Untitled
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL DEVICES! MF-156DS-TR123-030/040/050 SONET.'SDH TRANSCEIVER DESCRIPTION '‘ hü< pixsus* ¡" ssì sáiíSKS"««!s: üjjhtxil t n o - - ‘ jii'rv, f > •'>" ’" iK " v r n t iy ¡sc? ¡,~ > ':o K i axes- n .îî "âÿrs ”««■ ai rrc s t. ft w h s 's v w s by »“ « n ff" r ' r g i t i s i
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MF-156DS-TR123-030/040/050
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rie 1105 resistor specification
Abstract: b3b72S2
Text: M M O TO R O LA Military 10538 Bi-Quinary Counter ELECTRICALLY TESTED PER: MPG 10538 The 10538 is a four bit counter capable of divide by two, five, or ten functions. It is composed of four set-reset master-slave flip-flops. Clock inputs trigger on the positive going edge of the clock pulse.
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SM015DR2
rie 1105 resistor specification
b3b72S2
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dm 1265 r
Abstract: No abstract text available
Text: M M O T O R O L A Military 10536 Universal Hexadecimal Counter ELECTRICALLY TESTED PER: 5962-8774501 The 10536 is a high speed synchronous counterthat can count up, count down, preset, or stop count at frequencies exceeding 100 MHz. The flexibility of this de
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counter015DR2
dm 1265 r
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R A LL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - , - RESERVED. - D C D C MOUN .100 PC 2X HOLE PATTERN TOLERANCES FOR ALL PCB LAYOUT DIMENSIONS TO BE + . 0 0 2 THE EOLLOWING EUNCTIONS
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TST11DGVRA2D
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TRANSISTOR BI 243
Abstract: No abstract text available
Text: Eli SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22A1/2/3 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. - P t L <t>b bi 10.7 11.0 .422 .433 3.0 3.2 .119 .125 .024 .030 .600 .750 .50 NOM. 11.6 12.0 .020 NOM. .457 3.0 3.3 .119 .129 6.9 7.5 .272 .295 e2 E 2.3 2.8 .091
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H22A1/2/3
ST1340-01
H22A2
H22A3
H22A1
4bbB51
D00b47H
TRANSISTOR BI 243
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TSPD11CGPC004
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T By 2 3 P U B LIC A T IO N R IG H T S - -, REVISIONS RESERVED. AD - 00 D E S C R IP T IO N A1 RE VI S E D RER EC O -11-005027 RK I MAR 11 HMR SPEC IFICATIO NS! . 030 3X D 195
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TSPD11CGSRA0TR04
TSPD11CGSRA004
TSPD11CGSPC204
TSPD11CGSPC004
TSPD11CGRA204
TSPD11CGRA004
TSPD11CGPCV004
TSPD11CGPC204
TSPD11CGPC004
01MAR05
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L123
Abstract: WSK-1A348-A2 7C3T-14474-EA 97BG-14474-AAB LS054R-403-N-4 7C3T-14474-GA 7C3T-14474-LA c19025 J112B SAE J1128
Text: 13 10 PLATING INFORMATION WIRE BRUSH TO BE NO MORE THAN 0.40 FROM CONDUCTOR CRIMP ZONE A1ZONE A2 INSIDE TERMINAL WIRE BRUSH TO BE BELOW TOP OF CONDUCTOR CRIMP ' w SECTION Z - Z S C A L E 5:1 . SECTION A-A PLATING NOTES: {FOR SMALL AND LARGE POLARIZATION RIB TERMINALS)
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ES-88
THICKNE55:
MX150
SD-33012-002
L123
WSK-1A348-A2
7C3T-14474-EA
97BG-14474-AAB
LS054R-403-N-4
7C3T-14474-GA
7C3T-14474-LA
c19025
J112B
SAE J1128
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Untitled
Abstract: No abstract text available
