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    Abstract: No abstract text available
    Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low


    Original     		PDF FDC6312P

    FDC6312P

    Abstract: RCA 467 SSOT-6 CBVK741B019 F63TNR FDC633N FDC6312
    Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low


    Original     		PDF FDC6312P FDC6312P RCA 467 SSOT-6 CBVK741B019 F63TNR FDC633N FDC6312

    FDS6312P

    Abstract: FDC6312P
    Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low


    Original     		PDF FDC6312P FDS6312P FDC6312P