KGF1607
Abstract: K1607 8958 fet 3773 SMD
Text: Pr E2Q0041-27-X3 im el in KGF1607 ar y ¡ electronic components KGF1607 ¡ electronic components This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1607, housed in a SMD type ceramic package, is a discrete GaAs power FET that features
|
Original
|
E2Q0041-27-X3
KGF1607
KGF1607,
KGF1607
pho2900
Al203
K1607
8958 fet
3773 SMD
|
PDF
|
KGF1658
Abstract: IS-54 ACP60 K1658
Text: E2Q0043-27-X2 Pr im el ar KGF1658 in y ¡ electronic components KGF1658 ¡ electronic components This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1658, housed in a SMD-type ceramic package, is a discrete GaAs power FET that features
|
Original
|
E2Q0043-27-X2
KGF1658
KGF1658,
KGF1658
Al203
IS-54
ACP60
K1658
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CU R AG RL-2260 Y FET US ENCY AP ED SA O PR V ALL IN ONE POWER TRANSFORMERS This series is manufactured to meet UL, CSA, VDE and This series is manufactured to meet UL, CSA, IEC specifications. Low interwinding capacitance and the VDE and IEC specifications. Low interwinding
|
Original
|
RL-2260
RL-2260-25-230
RL-2260-43-230
RL-2260-80-230
RL-2260-130-230
RL-2260-175-230
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US CU R AG RL-2271 Y FET SA ENCY AP ED O PR V RLD-2271 TWO IN ONE TRIPLE OUTPUT POWER TRANSFORMERS • CHASSIS MOUNT The RL-2271 and RLD-2271 Series Power Transformers have a triple output designed for 5VDC and ±12VDC or ±15VDC regulated power supplies. These transformers with
|
Original
|
RL-2271
RLD-2271
RL-2271
RLD-2271
12VDC
15VDC
100VA.
50/60Hz
50/60Hz)
2500VRMS.
|
PDF
|
HMC216MS8
Abstract: No abstract text available
Text: HMC216MS8 / 216MS8E v02.0705 10 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm
|
Original
|
HMC216MS8
216MS8E
HMC216MS8E
HMC216MS8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)
|
Original
|
AN30210A
AN30210A
|
PDF
|
TR218
Abstract: No abstract text available
Text: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)
|
Original
|
AN30210A
AN30210A
TR218
|
PDF
|
72V32
Abstract: AN30210A MO301
Text: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm 9.00±0.20 7.00±0.20 48 33 32 64 17 0.16+0.10 –0.05 0.15 0.10±0.10 0° to10° 0.50±0.25 LQFP064-P-0707 in • Operating supply voltage range: 1.5 V to 7.2 V
|
Original
|
AN30210A
LQFP064-P-0707
72V32
AN30210A
MO301
|
PDF
|
XA008-A
Abstract: FET PR 32 nichicon pr F9312
Text: Rev.2.1_00 升压 600kHz PWM 控制PWM / PFM 切换控制 内置 FET DC/DC 控制器 多芯片封装 S-83M355/83M356 系列是 由基准电压源、振荡电路、误差放大 器、相位补偿电路、PWM 控制电路(S-83M355)、PWM / PFM 切换 控制电路(S-83M356)等构成的 CMOS 升压 DC/DC 控制器与功率
|
Original
|
600kHz
S-83M355/83M356
S-83M355
S-83M356)
S-83M355
S-83M356
XB008-A
S-83M356Q50
XA008-A
FET PR 32
nichicon pr
F9312
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUMI Protection for Lithium-Ion/Lithium Polymer Batteries 1 cell MM3099 Series Protection for Lithium-Ion/Lithium Polymer Batteries (1 cell) Monolithic IC MM3099 Series April 26, 2004 Outline ts This is a protection IC developed for use with 1-serial cell lithium-ion/lithium polymer rechargeable batteries.
|
Original
|
MM3099
|
PDF
|
ENI 409
Abstract: mrc 224 24V to 3.6V opto coupler mrc 520 IRFR120 X80000 X80010 710 opto coupler resistor 10m MRC 450
Text: X80010/11/12/13 New Industry Features – – – – Programmable Power Sequencing modes Battery backup mode Hardshort retry Quad voltage enable inputs Hot Swap and Power Sequence Controller APPLICATIONS • Hot swap controller — Overvoltage and undervoltage protection
|
Original
|
X80010/11/12/13
-110V
ENI 409
mrc 224
24V to 3.6V opto coupler
mrc 520
IRFR120
X80000
X80010
710 opto coupler
resistor 10m
MRC 450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> pRÖ-Vn w>»'5n!>“ * M GFC42V6472A rV .;fvc^'on arS wc 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION TheM G FC 42V6472Aisan internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2
|
OCR Scan
|
GFC42V6472A
42V6472Aisan
|
PDF
|
microwave fet
Abstract: No abstract text available
Text: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure
|
OCR Scan
|
TGF1350-SCC
11-dB
TGF1350-SCC
MS/402
microwave fet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS BTS611 TWO CHANNEL PRO FET D escrip tion PR O FET R an in telligen t p o w e r switch w ith in tegrated Two independent high-side switches Overtem perature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection
|
OCR Scan
|
BTS611
|
PDF
|
|
|
SGM5102F
Abstract: e9024 lD-10mA
Text: SONY C O R P / C O M P O N E N T PR OD S 0302303 0003101 T « S O N Y MTE D SGM5102F SONY. GaAs N-chanpel Microwave MES FET Description The SGM5102F is an N-channel GaAs ME$ FET designed for low noise amplifiers from C to Ku bands. SGM5102F-T6 is for taping.
