Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0606JPE
R07DS0580EJ0200
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0100 Rev.1.00 Nov 22, 2011 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0606JPE
R07DS0580EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0606JPE
R07DS0580EJ0200
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0606JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS0580EJ0300 Rev.3.00 May 15, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0606JPE
0V-40A
R07DS0580EJ0300
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0618JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS1069EJ0100 Rev.1.00 May 15, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0618JPE
0V-40A
R07DS1069EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0618JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS1069EJ0101 Rev.1.01 Dec 25, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0618JPE
0V-40A
R07DS1069EJ0101
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6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
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NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
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transistor BD 522
Abstract: J023
Text: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at
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ILD1011M550HV
ILD1011M550HV
ILD1011M550HV-REV-NC-DS-REV-A
transistor BD 522
J023
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d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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Untitled
Abstract: No abstract text available
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 03 — 24 January 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
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BUK75
Abstract: BUK754R0-55B BUK764R0-55B
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
BUK75
BUK754R0-55B
BUK764R0-55B
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BUK75
Abstract: BUK764R0-55B
Text: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK764R0-55B
BUK75
BUK764R0-55B
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK764R0-55B
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teledyne philbrick 1020
Abstract: 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421
Text: 1421 1424 1425 1426 •WTELECYNE PHILBRICK FET Input High Performance Monolithic Op Amps The 1421, 1424, 1425 and 1426 comprise a group of general purpose, 741 pin-compatible FET op amps with specifications approaching low drift FET modules such as the 1020. For all but the 1424, typical low
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74Jechanical
teledyne philbrick 1020
1421 op
TELEDYNE PHILBRICK
teledyne 1424
teledyne 1421
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic
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GFX38V9500
FX38V
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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rf attenuator soic
Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Text: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .
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Untitled
Abstract: No abstract text available
Text: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli U n i t : m i l l i m e t e r s inches
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DD17A45
MGF1412B
12GHz
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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dc 20v motor matsua
Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Text: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized
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AN8175/S_
AN8175/S
200/420mA
700ns
D00281AE
dc 20v motor matsua
mosfet Gate Drive
dc 20v motor matsushita
AN8175
panasonic igbt and power mosfet driver
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ELECTRONIC BALLAST SK
Abstract: No abstract text available
Text: Panasonic Power MOS-FET Gate Drive IC AN8175/S • Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
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AN8175/S
AN8175/S
200/420mA
700ns
D00281AE
ELECTRONIC BALLAST SK
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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