Text: ILD621/621GB QUAD CHANNEL ILQ621 /621GB DUAL CHANNEL Infineon technologies Multi-Channel Phototransistor Optocoupler FEATURES D im e n sio n s in in c h e s m m • Alternate Source to TLP621 -2/-4 and TLP621G B -2/-4 • Current Transfer Ratio (CTR) at Ip= 5.0 mA
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ILD621/621GB
ILQ621
/621GB
TLP621
TLP621G
ILD/Q621:
ILD/Q621GB:
39lector-E
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H21B
Abstract: H21B1 H21B2 H21B3
Text: E SOLI» □1 STATE D E | 3 A 7 5 0 a i □01c17a4 fi | •— I v c w nr k/ Optoelectronic Specifications. 1mm Aperture Photon Coupled Interrupter Module H21B1,H21B2,H21B3 The GE Solid State H21B Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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3A750ai
01c17a4
H21B1
H21B2
H21B3
RL-750fl
H21B
H21B3
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tspd11cgspc0
Abstract: No abstract text available
Text: CDNVERSIDN CHART CDNVERSIDN CHART D C B INCH MM INCH MM ,002 0 ,0 5 ,3 7 4 9 ,4 9 ,0 0 5 0,12 ,3 9 6 1 0 ,0 6 ,0 0 8 0,20 ,4 0 0 1 0 ,1 6 ,010 0 ,2 5 ,5 2 4 1 3 ,3 1 ,0 1 4 0 ,3 6 ,0 1 8 0 ,4 4 ,020 0 ,5 2 ,0 2 8 0 ,7 1 ,0 3 0 0 ,7 6 ,0 3 5 0 ,8 9 ,0 4 0 1,02
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40287S3L
CAD080992C
tspd11cgspc0
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RF2119
Abstract: PSSOP16 F2119
Text: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held
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F2119
915MHz
RF2119
800MHz
960MHz
RF2119
PSSOP16
F2119
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tai-157
Abstract: Trompeter 305 305-13 BL-982 RAYCHEM 1125
Text: RED INDICATES ORIGINAL OASH A NO / B \ -201 -202 -203 -204 -205 -206 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -210 -219 -220 -221 -222 -223 -224 -225 INCH .005 .030 .125 .187 .190 .255 .344 .439 .443 .500 .590 .600 1 .00 1.164 1.25 1.289 1.75
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Ml7/176-00002
TWC-78-1
TWC-124-
2524E0114,
TWC-78-2
C-124-2
BL-982
BL-1242
GC875TM24H,
221BBB,
tai-157
Trompeter 305
305-13
RAYCHEM 1125
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05-03-30
Abstract: No abstract text available
Text: \ î_ DETAIL2 DETAIL1 Scale 7:1 Scale 10:1 SIGNAL P A R GROUND/POWER A-A B-B NOTES: I PRODUCT SPECIFICATION PS-91525-001 2. PACKAQNG SPECIFICATION PK-91629-002 TRAY AND PK-91629-003 (TAPE AND REEL) 3. SCREW THREAD M2A X 0 / PITCH. RECOMMENDED SCREW THREAD M2 X 0.4 PITCH
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PS-9B25-001
PK-91629-002
PK-91629-003
03NI1
127un
PALLADIUM03-8465
SD-91803-003
05-03-30
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33077
Abstract: tyco "Pushbutton Switch" tspd11cgspc0 TSPD11FGPC004
Text: 3 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 - LOC REVISIONS D IST AD 00 RESERVED. BY TYCO ELECTRONICS CORPORATION. LTR A D E SC RIPTIO N DATE ECO — 0 5 — 13095 DWN IB 06JUN06 S P E C IF IC A T IO N S :
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06JUN06
01MAR05
33077
tyco "Pushbutton Switch"
tspd11cgspc0
TSPD11FGPC004
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MTA3055E
Abstract: a/MTA3055E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS
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MTA3055E
MTA3055E
a/MTA3055E
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SHER601
Abstract: SHER602 SHER603 SHER605 SSF11 SSF12 SSF13 SSF14