|
OCR Scan
|
00D3101
SGM5102F
SGM5102F
SGM5102F-T6
QD03103
SGMS102F
T-31-25
e9024
lD-10mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGS8122-SCC 8- TO 11-GHz SPDT FET SWITCH AP PR O VAL 5074 • 0.9-dB Typical Insertion Loss • 40-dB Typical Isolation at 9 GHz • 1.5:1 Typical Input SWR at Midband, 1.4:1 Typical Output SWR at Midband
|
OCR Scan
|
TGS8122-SCC
11-GHz
40-dB
7018x0
7112x0
|
PDF
|
T572S
Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Text: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain
|
OCR Scan
|
3fl23fl3
3SK147
800MHz
T572S
tv sony 1435
J50 O 26
dual-gate
17458
|
PDF
|
3SK164
Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Text: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,
|
OCR Scan
|
3SK164/-M
3SK164
3SK164-M
450MHz
880MHz
2000MHz
UV 615 TUNER
tuner uv 915 e
tv sony 1435
tuner uv 915
TA 7332
tuner uv 615
dual-gate
3539 sony
|
PDF
|
PROFET-. Semiconductor Group
Abstract: Q67060 650P BTS650P Q67060-S6308-A2 INV55
Text: S IE M E N S PR O FET BTS650P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Sum m ary O vervoltage protection Output clamp Operating voltage On-state resistance Overload protection Current limitation
|
OCR Scan
|
BTS650P
220AB/7,
E3180
E3180A
Q67060-S6308-A4
1998-Nov
PROFET-. Semiconductor Group
Q67060
650P
Q67060-S6308-A2
INV55
|
PDF
|
TL 130 0837
Abstract: No abstract text available
Text: TGS8250-SCC DC TO 18-GHz SPDT FET SWITCH AP PR O VAL 5026 • 2-dB Typical Insertion Loss • 39-dB Typical Isolation Across Band • 2-ns Rise/Fall Time • 50-|jA Typical Current Consumption With Control Voltage of - 7 V, 0 V • Size: 1,8034x1,2700x0,1016 mm
|
OCR Scan
|
TGS8250-SCC
18-GHz
39-dB
8034x1
2700x0
TL 130 0837
|
PDF
|
Untitled
Abstract: No abstract text available
Text: t 67C 00233 T? 4613303 HUGHES AIRCRAFT CO* HUGHES-, MICROWAVE PRDTS D* 7 ~ 3 9 - G S ~ □□□□233 fl | G aA sFET PR OD U CTS DESCRIPTION Hughes model number C2421H-1300 and C2422H-1300 are single cell and dual cell 13 GHz broadband GaAs power FET chips mounted on internally matched chip carriers. The
|
OCR Scan
|
C2421H-1300
C2422H-1300
50-ohm
ou2421H-1300
C2422H-1300
025x0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGS8704-SCC DC TO 6-GHz FET SWITCH AP PR O VAL 5026 • Absorptive Topology • 1.2-dB Insertion Loss and 45-dB Isolation at Midband • 1.3:1 Input SWR and 1.2:1 Output SWR at Midband • Greater Than 0.5-W Input Power at 1-dB Compression • Size: 1,092 x 0,990 x 0,152 mm
|
OCR Scan
|
TGS8704-SCC
45-dB
lnstrumentsTGS8704-SCC
15-dB
TGS8704-SCC
|
PDF
|
FT6110D
Abstract: FT6110
Text: January 1990 Edition 1.1 C P FUJITSU PR O D U C T P R O F IL E - FT6110, FT6110D Power MOS FET Arrays Silicon N-channel Enhancement Mode Power M O S F E T Arrays A B S O L U T E M A X IM U M R A T IN G S Rating <Ta=25°C Drain Source Voltage Value V Dss
|
OCR Scan
|
FT6110,
FT6110D
FT6110D
FT6110
|
PDF
|
icl7644
Abstract: No abstract text available
Text: ICL7644, ICL7645 ÌCL7646, ICL7647 H A R R IS S E M I C O N D U C T O R Low Voltage Step-Up Converters May 1992 Features Description • +5V at 40mA From a 1.5V Source The ICL7644, ICL7645 and ICL7646 are low power fixed +5V output step-up DC-DC converters designed for
|
OCR Scan
|
ICL7644,
ICL7645
CL7646,
ICL7647
ICL7645
ICL7646
ICL7647,
icl7644
|
PDF
|
