FET SOT-89 N-Channel
Abstract: CPC3710C ignition module sot89 fet
Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third
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CPC3710C
220mA
OT-89
CPC3710C
DS-CPC3710C-R00A
FET SOT-89 N-Channel
ignition module
sot89 fet
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MOS FET SOT-223
Abstract: sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET
Text: CPC5603C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings
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CPC5603C
OT-223
CPC5603C
DS-CPC5603C-R01
MOS FET SOT-223
sot223 transistor pinout
MOS FET SOT-223 ON
depletion mode fet
n mosfet depletion
N-Channel Depletion-Mode MOSFET high voltage
CPC5621A
CPC5603CTR
fet N-Channel transistor 250V DS
depletion MOSFET
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Ps720c
Abstract: PS9303 PS256D1 PS9305 wy 636 transistor PS2381 PS9306 IGBT ac switch in SSR PS9317 PART NUMBERING SYSTEM FOR RENESAS IC
Text: O P T O C O U P L E R S + S O L I D S TAT E R E L AY S 2011 www.cel.com California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Business Division of Renesas Electronics Corporation CSDBD . These
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CPC5621A
Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance
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CPC5603
OT-223
CPC5603
DS-CPC5603-R03
CPC5621A
CPC5603C
CPC5603CTR
CPC5620A
CPC5622A
depletion mode fet
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MOS FET SOT-223
Abstract: MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet
Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance
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CPC5603
OT-223
CPC5603
DS-CPC5603-R02
MOS FET SOT-223
MOS FET SOT-223 ON
depletion MOSFET
CPC5603C
CPC5603CTR
CPC5620A
CPC5621A
CPC5622A
depletion mode power mosfet
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TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),
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lm2402t
Abstract: Diode D25 lm2402 crt monitor PCB LAYOUT crt monitor DRIVER BOARD PCB LAYOUT tektronix CRT troubleshooting guide self resonant driver LM2202 P6201 lm24* crt driver 1600
Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a
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LM2402
LM2402
O-220
LM2202
lm2402t
Diode D25
crt monitor PCB LAYOUT
crt monitor DRIVER BOARD PCB LAYOUT
tektronix CRT troubleshooting guide
self resonant driver
P6201
lm24* crt driver 1600
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crt monitor PCB LAYOUT
Abstract: ns crt driver LM2202 LM2402 P6201 signal path designer
Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a
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LM2402
LM2402
O-220
LM2202
crt monitor PCB LAYOUT
ns crt driver
P6201
signal path designer
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smd transistor pk1
Abstract: pico fuse color code
Text: AN368 Application Note Design Guide for a CS1630/31 2-Channel TRIAC Dimmable SSL Circuit 1 Overview of the CS1630 The CS1630 is a high-performance offline AC /DC LED driver for dimmable and high color rendering index CRI LED replacement lamps and luminaires. It features Cirrus Logic’s proprietary digital dimmer compatibility control
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AN368
CS1630/31
CS1630
CS1630
120VAC
OT-23
R0603
smd transistor pk1
pico fuse color code
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LM2402
Abstract: crt monitor PCB LAYOUT LM2202 P6201 Diode D25 8 CHANNEL ELECTRONIC CROSSOVER schematic DIAGRAM signal path designer
Text: LM2402 Monolithic Triple 3 ns CRT Driver General Description The LM2402 is an integrated high voltage CRT driver circuit designed for use in high resolution color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a
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LM2402
LM2402
O-220
LM2202
crt monitor PCB LAYOUT
P6201
Diode D25
8 CHANNEL ELECTRONIC CROSSOVER schematic DIAGRAM
signal path designer
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fet N-Channel transistor 250V DS
Abstract: No abstract text available
Text: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s 1) Lowon-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Voss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.
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2SK2715
fet N-Channel transistor 250V DS
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MP6101
Abstract: toshiba mp6101
Text: MP6101 TOSHIBA T O S H IB A P O W E R M O S FET M O D U LE SILICON N C H A N N EL M O S TYPE tt-MOS FET 6 IN 1 MPK1 n1 • v a ■ ■ INDUSTRIAL APPLICATIONS Unit in mm HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. M O TO R C O NTRO L APPLICA TIO N S.
