FET TRANSISTOR RF Search Results

FET TRANSISTOR RF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

FET TRANSISTOR RF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RD70HVF1 Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
RD70HVF1 Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 071J RF Transistor Selection 100OHM
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.	Original	PDF	RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band
16HHF1 Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
LAL04NA Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	PDF	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
A 1469 mosfet Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
grm708 Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
LAL04NA Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	PDF	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355
RD16HHF1 Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet
A 1469 mosfet Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET
TRANSISTOR D 1785 Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
2779, transistor Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547
c 879 transistor Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1	Original	PDF	RD00HHS1 30MHz RD00HHS1 30MHz c 879 transistor transistor t06 TRANSISTOR 7533 mosfet HF amplifier a 933 transistor f-30MHz 933 TRANSISTOR
transistor D 5024 Abstract: RD00HVS1 8582 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD00HVS1 175MHz RD00HVS1 175MHz transistor D 5024 8582

RD16HHF1 application notes Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
RD01MUS1-101 Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
RD01MUS1-101 Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1
RD02MUS1 Abstract: RD02MUS1-101 T112 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems
transistor D 5024 Abstract: 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor TRANSISTOR 7916 transistor 5024 RD00HVS1 TRANSISTOR 1383 transistor A 1264 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION 4.6MAX RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX 53MAX transistor D 5024 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor TRANSISTOR 7916 transistor 5024 TRANSISTOR 1383 transistor A 1264
DIODE GP 704 Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet
RD16HHF1 Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
RD20HMF1 Abstract: No abstract text available Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers	Original	PDF	RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFor
D 1652 transistor Abstract: MITSUBISHI RF POWER MOS FET RD20HMF1 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers	Original	PDF	RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFE D 1652 transistor MITSUBISHI RF POWER MOS FET 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748
TRANSISTOR D 1765 320 Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425

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FET TRANSISTOR RF Search Results

FET TRANSISTOR RF Result Highlights (5)

FET TRANSISTOR RF Datasheets Context Search

RD70HVF1

RD70HVF1

Untitled

16HHF1

LAL04NA

A 1469 mosfet

grm708

LAL04NA

RD16HHF1

A 1469 mosfet

TRANSISTOR D 1785

2779, transistor

c 879 transistor

transistor D 5024

RD16HHF1 application notes

RD01MUS1-101

RD01MUS1-101

RD02MUS1

transistor D 5024

DIODE GP 704

RD16HHF1

RD20HMF1

D 1652 transistor

TRANSISTOR D 1765 320