Untitled
Abstract: No abstract text available
Text: MÖE T> m SOLITRON DEVICES INC fl3bflb02 GGG37Ö1 3bb « S O D T-sg-iH 3 CvdOLITRON DEVICES PRODUCT SPECIFICATION cust. DWG -24 VOLT REGULATOR | 2% 1 sì _ I I C LASS 0 C to +70°C Ge ne r al Purpose REV . - D E V IC E M A R K IN G ST A N D A R D ial S
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fl3bflb02
GGG37Ã
CJSE062
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2N5531
Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
Text: SOLITRON DEVICES INC ' T^ 3 S~o5' DeTJ fl3bflb02 DDDnst. b _ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE L E V E L TO 3 x10 l4 n /C m 2
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fl3bflb02
BR100A
BR101A
3x10l4n/Cm2
BR100A
2N5531
SOLITRON
10MHZ
2N5527
BR101A
SOLITRON DEVICES
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diode t95
Abstract: SOLITRON Solitron product catalog SOLITRON DEVICES
Text: SOLITRON DEVICES INC Jfatltron 4AE T> m fl3bflb02 D003b03 T'iS « S O D ULTRA FAST RECOVERY RECTIFIERS 500V, 6 A , 35ns MAXIMUM RATINGS PER DIODE SYMBOL PARAMETER WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF A V PEAK ONE CYCLE IFSM NON-REPETITIVE.
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flb02
D003b03
VRWM-400V
300hS,
35ris
SDR6500
MIL-S-19500
diode t95
SOLITRON
Solitron product catalog
SOLITRON DEVICES
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE
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fl3bflb02
00G353b
5DF140
SDF140
MIL-S-19500
IF-25A.
IF-25A
300nS.
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Untitled
Abstract: No abstract text available
Text: MAE J> m SO LIT RO N DEVICES INC ics r a m i rs\n iirr-ir fl3bflb02 OGDBSflM SG3 « S O P Q A T Ä L O Q _ P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. o.3n JAA JAB SDF9130 SDF9130 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS
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fl3bflb02
-100V
SDF9130
MIL-S-19500
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SOLITRON
Abstract: 734 10 pins
Text: SOLITRON DEVICES INC Joiitron {¿PtSft MAE » ^ , • jKffifc''tfSP.SJS« fl3bflb02 □ □ □ 3 S R C1 734 « S O D p ro d u c t catalog ULTRA FAST RECOVERY RECTIFIERS MAXIMUM RATINGS PER DIODE PARAMETER 7-03-/? 100V. UNITS SYMBOL 3 0 A , 50ns 100 V AVERAGE FORWARD CURRENT IF AV
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fl3bab02
VRWM-100V
SDR30100
MIL-S-19500
300uS.
SOLITRON
734 10 pins
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Untitled
Abstract: No abstract text available
Text: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .
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483mm)
0254mm)
fl3bflb02
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Untitled
Abstract: No abstract text available
Text: PRODUCT CâTâLO i Æ lltro n N-CHANNEL ENHANCEMENT MOS FET 90 0V, 11A, 0.95D SDF11N90 GAF FEATURES • • • • • • • • SCHEMATIC <§> TERMINAL G <§H <D ABSOLUTE MAXIMUM RATINGS PARAMETER 1 GATE 2 DRAIN 3 SOURCE STANDARD BEND CONFIGURATIONS SYMBOL
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SDF11N90
MIL-S-19500
IF-11A
fl3bflb02
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÂLO' Æutron POSITIVE REGULATOR, FIXED SDP7812A SDP7812A SDP7812A JAA JAB JDA PARAMETER RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS:JAA.JAB LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-STD-883
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SDP7812A
500mA.
