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    FDMS3606AS Search Results

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    FDMS3606AS Price and Stock

    onsemi FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A POWER56
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    DigiKey FDMS3606AS Reel
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    FDMS3606AS Digi-Reel 1
    • 1 $2.59
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    FDMS3606AS Cut Tape 1
    • 1 $2.59
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    Avnet Americas FDMS3606AS Reel 0 Weeks, 2 Days 705
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    FDMS3606AS Reel 3,000
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    Flip Electronics FDMS3606AS 32,260
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    Flip Electronics FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A POWER56
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    DigiKey FDMS3606AS Reel 1,000
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    Rochester Electronics LLC FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A 8PQFN
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    DigiKey FDMS3606AS Bulk 254
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    Fairchild Semiconductor Corporation FDMS3606AS

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    Bristol Electronics FDMS3606AS 2,589
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    Rochester Electronics FDMS3606AS 7,184 1
    • 1 $1.14
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    • 100 $1.07
    • 1000 $0.969
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    ComSIT USA FDMS3606AS 3,000
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    FDMS3606AS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS3606AS Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL POWER56 Original PDF

    FDMS3606AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N9CC

    Abstract: FDMS3606AS 150 mh inductor
    Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3606AS FDMS3606AS N9CC 150 mh inductor

    FDMS3606AS

    Abstract: No abstract text available
    Text: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3606AS FDMS3606AS

    N9CC

    Abstract: No abstract text available
    Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3606AS N9CC