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    FET SM 367 Search Results

    FET SM 367 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET SM 367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1000uf, 25v electrolytic capacitor

    Abstract: capacitor 1000uF 25V capacitor 1000uf 10uf, 35v electrolytic capacitor 1000uf 25V electrolytic capacitor 25V Electrolytic capacitor ELECTROLYTIC CAPACITOR 330uF 63V 1N4148 diode capacitor 1000uF, 25V SM-1N4148
    Text: IRISMPS1 REFERENCE DESIGN International Rectifier • 233 Kansas Street El Segundo CA 90245 USA Technical Specifications 1. DC Input: V=36-72V, I= 1.0A max 2. Inrush Current: 4A max 3. Efficiency: Typical 75% when measured at maximum load high line 73% at low line


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    PDF 6-72V, 300msec 48Vin 36Vin -425kHz AN1018a IR40xx AN1024a IRIS4007K 1000uf, 25v electrolytic capacitor capacitor 1000uF 25V capacitor 1000uf 10uf, 35v electrolytic capacitor 1000uf 25V electrolytic capacitor 25V Electrolytic capacitor ELECTROLYTIC CAPACITOR 330uF 63V 1N4148 diode capacitor 1000uF, 25V SM-1N4148

    dnp 011

    Abstract: tk5p60v sm 6136 b triac 131-6 zener diode 400v 0.5a R/BT 8046 triac
    Text: Application Note 1845 ISL1904DEMO1Z: Offline Triac Dimmable Isolated LED Driver Introduction Design Specifications The ISL1904DEMO1Z demo board converts a high line AC input voltage to a 18V, 700mA DC output. It is implemented with Intersil’s critical conduction mode CrCM LED driver


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    PDF ISL1904DEMO1Z: ISL1904DEMO1Z 700mA ISL1904. ISL1904, ISL1904FAZ H2511-02152-1/16W1 H2511-04990-1/16W1 dnp 011 tk5p60v sm 6136 b triac 131-6 zener diode 400v 0.5a R/BT 8046 triac

    diode-connected FET

    Abstract: siliconix fet composite op amp for high performance
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627--550ns OPA637--450ns OPA627: OPA637: OPA637 diode-connected FET siliconix fet composite op amp for high performance

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    Abstract: No abstract text available
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627--550ns OPA637--450ns OPA627: OPA637: OPA637

    Untitled

    Abstract: No abstract text available
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627â 550ns OPA637â 450ns OPA627: OPA637:

    Untitled

    Abstract: No abstract text available
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627--550ns OPA637--450ns OPA627: OPA637: OPA637

    Untitled

    Abstract: No abstract text available
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627â 550ns OPA637â 450ns OPA627: OPA637:

    Untitled

    Abstract: No abstract text available
    Text: OPA 6 OPA 6 OPA627 OPA637 27 27 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627â 550ns OPA637â 450ns OPA627: OPA637:

    iso/8879-1986/siliconix fet composite op amp for high performance

    Abstract: No abstract text available
    Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627550ns to 0.01% OPA637450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION


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    PDF OPA627 OPA637 10kHz OPA627â 550ns OPA637â 450ns OPA627: OPA637: iso/8879-1986/siliconix fet composite op amp for high performance

    Untitled

    Abstract: No abstract text available
    Text: AMIS-30422 Micro-Stepping Stepper Motor Bridge Controller Introduction The AMIS−30422 is a micro-stepping stepper motor bridge controller for large current range bipolar applications. The chip interfaces via a SPI interface with an external controller in order to


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    PDF AMIS-30422 AMIS-30422/D

    FB 3306

    Abstract: pcf 817 CD4000 SERIES BOOK BR 8550 sn 16861 7 SEGMENT DISPLAY cd 4511 74 LS 00 Logic Gates pcf 9555 HC 40106 NXP 74LVC1G
    Text: TM Technology for Innovators Logic Selection Guide 2007 2 ➔ Logic Selection Guide Texas Instruments Important Notice Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any


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    Untitled

    Abstract: No abstract text available
    Text: bq2084-V150 DBT www.ti.com SLUS758 – JUNE 2007 SBS v1.1-COMPLIANT GAS GAUGE WITH LED DELAY FEATURES • • • • • • • • • • • Provides Accurate Measurement of Available Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification


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    PDF bq2084-V150 SLUS758 bq29312A 16-Bit

    BQ2940

    Abstract: No abstract text available
    Text: bq2084-V150 DBT www.ti.com SLUS758 – JUNE 2007 SBS v1.1-COMPLIANT GAS GAUGE WITH LED DELAY FEATURES • • • • • • • • • • • Provides Accurate Measurement of Available Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification


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    PDF bq2084-V150 SLUS758 bq29312A BQ2940

    Untitled

    Abstract: No abstract text available
    Text: bq2084-V133 www.ti.com SLUS640B – JUNE 2005 – REVISED FEBRUARY 2010 SBS v1.1-COMPLIANT GAS GAUGE FOR USE WITH THE bq29312 Check for Samples: bq2084-V133 FEATURES 1 • • • • • • • • • • • Provides Accurate Measurement of Available Charge in Li-Ion and Li-Polymer Batteries


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    PDF bq2084-V133 SLUS640B bq29312

    Untitled

    Abstract: No abstract text available
    Text: bq2084-V150 DBT www.ti.com SLUS758 – JUNE 2007 SBS v1.1-COMPLIANT GAS GAUGE WITH LED DELAY FEATURES • • • • • • • • • • • Provides Accurate Measurement of Available Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification


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    PDF bq2084-V150 SLUS758 bq29312A

    Fairchild Semiconductor Integrated Circuit Data Catalog 1970

    Abstract: No abstract text available
    Text: TPS40200-EP www.ti.com SGLS371 – JANUARY 2007 WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C


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    PDF TPS40200-EP SGLS371 200-mA Fairchild Semiconductor Integrated Circuit Data Catalog 1970

    Untitled

    Abstract: No abstract text available
    Text: TPS40200-EP www.ti.com SGLS371A – JANUARY 2007 – REVISED JANUARY 2013 WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER Check for Samples: TPS40200-EP FEATURES 1 • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication


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    PDF TPS40200-EP SGLS371A 200-mA

    Untitled

    Abstract: No abstract text available
    Text: TPS40200-EP www.ti.com SGLS371A – JANUARY 2007 – REVISED JANUARY 2013 WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER Check for Samples: TPS40200-EP FEATURES 1 • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication


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    PDF TPS40200-EP SGLS371A 200-mA

    Untitled

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659F – FEBRUARY 2006 – REVISED MARCH 2012 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER Check for Samples: TPS40200 FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 V to 52 V Output Voltage 700 mV to 90% VIN


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    PDF TPS40200 SLUS659F

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: 7. COMMON EL ECT RI CA L CHA RA C TE RI ST IC S 7 -1 P o w sr D issip ation The power dissipation of CMOS device is composed of two components: one static, the other dynamic. The total power dissipation is the sum of static and dynamic power dissipation. Static power dissipation is obtained by multiplying quiescent supply current by the supply voltage range


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    PDF AC-40

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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