fl3bflb02
MIL-STD-883
B48-43I1
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Untitled
Abstract: No abstract text available
Text: PRODUCT Æ lltro n DEVICES.INC. 3301 ELECTRONICS UAY • WEST PALM BEACH, FLORIOA 334074 TEL: 407 848-4311 • TLX: SI-3435 • FAX: (407) 863-5946 N~CHANNEL ENHANCEMENT MOS FET 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - s o u r ce Vo 1t .(1)
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SI-3435
fl3bflb02
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F 407 Diode
Abstract: SDS30045 N 407 Diode
Text: PRODUCT CATTAIL « Æ lltron SCHOTTKY POWER RECTIFIERS 45V, 30A, 0.80V 5DS30045 SDS30045 SDS30045 5D530045 SDS30045 SDS30045 FEATURES • • • • • • • • JAA JAB JEA JEB JEC JED RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS
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5DS30045
SDS30045
5D530045
MIL-S-19500
MIL-STD-883
100KHZ
300MS.
F 407 Diode
N 407 Diode
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SDF034
Abstract: No abstract text available
Text: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)
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SDF034
SDF034
MIL-S-19500
fl3bfib02
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Untitled
Abstract: No abstract text available
Text: C ÂTALO _ Æ ï llt r o n nn,cr, POSITIVE REGULATOR, ADJUSTABLE JAA JAB JDA ABSOLUTE MAXIMUM RATINGS FEATURES • • • • • • • • PARAMETER SYMBOL TOTAL POWER DISSIPATION PD INPUT TO OUTPUT VOLTAGE DIFFERENTIAL RUGGED PACKAGE HI-REL CONSTRUCTION
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MIL-STD-883
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SOLITRON DEVICES
Abstract: SOLITRON TH40 JIS73
Text: SOLITRON DEVICES INC fll 8368602 SO LITRON DEVICES INC 81C 02241 D e | flBLflbOS 0005S41 1 | D 0 ~f~ 71' fi ' i I D & F L & C T /0 < / TVPg NO. GROUP •NO, A AND/O R SYMBOL S a£ X in i S . S A h . f s 3 K *F £ 4 5 f l e r . T /Ò 3 C H A R A C T E R IS T IC S
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0002E41
-----81C
SOLITRON DEVICES
SOLITRON
TH40
JIS73
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BDY39
Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Text: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1
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kk3819
Abstract: kk4223
Text: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2
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2N3066
2N3067
2N3068
2N3069
2N3070
2N3071
2N3085
2N3087
2N3089
2N3089A
kk3819
kk4223
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Untitled
Abstract: No abstract text available
Text: Ä T TÄ tL N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " 0.508mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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508mm)
381mm)
0254mm)
SDF500
2N5515
2N5524,
2N4867,
2N4868
fl3bflb02
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Untitled
Abstract: No abstract text available
Text: re [D U J © Y © Ä T C M X P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS .029" (0.737mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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737mm)
0254mm)
2N5018,
2N5019,
2N5114
2N5116,
2N5319
fl3bflb02
QQ04113
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Untitled
Abstract: No abstract text available
Text: ^TT^[L L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S L@W M@0©i Type Number C ase Style ( T O - Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) Yos Max (uMhos) 2N3684
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2N3684
2N3684A
2N3685
2N3685A
2N3686
2N3686A
2N3687
2N3687A
2N4867
2N4867A
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0p07cp
Abstract: 0P07C 0P-07Cp op 07 op amp 0P07CJ 0P-07C 0P07CZ 0P07CS 0p07 op07 metal type
Text: SOLITRON DEVICES INC flb D e flBbflbOS OOOSSDS T Jlf-79-06^10 I ! . . . . OPERATIONAL AM PLIFIERS Bolitron D E V I C E S , I N C h t l o p -07 . • ■ ■ ■ « W ■ W l H I-TEC H LIN E A R ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER GENERAL DESCRIPTION
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Jlf-79-06
OP-07
0P07A)
109dB
OP-07A)
0P-07
250mV
ODOSS11
T-79-06-10
0DQSS15
0p07cp
0P07C
0P-07Cp
op 07 op amp
0P07CJ
0P-07C
0P07CZ
0P07CS
0p07
op07 metal type
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