BLM03AG102SN1
Abstract: No abstract text available
Text: Commercialization of High-impedance, Small Chip Ferrite Beads for Power Amplifier Modules in Wireless Mobile Communication Equipment －0603 0201 EIA Size BLM03AG102SN1－ [Body] Murata Manufacturing Co., Ltd. has commercialized a chip ferrite bead, BLM03AG102SN1, boasting the
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BLM03AG102SN1
BLM03AG102SN1,
100MHz)
100MHz
BLM03AG102SN1
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SAC 1630 L
Abstract: No abstract text available
Text: DEMO MANUAL DC1969A-A/DC1969A-B LTC4120EUD-4.2/LTC4120EUD Wireless Power Receiver and 400mA Buck Battery Charger Description Demonstration circuit DC1969A is a kit of: the DC1967A-X LTC 4120EUD demonstration board, the DC1968A basic wireless transmitter, a 35mm receiver ferrite disk, and
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DC1969A-A/DC1969A-B
LTC4120EUD-4
2/LTC4120EUD
400mA
DC1969A
DC1967A-X
4120EUD
DC1968A
com/demo/DC1969A
dc1969aabf
SAC 1630 L
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LFB095051-000
Abstract: M/UPS FERRITE
Text: Ferrite EMI Cable Cores www.lairdtech.com About Laird Laird is a global technology business focused on enabling wireless communication and smart systems, and providing components and systems that protect electronics. Laird operates through two divisions, Wireless Systems and
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PS1008-4R7
Abstract: PS1008-1R8 PS1008-820-N ps1008
Text: Yageo corporation INDUCTORS / BEADS PS Series SMD Wire Wound Chip Inductors APPLICATIONS Notebook Computers PC Cards Wireless Communication Handheld Devices OUTLINE PRODUCT IDENTIFICATION PS series is the newest shielding type ferrite wire wound chip inductors.
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PS1008
Agilent/HP4285A
Agilent/HP4291A
Agilent/HP16197A
CH502BC/HP4338B
160mm
330mm
PS1008-4R7
PS1008-1R8
PS1008-820-N
ps1008
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SBK321611T-121Y-S
Abstract: SBK160808T-121Y-S PBY321611T PBY1608 SBK321611T-700Y-S sbk451616 SBK160808T-601Y-S PBY321611T-700 SBY453215T-121Y-S sbk321611t
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS Multilayer Ferrite Chip Beads SB/PB Series [ PB Series for Large Current ] APPLICATIONS Prevention of high frequency EMI form computers, printers, VCRs, TVs, wireless telephone and other related equipment. OUTLINE PRODUCT IDENTIFICATION
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HP4284
Abstract: 16334A tablet hp 1100 marking 6R8 HP marking codes smd inductor 2r2 marking SMD CODES spia3010-1r5-n SMD 1R5 4r7. 8
Text: SMD Shielded Power Inductors – SPIA Series SPIA Series SPIA series is automatic assembly power inductor which is shielded with ferrite core. It is ideal for portal device DC-DC converter line. Features Applications RoHS Compliant. Tablet PC, Smart Phone, GPS, DSC, Wireless Module,STB,Game
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SPIA3010
SPIA3015
SPIA3020
SPIA4012
SPIA4016
SPIA4020
HP4284
16334A
tablet hp 1100
marking 6R8
HP marking codes smd
inductor 2r2
marking SMD CODES
spia3010-1r5-n
SMD 1R5
4r7. 8
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SBK160808T-110Y-S
Abstract: PBY201209T-601Y-S PBY453215T-121Y-S PBY321611T-601Y-S SBK160808T-601Y-S SBY322513T-600Y-S PBY160808T-601Y-S SBY100505T-121Y-S PBY201209T-600Y GBK160808T-800Y-S
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS Multilayer Ferrite Chip Beads SB/PB/NB/GB Series [ SB Series for General Purpose / PB Series for Large Current NB Series for Data Line, Digital Signals, etc. / GB Series for Medium Current ] APPLICATIONS Prevention of high frequency EMI form computers, printers, VCRs, TVs, wireless telephone
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uhf circulator
Abstract: circulator isolator macom MAFR-000247-000001 FR12-0009 UHF rfid antenna FR11-0001 FR11-0002 Circulators and isolators MAFRIN0
Text: M/A-COM Isolator and Circulator Products October 2007 M/A-COM Circulator and Isolator Products M/A-COM circulators and isolators have been used extensively in the RF and telecommunications industries for more than 30 years. Our industry leading products can be found in systems ranging from wireless infrastructure power amplifiers for the
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Oct07
uhf circulator
circulator
isolator macom
MAFR-000247-000001
FR12-0009
UHF rfid antenna
FR11-0001
FR11-0002
