ultra-low ohmic chip resistors for current detection DTDG14GP , DTDG23YP , 2SD2143 , QSH29


    Original     		PDF DTDG14GP DTDG23YP 2SD2143 QSH29 DTDG23YP DTDG14GP 2SD2143 QSH29 2SB1260 sp8m3 RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k

    STA471A

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent
    Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors


    Original     		PDF 2SA1725/2SC4511 15max. STA471A pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent

    transistor

    Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor
    Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    NPTB00050B

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B

    Untitled

    Abstract: No abstract text available
    Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz


    Original     		PDF BFP410 AEC-Q101 OT343

    Dupline

    Abstract: ELEVATOR CONTROL pcb dupline 128 power line carrier communication dc G21305511 carlo gavazzi module Carlo Gavazzi CHANNEL GENERATOR ELEVATOR dc-power-supply dc power carrier communication
    Text: Du line Output-Module for Elevators Type G 2130 55.1 700 Fieldbus Installationbus • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline® carrier


    Original     		PDF

    TIM202

    Abstract: No abstract text available
    Text: TIM 10, 20, 40 Vishay Aztronic Pulse Transformers for General Use FEATURES • These micro transformers are designed for pulse transmission for frequencies up to 300kHz • They are used for signal synchronization, power supplies and transistor control • Available taped and reeled which allows automatic pick


    Original     		PDF 300kHz 200mA 300kHz 1000VRMS 50200mA 100mA 400mA TIM202

    Untitled

    Abstract: No abstract text available
    Text: Dupline Field- and Installationbus Output-Module for Elevators Type G 2130 55.1 700 • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline carrier


    Original     		PDF G2196

    transistor TO220

    Abstract: transistor TO-3P TO3-P M1847 m175 all type transistor to3p
    Text: Transistor Holders-1 for TO-220 ＊Use for IT related equipment or other applications ＊Our Variations are used for TO-220 type and TO-3P type transistor ＊Available for any custom order P2187 OPTICAL FIBER 光ケーブルコネクター M1922 With heatsink


    Original     		PDF P2187 M1922 M1761 M1744 M1847 M1728 M1748 M1927 transistor TO220 transistor TO-3P TO3-P m175 all type transistor to3p

    depletion 400V power mosfet

    Abstract: P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet
    Text: AN-D27 Application Note DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the basis for their design-ins. High breakdown


    Original     		PDF AN-D27 depletion 400V power mosfet P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet

    4126L

    Abstract: 4126
    Text: UTC 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed


    Original     		PDF 110VAC O-126 4126L QW-R204-021 4126L 4126

    Untitled

    Abstract: No abstract text available
    Text: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed


    Original     		PDF 110VAC O-126 4128L QW-R204-020

    Untitled

    Abstract: No abstract text available
    Text: TB6559FG TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6559FG Full-Bridge Driver IC for DC motor TB6559FG is a full-bridge driver IC for DC motor which uses LDMOS for output transistors. It adopts MOS processes for upper Pch and lower Nch transistors, and introduces a constant-current or direct


    Original     		PDF TB6559FG TB6559FG TB6559F

    bfp410

    Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		PDF BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB

    Untitled

    Abstract: No abstract text available
    Text: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed


    Original     		PDF 110VAC O-126 4128L QW-R204-020

    Untitled

    Abstract: No abstract text available
    Text: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment


    Original     		PDF BD159G BD159/D

    BD159

    Abstract: BD159G
    Text: BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line−Operated Equipment


    Original     		PDF BD159 BD159/D BD159 BD159G

    Untitled

    Abstract: No abstract text available
    Text: BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line−Operated Equipment


    Original     		PDF BD159 BD159/D

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BF 771 • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type M arking O rdering code for versions on 8 mm-tape Package BF 771 R3 Q62702-F990 SOT 23


    OCR Scan     		PDF Q62702-F990

    vibrator detector

    Abstract: 251C VQFP48
    Text: Flower M ana g em ent LSI for C ellu lar phones BD6Q21 KV •Description The BD6021 KV is a power management LSi for cellular phones. 6-channel CMOS type regulators, 4-channel detectors, a driver for vibrator, 4-channel NMOS transistors for switch, an inverting power supply


    OCR Scan     		PDF BD6021 22S-6452 ei62-715 vibrator detector 251C VQFP48

    SAW MARKING CODE SOT-23

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor • • BF 799 Suitable for broadband RF amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape


    OCR Scan     		PDF Q62702-F788 Q62702-F935 SAW MARKING CODE SOT-23

    transistor marking 2A H

    Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.


    OCR Scan     		PDF 2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108