rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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Untitled
Abstract: No abstract text available
Text: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz
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PTFA181001GL
PTFA181001GL
100-watt
PG-63248-2
PTFA181001HL
PG-64248-2
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TMK063CH
Abstract: JMK107BJ106KG VSON010V3030 LMK212BJ106M bd96
Text: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up Switching Regulator with Built-in Power MOSFET BD9641NUV No.09027EAT27 ●Description BD9641NUV is synchronous rectification 1ch boost Switching converter built in Power MOS FET. Input voltage is 2.5V～5.5V.
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BD9641NUV
09027EAT27
BD9641NUV
900kHz.
R0039A
TMK063CH
JMK107BJ106KG
VSON010V3030
LMK212BJ106M
bd96
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d683
Abstract: elna 50v BCP56 LM7805 PTFA181001GL
Text: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz
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PTFA181001GL
PTFA181001GL
100-watt
d683
elna 50v
BCP56
LM7805
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB600UNE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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SIT Static Induction Transistor
Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
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0405SC-1500M
0405SC-1500M
1500Watts,
125mA
SIT Static Induction Transistor
transistor 406 specification
Static Induction Transistor SIT
transistor sit
"silicon carbide" FET
static induction transistor
"static induction transistor"
sit transistor
electrolytic capacitor, .1uF
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
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0405SC-1500M
0405SC-1500M
1500Watts,
125mA
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Untitled
Abstract: No abstract text available
Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
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0405SC-2200M
0405SC-2200M
2200Watts,
55TW-FET
120mA
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electrolytic capacitor, .1uF
Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
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0405SC-2200M
0405SC-2200M
2200Watts,
55TW-FET
120mA
electrolytic capacitor, .1uF
electrolytic capacitor, 1uF
SIT Static Induction Transistor
capacitor 330pF ATC
"silicon carbide" FET
CHIP transistor 348
Static Induction Transistor SIT
"Static Induction Transistor"
425-450MHz
static induction transistor
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M5238
Abstract: M5238A
Text: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in
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M5238AL/P/FP
M5238
M5221
M5238A
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Untitled
Abstract: No abstract text available
Text: blE » • MM'ìbeDS D013bflb 1T2 PMS0502C — IHITM HITA CHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING (7) 54 ± 0.5 54+0.5 17) 3- 06.6 ±0.2 ■ FEATURES A • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching
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D013bflb
PMS0502C
00A//Ã
251Pulse
50502C
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2SK995
Abstract: FET 1125 3A 440V TF65
Text: Power F-MOS FET 2SK995 2SK995 Silicon N-channel Power F-MOS FET Package Dimensions •Features Unit: mm • Low ON resistance R ds on : R (on) = 1 .2 il (typ.) ds • High switching rate : tf= 6 5 n s (typ.) • No secondary breakdown • High breakdown voltage, large power
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2SK995
Vds-25V,
2SK995
FET 1125
3A 440V
TF65
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riaa preamplifier circuit diagram
Abstract: phono preamplifier circuit diagram -riaa phono preamplifier circuit diagram riaa eq riaa M5240P riaa low noise JFET Input Operational Amplifiers phono riaa
Text: MITSUBISHI CUNEAR ICs> M 5240P DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5240P is a sem iconductor integrated circuit designed as a low -noise Bi-FET operational am p lifier which adopts J-FE Ts in the input stage. The d e vice com es in a 16-pin
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M5240P
M5240P
16-pin
riaa preamplifier circuit diagram
phono preamplifier circuit diagram -riaa
phono preamplifier circuit diagram
riaa eq
riaa
riaa low noise
JFET Input Operational Amplifiers
phono riaa
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2SK99
Abstract: 2SK995 2SK9 J1L diode
Text: Power F-MOS FET 2SK995 2SK995 Silicon N-channel Power F-MOS FET Package Dimensions •Features Unit: mm • Low ON resistan ce R ds on : R 5.2max. (on) = 1 .2 il (typ.) ds 6.9min. • High switching ra te : t t = 6 5 n s (typ.) 3.2 • No secondary breakdow n
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2SK995
VDO-150V
G017124
2SK99
2SK9
J1L diode
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9520-55
T0220AB
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and
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OCR Scan
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51995P
M51995
G17T1C
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PF0012
Abstract: HITACHI PF0012
Text: PF0012 blE D • 44^205 0013b01 3Sfl ■ HIT4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 872-905 MHz ■ FEATURES • • • Include Input and Output Matching Circuit Easy to Control Output Power Superior to Stability at Load Mismatching
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PF0012
0013b01
GQ13b03
PF0012
HITACHI PF0012
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MGF4310
Abstract: 6020M f491
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4910F
GF4910F
MGF4310F
12GHz
GF4919F:
GF4916F:
12GHz
27C102P,
RV-15
MGF4310
6020M
f491
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Untitled
Abstract: No abstract text available
Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A
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OCR Scan
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2SK2796
12Otyp.
ADE-208-534
oK2796
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