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    FILTRONIC COMPOUND SEMICONDUCTORS Search Results

    FILTRONIC COMPOUND SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FILTRONIC COMPOUND SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RT4350

    Abstract: FMS2017-001 FMS2017-001-EB FMS2017QFN MIL-HDBK-263 RF3310 5766 RF112
    Text: FMS2017QFN Preliminary Data Sheet 2.1 2.4GHz DPDT GaAs Single-Band WLAN Switch Features: Functional Schematic V4 ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications ♦ Excellent low control voltage performance ♦ Very low Insertion loss typ. 0.6dB at 2.5GHz


    Original     		PDF FMS2017QFN 11b/g FMS2017QFN MIL-STD-1686 MIL-HDBK-263. RT4350 FMS2017-001 FMS2017-001-EB MIL-HDBK-263 RF3310 5766 RF112

    FMS2007

    Abstract: FMS2007-001 FMS2007-001-EB FMS2007QFN MIL-HDBK-263 capacitor 100pF 0603
    Text: FMS2007QFN Preliminary Data Sheet 2.2 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Very High Tx-Rx isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT


    Original     		PDF FMS2007QFN 11b/g FMS2007QFN MIL-STD-1686 MIL-HDBK-263. FMS2007 FMS2007-001 FMS2007-001-EB MIL-HDBK-263 capacitor 100pF 0603

    Untitled

    Abstract: No abstract text available
    Text: Production 2.2 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz


    Original     		PDF FMS2031-001 42dBm 35dBm FMS2031-001 MIL-STD-1686 MILHDBK-263. FMS2031-001-TR FMS2031-001-TB FMS2031-001-EB

    FPM2750

    Abstract: CAP-22nF-0603-10 Filtronic Components
    Text: FPM2750QFN Datasheet v3.0 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)


    Original     		PDF FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 FPM2750 CAP-22nF-0603-10 Filtronic Components

    Untitled

    Abstract: No abstract text available
    Text: FMS2017QFN Preliminary Data Sheet 2.2 2.4GHz DPDT GaAs Single-Band WLAN Switch Features: Functional Schematic V4 ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications ♦ Excellent low control voltage performance ♦ Very low Insertion loss typ. 0.6dB at 2.5GHz


    Original     		PDF FMS2017QFN 11b/g FMS2017QFN MIL-STD-1686 MIL-HDBK-263.

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz


    Original     		PDF FMS2031-001 10Watt 42dBm 35dBm FMS2031-001 MIL-STD-1686 MILHDBK-263. FMS2031-001-TR FMS2031-001-TB FMS2031-001-EB

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet FMS2014-001 2.0 High Power GaAs SPDT Switch Features: Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


    Original     		PDF FMS2014-001 FMS2014-001 FMS2014-001-TR FMS2014-001-TB FMS2014-001-EB

    FMS2014-001

    Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
    Text: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


    Original     		PDF FMS2014QFN FMS2014QFN MIL-STD-1686 MIL-HDBK-263. FMS2014-001 FMS2014-001-EB MIL-HDBK-263

    FMS2007

    Abstract: FMS2007-001 FMS2007-001-EB FMS2007QFN MIL-HDBK-263
    Text: FMS2007QFN Preliminary Data Sheet 2.1 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Very High Tx-Rx isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT


    Original     		PDF FMS2007QFN 11b/g FMS2007QFN MIL-STD-1686 MIL-HDBK-263. FMS2007 FMS2007-001 FMS2007-001-EB MIL-HDBK-263

    tba300

    Abstract: No abstract text available
    Text: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz


    Original     		PDF FMS2031-001 10Watt 42dBm 35dBm FMS2031-001 MIL-STD-1686 MILHDBK-263. FMS2031-001-TR FMS2031-001-TB FMS2031-001-EB tba300

    RT4350

    Abstract: No abstract text available
    Text: FMS2014QFN Preliminary Data Sheet 2.2 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


    Original     		PDF FMS2014QFN FMS2014QFN MIL-STD-1686 MIL-HDBK-263. RT4350

    Untitled

    Abstract: No abstract text available
    Text: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


    Original     		PDF FMS2014-001 FMS2014-001 MIL-STD-1686 MIL-HDBK-263.

