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    FET N-CHANNEL TRANSISTOR 250V DS Search Results

    FET N-CHANNEL TRANSISTOR 250V DS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    FET N-CHANNEL TRANSISTOR 250V DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


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    PDF CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet

    MOS FET SOT-223

    Abstract: sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET
    Text: CPC5603C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings


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    PDF CPC5603C OT-223 CPC5603C DS-CPC5603C-R01 MOS FET SOT-223 sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET

    Ps720c

    Abstract: PS9303 PS256D1 PS9305 wy 636 transistor PS2381 PS9306 IGBT ac switch in SSR PS9317 PART NUMBERING SYSTEM FOR RENESAS IC
    Text: O P T O C O U P L E R S + S O L I D S TAT E R E L AY S 2011 www.cel.com California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Business Division of Renesas Electronics Corporation CSDBD . These


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    CPC5621A

    Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
    Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance


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    PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R03 CPC5621A CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet

    MOS FET SOT-223

    Abstract: MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet
    Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance


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    PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R02 MOS FET SOT-223 MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    lm2402t

    Abstract: Diode D25 lm2402 crt monitor PCB LAYOUT crt monitor DRIVER BOARD PCB LAYOUT tektronix CRT troubleshooting guide self resonant driver LM2202 P6201 lm24* crt driver 1600
    Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a


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    PDF LM2402 LM2402 O-220 LM2202 lm2402t Diode D25 crt monitor PCB LAYOUT crt monitor DRIVER BOARD PCB LAYOUT tektronix CRT troubleshooting guide self resonant driver P6201 lm24* crt driver 1600

    crt monitor PCB LAYOUT

    Abstract: ns crt driver LM2202 LM2402 P6201 signal path designer
    Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a


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    PDF LM2402 LM2402 O-220 LM2202 crt monitor PCB LAYOUT ns crt driver P6201 signal path designer

    smd transistor pk1

    Abstract: pico fuse color code
    Text: AN368 Application Note Design Guide for a CS1630/31 2-Channel TRIAC Dimmable SSL Circuit 1 Overview of the CS1630 The CS1630 is a high-performance offline AC /DC LED driver for dimmable and high color rendering index CRI LED replacement lamps and luminaires. It features Cirrus Logic’s proprietary digital dimmer compatibility control


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    PDF AN368 CS1630/31 CS1630 CS1630 120VAC OT-23 R0603 smd transistor pk1 pico fuse color code

    LM2402

    Abstract: crt monitor PCB LAYOUT LM2202 P6201 Diode D25 8 CHANNEL ELECTRONIC CROSSOVER schematic DIAGRAM signal path designer
    Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a


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    PDF LM2402 LM2402 O-220 LM2202 crt monitor PCB LAYOUT P6201 Diode D25 8 CHANNEL ELECTRONIC CROSSOVER schematic DIAGRAM signal path designer

    fet N-Channel transistor 250V DS

    Abstract: No abstract text available
    Text: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s 1) Lowon-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Voss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.


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    PDF 2SK2715 fet N-Channel transistor 250V DS

    MP6101

    Abstract: toshiba mp6101
    Text: MP6101 TOSHIBA T O S H IB A P O W E R M O S FET M O D U LE SILICON N C H A N N EL M O S TYPE tt-MOS FET 6 IN 1 MPK1 n1 • v a ■ ■ INDUSTRIAL APPLICATIONS Unit in mm HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. M O TO R C O NTRO L APPLICA TIO N S.


