Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FIGURE11 Search Results

    FIGURE11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Low Dropout Positive

    Abstract: No abstract text available
    Text: 300MA HIGH PSRR LOW DROPOUT CMOS LINEAR REGULATOR FSP2134 „ FEATURES „ z z z z z z z z z z z z Low dropout voltage: 180mV at 300mA Vo=3.3V Quiescent current: Typ. 65µA 2% Voltage Accuracy High PSRR: 70dB at 1KHz Thermal Shutdown Current Limiting Excellent line and load regulation


    Original
    PDF 300MA FSP2134 180mV 300mA FSP2134 FSP2134XXXX Low Dropout Positive

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory.


    Original
    PDF AZ4580 AZ4580 110dB vol6-21-6485

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory.


    Original
    PDF AZ4580 AZ4580 110dB

    MIMMG150DR120UZA

    Abstract: No abstract text available
    Text: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


    Original
    PDF MIMMG150DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UZA

    MIMMG200S060B6EN

    Abstract: No abstract text available
    Text: MIMMG200S060B6EN 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE sat with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery


    Original
    PDF MIMMG200S060B6EN 25CEV tsc10 Figure10. Figure11. Figure12. MIMMG200S060B6EN

    MIMMG150DR120UA

    Abstract: No abstract text available
    Text: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


    Original
    PDF MIMMG150DR120UA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UA

    MIMMG75SR060UK

    Abstract: No abstract text available
    Text: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


    Original
    PDF MIMMG75SR060UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR060UK

    MIMMG200DR120UZA

    Abstract: No abstract text available
    Text: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


    Original
    PDF MIMMG200DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG200DR120UZA

    MIMMG40H120XB6TN

    Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
    Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current


    Original
    PDF MIMMG40H120XB6TN Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG40H120XB6TN 1 phase igbt 1200V 40A module inverter circuit diagram

    MIMMG150W120X6TN

    Abstract: No abstract text available
    Text: MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP Trench+Field Stop technology □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery


    Original
    PDF MIMMG150W120X6TN Figure10. Figure11. Figure12. Figure13. MIMMG150W120X6TN

    MIMMG150DR120UK

    Abstract: AC welder circuit diagram
    Text: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


    Original
    PDF MIMMG150DR120UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UK AC welder circuit diagram

    MIMMG75SR120B

    Abstract: No abstract text available
    Text: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


    Original
    PDF MIMMG75SR120B Tempera75 Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR120B

    bridgelux test LM80

    Abstract: LM80 bridgelux EN62471 W3500 bridgelux BXRA cfl assembly manufacturing process C5000 C8000 DS16 LM80
    Text: Bridgelux RS Array Series Product Data Sheet DS16 BXRA – W3500, - W5700, - N4000, - N6300, - C5000, - C8000 Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,


    Original
    PDF W3500, W5700, N4000, N6300, C5000, C8000 bridgelux test LM80 LM80 bridgelux EN62471 W3500 bridgelux BXRA cfl assembly manufacturing process C5000 C8000 DS16 LM80

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original
    PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    HFBR-2522

    Abstract: No abstract text available
    Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated


    Original
    PDF 5964-40027E AV02-0730EN HFBR-2522

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    FSP2130

    Abstract: marking code 10 sot23 series connection of linear mosfet
    Text: 300MA HIGH PSRR LOW DROPOUT CMOS LINEAR REGULATOR FSP2130 „ FEATURES „ z z z z z z z z z z z Low dropout voltage: 180mV at 300mA Vo=3.3V Quiescent current: Typ. 65µA 2% Voltage Accuracy High PSRR: 70dB at 1KHz Thermal Shutdown Current Limiting Excellent line and load regulation


    Original
    PDF 300MA FSP2130 180mV 300mA OT23-3L FSP2130 marking code 10 sot23 series connection of linear mosfet

    15w audio amplifier circuit diagram

    Abstract: mosfet driver marking he sot23-6 MD4101 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A
    Text: MD4101 1.5W Filterless Class-D Mono Audio Amplifier General Description Features The MD4101 is a single supply,high efficiency P O at 10% THD+N, VDD = 5V 1.5W class-D audio amplifier. A low noise, RL = 8 Ω filterless PWM architecture eliminates the output


    Original
    PDF MD4101 MD4101 MO-178. 15w audio amplifier circuit diagram mosfet driver marking he sot23-6 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A

    5m48h

    Abstract: S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128
    Text: HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.19 12/2008 freescale.com Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: S12XE products in 208 MAPBGA packages


    Original
    PDF HCS12X MC9S12XEP100RMV1 S12XE MC9S12XEP100 MC9S12XE S12XE-Family 5m48h S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128

    MP-25

    Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original
    PDF NP88N055CLE, NP88N055DLE, NP88N055ELE NP88N055CLE O-262 O-220AB NP88N055DLE O-263 O-220AB) MP-25 NP88N055CLE NP88N055DLE NP88N055ELE

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312A-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS Mobile


    Original
    PDF PD4632312A-X 32M-BIT 16-BIT PD4632312A-X 48-pin I/O15)

    H10D4890

    Abstract: D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890
    Text: CRYDOM CO b u l l e t , n 8 2 31E T> m 5542537 □ □ □ □ m D 7 • CRY F2^-B/ C3YDOM C O M P A N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■


    OCR Scan
    PDF D6935 H10D4890 D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890