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    FET MARKING CODE Search Results

    FET MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    FET MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FC654601

    Abstract: FET MARKING CODE FET MARKING
    Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FC654601 FC654601 FET MARKING CODE FET MARKING

    fl6l5201

    Abstract: No abstract text available
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FL6L5201 fl6l5201

    FET MARKING CODE

    Abstract: FL6L5201
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FL6L5201 FET MARKING CODE FL6L5201

    FL6L5203

    Abstract: FET MARKING CODE
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF FL6L5203 FL6L5203 FET MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF FL6L5203

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview  Features  Marking Symbol: PK


    Original     		PDF 2002/95/EC) MTM86627 MTM86627

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview  Features  Marking Symbol: QK


    Original     		PDF 2002/95/EC) MTM86627A MTM86627A

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4


    Original     		PDF TT4-EA-13149 FM6L52020L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4


    Original     		PDF TT4-EA-12746 FL6L52010L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6


    Original     		PDF TT4-EA-13066 FL6L52060L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6


    Original     		PDF TT4-EA-13148 FL6L52030L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6


    Original     		PDF TT4-EA-13067 FL6L52070L UL-94

    DSKTJ05

    Abstract: transistor code book FET MARKING CODE
    Text: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


    Original     		PDF DSKTJ05 DSKTJ05 transistor code book FET MARKING CODE

    CFY 10

    Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
    Text: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration


    Original     		PDF Q62703-F106 Q62703-F107 Q62703-F108 CFY 10 gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106

    Q62702-F1372

    Abstract: No abstract text available
    Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    Original     		PDF Q62702-F1372 OT-23 Q62702-F1372

    SMD MARKING CODE 901

    Abstract: CFY 19 CFY 10 GaAs FET cfy 14
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 SMD MARKING CODE 901 CFY 19 CFY 10 GaAs FET cfy 14

    GSO05553

    Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 GSO05553 Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14

    cfy 19 siemens

    Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
    Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF VXM05208 Q62703-F106 Q62703-F107 Q62703-F108 0Qfcj75Cn cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 CFY 10

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		PDF V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a

    bf544

    Abstract: siemens fet to92 700M
    Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M

    CFY10

    Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
    Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62703-F11 fl23SbOS 00b74cà CFY10 fl235fci05 CFY10 siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens

    MARKING CODE 21S

    Abstract: 12NA50
    Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped


    OCR Scan     		PDF Q62702-F1230 OT-23 MARKING CODE 21S 12NA50

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1372 OT-23 EHT07032 300MHz