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    FDN86246 Price and Stock

    onsemi FDN86246

    MOSFET N-CH 150V 1.6A SUPERSOT3
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    DigiKey FDN86246 Digi-Reel 10,732 1
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    FDN86246 Reel 9,000 3,000
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    Avnet Americas FDN86246 Reel 20 Weeks 3,000
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    Mouser Electronics FDN86246 34,895
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    Verical FDN86246 21,084 620
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    FDN86246 1,980 12
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    Arrow Electronics FDN86246 3,000 20 Weeks 3,000
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    FDN86246 Cut Strips 1,980 20 Weeks 1
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    Newark FDN86246 Cut Tape 1
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    FDN86246 Reel 3,000
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    RS FDN86246 Bulk 2 Weeks 5
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    Future Electronics FDN86246 Reel 29 Weeks 3,000
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    Onlinecomponents.com FDN86246 3,000
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    Bristol Electronics FDN86246 225 4
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    Quest Components FDN86246 180
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    Rochester Electronics FDN86246 39,176 1
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    Richardson RFPD FDN86246 3,000
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    Avnet Asia FDN86246 20 Weeks 3,000
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    Avnet Silica FDN86246 3,000 21 Weeks 3,000
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    Chip-Germany GmbH FDN86246 570
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    Chip1Stop FDN86246 Cut Tape 592
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    Master Electronics FDN86246 3,000
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    Fairchild Semiconductor Corporation FDN86246

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    Bristol Electronics FDN86246 4
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    Quest Components FDN86246 68
    • 1 $1.645
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    • 100 $0.8225
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    Win Source Electronics FDN86246 105,200
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    Others FDN86246

    INSTOCK
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    Chip 1 Exchange FDN86246 19,500
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    FDN86246 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDN86246 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 1.6A 3SSOT Original PDF

    FDN86246 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original     		PDF FDN86246

    FDN86246

    Abstract: marking 246
    Text: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description „ Max rDS on = 261 m: at VGS = 10 V, ID = 1.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDN86246 FDN86246 marking 246

    CEP1110-PS10-200

    Abstract: TRANSISTOR N2 CPFC74NP-4251-T11 P0E70P-50L tvs diode sma MAGJACK rj45 connector 0826-1X1T-GH-F TDK ZJYS81R5 IRLML0030TRPBF MAX5974
    Text: 19-5989; Rev 0; 8/11 MAX5974E Evaluation Kit Evaluates: MAX5974E General Description The MAX5974E evaluation kit EV kit is a fully assembled and tested surface-mount circuit board featuring the MAX5974E spread-spectrum, current-mode PWM controller for Power-over-Ethernet (PoE) powered device


    Original     		PDF MAX5974E MAX5974E 200kHz CEP1110-PS10-200 TRANSISTOR N2 CPFC74NP-4251-T11 P0E70P-50L tvs diode sma MAGJACK rj45 connector 0826-1X1T-GH-F TDK ZJYS81R5 IRLML0030TRPBF MAX5974