Text: SINO—AMERICAN SILICON ZD 54E • fl2fll74b 0000026 S ■ HIGH E FF IC IE N C Y R E C T IF IE R S 'T - 0 3 - 1 7 OPERATING AND STO R A G E TEM PER A TU R E - 6 5 ° C to + 17 5°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave
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a2fll74b
T-03-17
SHER601
SHER602
SHER603
DO-41
350x350x345
DO-15
SHER605
SSF11
SSF12
SSF13
SSF14
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Jaso J 140 N
Abstract: 1A34a WSK-1A348-A2 2L1T-14421-DA SD-33012-001 USCAR-21 C19025 PK-31300-516 -123A 2LIT-14421-CA
Text: 7 T A B LE 1 - TERMINAL CRIMP DIMENSIONS R EF E R E N C E T A B LE SUPPLER PART NO. RGHT PAYOFF L ffT PAYOFF 33000-0002 33000-1002 FORD PART NO. PLATNG WIRE SIZE 2L1T-14421-OA TN vg 2LÍT-14421-CA TN 16 avg 2L1T-14421-CA TN 16 avg 2L1T-14421-CA TN 20 avg ZZ ava
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2L1T-14421-O
T-14421-CA
2L1T-14421-CA
H011-1004
2L1T-14421-FA
2L1T-14421-EA
2LTT-14421-GA
Jaso J 140 N
1A34a
WSK-1A348-A2
2L1T-14421-DA
SD-33012-001
USCAR-21
C19025
PK-31300-516
-123A
2LIT-14421-CA
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2N6546
Abstract: 2N6547 180I 20C1 2N5875 2N5877
Text: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power
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N6546
2N6547
2N6546
500kHz
1N5820
1N4937
2N6547
180I
20C1
2N5875
2N5877
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130LA10A
Abstract: 130LA1 CH1817 CH1817ET
Text: Vi-W PKflHUV m * <• JUK 2 8 ' fc ’ •^ '9 , Cenmetek m ic ro e le c tro n ic s CH1817 / CH1817ET* — Low Profile Data Access Arrangement DAA Direct Connect Telephone Line Interface INTRODUCTION FEATURES The Cermetek CH1817 Low Profile DAA module provides thor
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CH1817
CH1817ET*
130LA10A
130LA1
CH1817ET
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2N3640
Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
Text: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed
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2N4208
2N2409
2N5910
2N2894A
65-1025B
050BSC
100BSC
27BSC
54BSC
2N3640
2N3304
2n4208
2N2409
2N4258
High Speed Switches
2n2894a
2N5910
sm 58 b transistors
2N2894
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BH Rf transistor
Abstract: mrf1150m
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.
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1150M
MRF1150M
BH Rf transistor
mrf1150m
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Untitled
Abstract: No abstract text available
Text: 20 PART CHARACTERISTICS NUMBER OF POSITION ASSEMBLY ITEM NUMBER 02 4 3 0 2 5 -0 2 0 0 04 4 3 0 2 5 -0 4 0 0 SEE NOTE LA S T CIRCUIT TYP. MATERIAL 0.71 TYP — | SIZES 2 0.71 & 4 06 4 3 0 2 5 -0 6 0 0 08 4 3 0 2 5 -0 8 0 0 10 4 3 0 2 5 -1 0 0 0 12 4 3 0 2 5 -1 2 0 0
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U4-0730
SDES-43a25-IQ00
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Burr Brown 3583AM
Abstract: 17313L ic 3583 3583
Text: 3583 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • WIDE POWER SUPPLY VOLTAGE: ±70V to ±150V • OUTPUT CURRENT TO 75mA • SLEW RATE: 30V/(is • FET INPUT: lB = 20pA max • THERMAL SHUT-DOWN PROTECTION • HERMETIC TO-3 PACKAGE, ISOLATED
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27S43
Abstract: No abstract text available
Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs
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