Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDME430NT Search Results

    SF Impression Pixel

    FDME430NT Price and Stock

    onsemi FDME430NT

    MOSFET N-CH 30V 6A MICROFET1.6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDME430NT Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    FDME430NT Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    FDME430NT Digi-Reel 1
    • 1 $0.59
    • 10 $0.59
    • 100 $0.59
    • 1000 $0.59
    • 10000 $0.59
    		Buy Now

    Rochester Electronics LLC FDME430NT

    MOSFET N-CH 30V 6A MICROFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDME430NT Bulk 1,268
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.24
    		Buy Now

    Fairchild Semiconductor Corporation FDME430NT

    Small Signal Field-Effect Transistor, 6A, 30V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDME430NT 34,301 1
    • 1 $0.2275
    • 10 $0.2275
    • 100 $0.2139
    • 1000 $0.1934
    • 10000 $0.1934
    		Buy Now

    FDME430NT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDME430NT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 6A MICROFET1.6 Original PDF

    FDME430NT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT

    FDME430NT

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT FDME430NT

    Untitled

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT FDME430NT