2SC4639
Abstract: No abstract text available
Text: Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications unit : mm 2196 [CPH5905] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Composite type with J-FET and NPN transistors
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ENN7177
CPH5905
CPH5905]
CPH5905
2SK3557-equivalent
2SC4639-equivalent
2SC4639
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fet junction transistor
Abstract: marking rb CPH5902 ITR10364 ITR10365 ITR10367 2SC4639
Text: Ordering number : ENN6962 CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications [CPH5902] 2.9 5 4 0.15 3 0.05 0.6 1.6 • unit : mm 2196 0.2 • Composite type with J-FET and NPN transistors
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ENN6962
CPH5902
CPH5902]
CPH5902
2SK2394-equivalent
2SC4639-equivalent
fet junction transistor
marking rb
ITR10364
ITR10365
ITR10367
2SC4639
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RF POWER amplifier 10 watt
Abstract: 8587 sm33 WiMax Configurations 6 pin DC power connector
Text: Model SM3338-43 3300-3800 MHz 20 Watt Linear Power Amplifier FOR WiMAX APPLICATIONS The SM3338-43 is a 3.3 to 3.8 GHz solid state GaAs FET amplifier designed for WiMAX applications. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit is designed for
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SM3338-43
SM3338-43
12VDC
RF POWER amplifier 10 watt
8587
sm33
WiMax Configurations
6 pin DC power connector
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Untitled
Abstract: No abstract text available
Text: Model SM3437-43 3400-3700 MHz 20 Watt Linear Power Amplifier FOR WLL APPLICATIONS The SM3437-43 is a 3.4 to 3.7 GHz solid state GaAs FET amplifier designed for the Wireless Local Loop markets. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit provides ultra-linear
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SM3437-43
SM3437-43
12VDC
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Amplifier Research rf power amplifier schematic
Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating
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2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure
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TGA8035-SCC
TGA8035
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OF100
Abstract: fast photodiode
Text: High Gain Bandwidth Product Precision FastFET Op Amp AD8067 Preliminary Technical Data FEATURES • FET Input Amplifier 0.6 pA Input Bias Current • Stable for Gains of ≥8 • High Speed 54 MHz, –3 dB Bandwidth G = +10 640 V/µs Slew Rate • Low Noise
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OT-23-5
AD8067
AD8067ART-REEL
AD8067ART-REEL7
OT-23
OT-23
OF100
fast photodiode
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AN067
Abstract: SDM-09120 AN054 GaN amplifier temperature compensation
Text: SDM-09120 Y SDM-09120(Y) Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features Available in RoHS Compliant Packaging
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SDM-09120
interDS-104211
AN054,
EDS-104211
AN067
AN054
GaN amplifier temperature compensation
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ad825
Abstract: No abstract text available
Text: Low Cost, General-Purpose High Speed JFET Amplifier AD825 APPLICATIONS CCDs Low distortion filters Mixed gain stages Audio amplifiers Photo detector interfaces ADC input buffers DAC output buffers NC 1 NC 8 AD825 –IN 2 +VS TOP VIEW 6 OUTPUT Not to Scale
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AD825
00876-E-001
16-Lead
C00876â
ad825
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SDM-09060-B1F
Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
Text: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features Available in RoHS Compliant
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SDM-09060-B1F
SDM-09060B1F
AN054,
EDS-104211
TRANSISTORS BJT with low gate voltage
NOTE-AN054
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C-Band Power GaAs FET HEMT Chips
Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and
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High Power GaAs FET
Abstract: GaAs FET 15A fll400ik-2c ED-4701 RM1101
Text: FLL400IK-2C High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.0dBm Typ. ・High Gain: G1dB=13.0dB(Typ.) ・High PAE: ηadd=45%(Typ.) ・Broad Band: 2.11~2.17GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
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FLL400IK-2C
17GHz
FLL400IK-2C
High Power GaAs FET
GaAs FET 15A
ED-4701
RM1101
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fujitsu gaas fet
Abstract: GAAS FET AMPLIFIER High Power GaAs FET Eudyna Devices ED-4701 FLL400IK-2
Text: FLL400IK-2 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=12.0dB(Typ.) ・High PAE: ηadd=46%(Typ.) ・Broad Band: 1.8~2.0GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
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FLL400IK-2
FLL400IK-2
fujitsu gaas fet
GAAS FET AMPLIFIER
High Power GaAs FET
Eudyna Devices
ED-4701
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676.160
Abstract: x-band microwave fet x-band power amplifier
Text: Product Data Sheet 8 - 10.5 GHz Power Amplifier TGA8286-EPU Key Features and Performance • • • • • • 8 to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the
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TGA8286-EPU
TGA8286-EPU
effectivel00pF
676.160
x-band microwave fet
x-band power amplifier
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Untitled
Abstract: No abstract text available
Text: TA75060P BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75060P is a J-FET input low-power operational amplifier with low input bias, offset current, and a fast slew rate. The u uuu TA75060P is pin compatible with the TA7506P.