    Untitled

    Abstract: No abstract text available
    Text: FMS2016QFN Preliminary Data Sheet 2.2 High Power GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under


    Original     		PDF FMS2016QFN 29dBat FMS2016QFN MIL-STD-1686 MIL-HDBK-263.

    FMS2020-001

    Abstract: FMS2020-001-EB FMS2020QFN MIL-HDBK-263
    Text: Preliminary Data Sheet 2.2 FMS2020QFN GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic ANT 3x3x0.9mm Packaged pHEMT Switch Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications


    Original     		PDF FMS2020QFN 38dBm FMS2020QFN MIL-STD-1686 MIL-HDBK-263. FMS2020-001 FMS2020-001-EB MIL-HDBK-263

    ims pcb

    Abstract: No abstract text available
    Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb

    Untitled

    Abstract: No abstract text available
    Text: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.4 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control


    Original     		PDF FMA3058 20GHz FMA3058 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3009

    Abstract: bc 1027 ma com 4 pin mmic
    Text: FMA3009 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • Pre-Production Datasheet v2.5 FUNCTIONAL SCHEMATIC: 10dB Gain Single Supply Self Biased 26dBm P1dB Output Power at 8.0V pHEMT Technology Bias Control Input Return Loss <-9dB Output Return Loss <-8dB


    Original     		PDF FMA3009 2-20GHZ 26dBm FMA3009 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263. bc 1027 ma com 4 pin mmic

    high power transistor s-parameters

    Abstract: No abstract text available
    Text: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD750SOT343 1850MHZ) 2002/95/EC) FPD750SOT343 EB750SOT343-BB EB750SOT343-BA EB750SOT343-BC 22-A114. EB750SOT343-BE EB750SOT343-BG high power transistor s-parameters

    DC-10

    Abstract: DC-20 FMS2029 FMS2029-000 MIL-HDBK-263 254um
    Text: FMS2029 Preliminary Datasheet v2.1 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports Non-Reflective Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical


    Original     		PDF FMS2029 FMS2029 FMS2029-000 DC-10 DC-20 FMS2029-000 MIL-HDBK-263 254um

    FMS2016-005

    Abstract: FMS2016-005-EB FMS2016QFN FMS2016QFN-1 MIL-HDBK-263
    Text: FMS2016QFN-1 Preliminary Data Sheet 2.1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance


    Original     		PDF FMS2016QFN-1 FMS2016QFN 22-A114 MIL-STD-1686 MIL-HDBK-263. FMS2016-005 FMS2016-005-EB FMS2016QFN-1 MIL-HDBK-263

    FMS2011

    Abstract: FMS2011-000-EB FMS2011-000-FF FMS2011-000-GP FMS2011-000-WP 958k rx2 1150
    Text: FMS2011 Preliminary Data Sheet 1.1 SP6T GaAs Multi-Band GSM Antenna Switch Features: ANT ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under


    Original     		PDF FMS2011 FMS2011 22-A114-B. MIL-STD-1686 MILHDBK-263. FMS2011-000-EB FMS2011-000-FF FMS2011-000-GP FMS2011-000-WP 958k rx2 1150

    FMA3008

    Abstract: 2-20GHZ UM 7108 F
    Text: FMA3008 Production Datasheet v2.9 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • FUNCTIONAL SCHEMATIC: 23 dBm Output Power 11dB Gain pHEMT Technology Input Return Loss < -8dB Output Return Loss < -10dB VDD RF Input RF Output GENERAL DESCRIPTION:


    Original     		PDF FMA3008 2-20GHZ -10dB FMA3008 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263. UM 7108 F

    wafer 60g

    Abstract: FMS2007 FMS2007-000-EB FMS2007-000-FF FMS2007-000-GP FMS2007-000-WP 80X80
    Text: FMS2007 Preliminary Data Sheet 2.2 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ Functional Schematic V4 Low Insertion loss Low Harmonic Distortion High Transmit-Receive Isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT


    Original     		PDF FMS2007 11b/g FMS2007 22-A114-B. MIL-STD-1686 MILHDBK-263. wafer 60g FMS2007-000-EB FMS2007-000-FF FMS2007-000-GP FMS2007-000-WP 80X80

    transistor marking code 1325

    Abstract: R04003 ims pcb filtronic Solid State
    Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State