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MP6101
150ns
MP6101
toshiba mp6101
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER • O utput Power Po^lOOW Min. • Drain Efficiency 7D = 70%(Typ.) • Frequency f= 230MHz M A XIM U M RATINGS (Tc = 25°C)
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2SK1028
230MHz
4700pF
000pF
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VHF TV BROADCAST TRANSMITTER
Abstract: 2SK1028 capacitor variable 5 - 30pf variable capacitor 30pf variable capacitor capacitor variable ceramic el wire 230MHZ
Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po^lOOW Min. Drain Efficiency r/T) = 7Q% Frequency f= 230MHz (Typ.) M A XIM U M RATINGS (Tc = 25°C) CHARACTERISTIC
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2SK1028
230MHz
961001EAA2'
VHF TV BROADCAST TRANSMITTER
2SK1028
capacitor variable
5 - 30pf variable capacitor
30pf variable capacitor
capacitor variable ceramic
el wire
230MHZ
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MP6702
Abstract: No abstract text available
Text: MP6702 POWER TRANSISTOR MODULE SILICON N CHANNEL MOS FET HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Drain is Isolated from Case. • 6 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode. • Low Drain-Source ON Resistance
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MP6702
MP6702
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30pf variable capacitor
Abstract: Ceramic Capacitor 30pF VHF TV BROADCAST TRANSMITTER 5 - 30pf variable capacitor 2SK1028 variable capacitor 230MHZ VHF BROADCAST 230mH variable capacitor 47pf
Text: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER • • • Output Power Drain Efficiency Frequency Po^l00W Min. 7 d ~ 70% (Typ.) f= 230MHz MAXIMUM RATINGS (Tc = 25°C)
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2SK1028
230MHz
4700pF
000pF
10/uF,
30pf variable capacitor
Ceramic Capacitor 30pF
VHF TV BROADCAST TRANSMITTER
5 - 30pf variable capacitor
2SK1028
variable capacitor
230MHZ VHF BROADCAST
230mH
variable capacitor 47pf
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2SK2714
Abstract: No abstract text available
Text: Transistors Switching 500V, 10A 2SK2714 ♦Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed •E xte rn a l dimensions (Units: mm) at Vgss = ± 3 0 V . 5) Easily designed drive circuits.
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2SK2714
O-22QFN
2SK2714
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FOR1A
Abstract: 2SK720A
Text: 6427525 N E C ELECTRONICS 98D INC DE|b4275aS 'N E C W MOS GGlflTDl FIELD 18901 D 5 EFFECT TRANSISTOR EfCTBONDEVlCS ß ' W FAST SWITCHING N-CHANNEL SILICON POWER F 1 2 UJ FET Features •Suitable for switching power supplies, DC-DC converters and pulse circuits
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b42755S
2SK720A
111ii
1111HI
AS-i-11
FOR1A
2SK720A
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k2341
Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis in millimeters to r designed for high voltage sw itching applications.
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2SK2341
The2SK2341
k2341
fet N-Channel transistor 250V DS
NEC k 1995 transistor
TC-8070
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UEI 410
Abstract: 2SK2715
Text: Transistors Small switching 500V, 2A 2SK2715 • Features • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5±0.2 5 1+02 r i, f V 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e guara ntee d at Voss = ± 3 0 V .
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2SK2715
SC-63
UEI 410
2SK2715
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2SK2711
Abstract: No abstract text available
Text: Transistors Switching 250V, 16A 2SK2711 • F e a tu re s • E x te rn a l dim en sion s (Units: mm) 1 ) Low on-resistance. 0 + 0 .3 2) H igh-speed switching. c + 0 .3 &~0.t ü - 0 .1 3) W ide S O A (safe operating area). ¿ 3 .2 ± 0 .2 4) G a te -s o u rc e v o lta g e g u a ra n te e d
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2SK2711
O-22QFN
00A//iS
2SK2711
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 250V, 5A 2SK2460N •Features 1 ) Low on-resistance. 2) High-speed switching. 3) Wide S O A (safe operating area). 4) Gate-source voltage guaranteed at V g s s = ±3 0 V . 5) Easily designed drive circuits. 6) Easy to use in paraliel.
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2SK2460N
-220FN
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 600V, 7A 2SK2740 • F e a tu re s • E x t e r n a l d im e n s io n s (U nits: m m ) 1) L o w o n -re s is ta n c e . 2) H ig h -s p e e d s w itc h in g . c+0.3 10.0 ±0-3 58+02 2 B -0 .1 3 ) W id e S O A (safe o p e ra tin g area).
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2SK2740
O-220FN
0Dlb713
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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