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TA75060P
TA75060P
TA7506P.
400pA
200pA
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ta7504p
Abstract: No abstract text available
Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Ifl # Ü U U II J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75061P is a J-FET input low-power operational amplifier with low input bias, offset current and a fast slew rate. The U CJ UITT
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TA75061P
TA7504P
400pA
200pA
10kii
ta7504p
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Untitled
Abstract: No abstract text available
Text: TGA8349-SCC DC TO 14-GHz AMPLIFIER AP PR O VAL 5037 1.2:1 Input VSWR, 1.3:1 Output VSWR 11-dB Small Signal Gain 16-dBm Output Power at 1-dB Gain Compression at Midband 3.1-dB Noise Figure at Midband Size: 3,4290 x 2,2860 x 0,101 mm 0.135 x 0.090x 0.004 inch
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TGA8349-SCC
14-GHz
11-dB
16-dBm
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Untitled
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS 1430 FAST SETTLING, FET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • Settling Time to ±0.01% 10V step 200 ns Max ■ Operating Temperature. -55°C to +125°C ■ Gain Bandwidth Product. 100 MHz
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50V/ns
200nsec
600ns.
200ns.
14304HR
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LI 803-4
Abstract: TGA8035-SCC
Text: TGA8035-SCC 6- TO 18-GHz AMPLIFIER A PP R O V AL 5026 13-dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5-dBm Typical Output Power at 1-dB Gain Compression Typical Noise Figure Is 5 dB Size: 2,4892 x 2,0574 x 0,1143 mm 0.098 x 0.081 x 0.0045 in The Texas Instruments TGA8035-SCC is atwo-stage
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TGA8035-SCC
18-GHz
13-dB
GMGS010A9
LI 803-4
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dual-gate
Abstract: TGA80
Text: TGA8031-SCC 8- TO 11-GHz DUAL-GATE DRIVER AMPLIFIER AP PR O VAL 5026 0.5-Watt Output Power at 1-dB Gain Compression 36-dB Gain Dual-Gate Stages for Precise Output Power Control 14% Typical Power-Added Efficiency at 1-dB Gain Compression Size: 5,080 x 2,464 x 0,102 mm
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TGA8031-SCC
11-GHz
36-dB
dual-gate
TGA80
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TGA8035-SCC 6 to 18-GHz Frequency Range 13-dB Typical Gain # 2.2:1 Typical Input/Output SWR 12.5-dBm Typical Output Power at 1-dB Gain Compression 5-dB Typical Noise Figure # 2,4892 x 2,0574 x 0,1143 mm 0.098 x 0.081 x 0.0045 in.
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TGA8035-SCC
18-GHz
13-dB
TGA8035
18-GHz.
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TGA8035-SCC O 6to 18-GHz Frequency Range O 13-dB Typical Gain # 2.2:1 Typical Input/Output SWR % 12.5-dBm Typical Output Power at 1-dB Gain Compression O 5-dB Typical Noise Figure # 2,4892 x 2,0574 x 0,1143 mm 0.098 x 0.081 x 0.0045 in.
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TGA8035-SCC
18-GHz
13-dB
TGA8035
18-GHz.
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Untitled
Abstract: No abstract text available
Text: MPS-202201-81 100 to 2000 M H z GaAs FET Amplifier Features • +22 dBm Typical P1dB • +9.5 dBm Typical Gain • +5 Volt Bias • +35 dBm Third Order Intercept • 2:1 Maximum Input/Output VSWR • Small Size Description Outline Diagram The MPS-202201-71 is an internally matched GaAs
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MPS-202201-81
MPS-202201-71
RO-3003
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