Circulators and isolators
MAFRIN0
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imd 5210
Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282SR1
MRF282ZR1
imd 5210
MJD310
RE65G1R00
MJD320
MALLORY VARIABLE CAPACITORS
GX-0300-55-22
Arlon
transistor z9
GX0300
27291SL
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100B270JCA500X
Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282SR1
MRF282ZR1
100B270JCA500X
100B390JCA500X
100B201JCA500X
GX03005522
MRF282
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microstrip
Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
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MRF282SR1
MRF282ZR1
microstrip
microstrip resistor
GX-0300-55-22
MJD320
Z7 transistor
10 watts FM transmitter
MJD310
100B201JCA500X
RE65G1R00
CDR33BX104AKWS
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MJD310
Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282SR1
MRF282ZR1
MJD310
mallory 25 uF capacitor
transistor marking z11
transistor marking z9
transistor z9
rm73b2b120jt
TRANSISTOR 3052
100B390JCA500X
MRF282
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CRF24010F
Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher
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CRF24010
CRF24010
CRF240
F24010F
CRF24010F
0592
transistor substitution chart
atc 17-33
CRF24010P
substrate 106-682
2244
PORCELAIN
127324
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mrf154 amplifier
Abstract: on 5269 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
MRF154
mrf154 amplifier
on 5269 transistor
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RF-35-0300
Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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Cha41
MRF9030MR1
RF-35-0300
9601 mosfet
9450 transistor
motorola MOSFET 935
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350 pf variable capacitor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
350 pf variable capacitor
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9601 TO 220
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
9601 TO 220
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation
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MRF177
MRF177
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Untitled
Abstract: No abstract text available
Text: Coils and Inductors Lead Wireless Power Inductors P•F Series / H•PI Series SMD type current inductors are suitable for power supply smoothing chokes, DC/DC voltage converter choke coils, and noise protection measures. P•F and H•PI Series inductors have been developed mainly for
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PI-125R5-1R2
PI-125R5-2R2
PI-125R5-3R3
PI-125R5-4R7
PI-125R5-6R8
PI-125R5-8R2
PI-125R5-100
125R5
125R5
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
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New Low Insertion Loss Circulator
Abstract: No abstract text available
Text: May 2012 New Low Insertion Loss Circulator By Dave Cruickshank and Brian Hartnett, Skyworks Solutions, Inc. The insertion loss of the output circulator of a power amplifier is critical. It is estimated that every 0.1dB of insertion loss at the power amplifier output costs >3W of RF power further up the chain. Engineering teams from Skyworks Solutions, Inc. and
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SKYFR-000782
2110MHz
2170MHz,
New Low Insertion Loss Circulator
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celular
Abstract: 8031 gps RX881
Text: SPECTRÜM CONTROL INC. Wireless Components Selection Guide INDUCTOR COMPONENTS Ferrite Chip Beads and Power Beads Ferrite Inductors Ceramic Chip Inductors Coaxial Ceramic Inductors Features / Benefits A p p lica tio n s Ky*i \\* Computers, printers, scanners, LAN & WAN
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MRF1946 equivalent
Abstract: MRF1946A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Pow er Transistors MRF1946 MRF1946A . . . designed for 12.5 volt large-signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance
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MRF1946
MRF1946A
MRF1946A
MRF1946 equivalent
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BH Rf transistor
Abstract: AN-938 AN938
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB
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StF553
MRF553
BH Rf transistor
AN-938
AN938
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