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    PDF MP6101 150ns MP6101 toshiba mp6101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER • O utput Power Po^lOOW Min. • Drain Efficiency 7D = 70%(Typ.) • Frequency f= 230MHz M A XIM U M RATINGS (Tc = 25°C)


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    PDF 2SK1028 230MHz 4700pF 000pF

    VHF TV BROADCAST TRANSMITTER

    Abstract: 2SK1028 capacitor variable 5 - 30pf variable capacitor 30pf variable capacitor capacitor variable ceramic el wire 230MHZ
    Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po^lOOW Min. Drain Efficiency r/T) = 7Q% Frequency f= 230MHz (Typ.) M A XIM U M RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SK1028 230MHz 961001EAA2' VHF TV BROADCAST TRANSMITTER 2SK1028 capacitor variable 5 - 30pf variable capacitor 30pf variable capacitor capacitor variable ceramic el wire 230MHZ

    MP6702

    Abstract: No abstract text available
    Text: MP6702 POWER TRANSISTOR MODULE SILICON N CHANNEL MOS FET HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Drain is Isolated from Case. • 6 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode. • Low Drain-Source ON Resistance


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    PDF MP6702 MP6702

    30pf variable capacitor

    Abstract: Ceramic Capacitor 30pF VHF TV BROADCAST TRANSMITTER 5 - 30pf variable capacitor 2SK1028 variable capacitor 230MHZ VHF BROADCAST 230mH variable capacitor 47pf
    Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER • • • Output Power Drain Efficiency Frequency Po^l00W Min. 7 d ~ 70% (Typ.) f= 230MHz MAXIMUM RATINGS (Tc = 25°C)


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    PDF 2SK1028 230MHz 4700pF 000pF 10/uF, 30pf variable capacitor Ceramic Capacitor 30pF VHF TV BROADCAST TRANSMITTER 5 - 30pf variable capacitor 2SK1028 variable capacitor 230MHZ VHF BROADCAST 230mH variable capacitor 47pf

    2SK2714

    Abstract: No abstract text available
    Text: Transistors Switching 500V, 10A 2SK2714 ♦Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed •E xte rn a l dimensions (Units: mm) at Vgss = ± 3 0 V . 5) Easily designed drive circuits.


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    PDF 2SK2714 O-22QFN 2SK2714

    FOR1A

    Abstract: 2SK720A
    Text: 6427525 N E C ELECTRONICS 98D INC DE|b4275aS 'N E C W MOS GGlflTDl FIELD 18901 D 5 EFFECT TRANSISTOR EfCTBONDEVlCS ß ' W FAST SWITCHING N-CHANNEL SILICON POWER F 1 2 UJ FET Features •Suitable for switching power supplies, DC-DC converters and pulse circuits


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    PDF b42755S 2SK720A 111ii 1111HI AS-i-11 FOR1A 2SK720A

    k2341

    Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis­ in millimeters to r designed for high voltage sw itching applications.


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    PDF 2SK2341 The2SK2341 k2341 fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070

    UEI 410

    Abstract: 2SK2715
    Text: Transistors Small switching 500V, 2A 2SK2715 • Features • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5±0.2 5 1+02 r i, f V 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e guara ntee d at Voss = ± 3 0 V .


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    PDF 2SK2715 SC-63 UEI 410 2SK2715

    2SK2711

    Abstract: No abstract text available
    Text: Transistors Switching 250V, 16A 2SK2711 • F e a tu re s • E x te rn a l dim en sion s (Units: mm) 1 ) Low on-resistance. 0 + 0 .3 2) H igh-speed switching. c + 0 .3 &~0.t ü - 0 .1 3) W ide S O A (safe operating area). ¿ 3 .2 ± 0 .2 4) G a te -s o u rc e v o lta g e g u a ra n te e d


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    PDF 2SK2711 O-22QFN 00A//iS 2SK2711

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 250V, 5A 2SK2460N •Features 1 ) Low on-resistance. 2) High-speed switching. 3) Wide S O A (safe operating area). 4) Gate-source voltage guaranteed at V g s s = ±3 0 V . 5) Easily designed drive circuits. 6) Easy to use in paraliel.


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    PDF 2SK2460N -220FN

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 600V, 7A 2SK2740 • F e a tu re s • E x t e r n a l d im e n s io n s (U nits: m m ) 1) L o w o n -re s is ta n c e . 2) H ig h -s p e e d s w itc h in g . c+0.3 10.0 ±0-3 58+02 2 B -0 .1 3 ) W id e S O A (safe o p e ra tin g area).


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    PDF 2SK2740 O-220FN 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


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    PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56