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    FDMC7672 Price and Stock

    onsemi FDMC7672

    MOSFET N-CH 30V 16.9A/20A 8MLP
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    DigiKey FDMC7672 Cut Tape 10,894 1
    • 1 $1.25
    • 10 $0.845
    • 100 $1.25
    • 1000 $0.43794
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    FDMC7672 Digi-Reel 10,894 1
    • 1 $1.25
    • 10 $0.845
    • 100 $1.25
    • 1000 $0.43794
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    FDMC7672 Reel 6,000 3,000
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    • 10000 $0.39375
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    Avnet Americas FDMC7672 Reel 22 Weeks 3,000
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    • 10000 $0.37952
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    Mouser Electronics FDMC7672 4,112
    • 1 $0.87
    • 10 $0.681
    • 100 $0.569
    • 1000 $0.438
    • 10000 $0.393
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    Newark FDMC7672 Reel 3,000
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    • 10000 $0.473
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    Onlinecomponents.com FDMC7672
    • 1 -
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    • 10000 $0.42
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    TME FDMC7672 1
    • 1 $0.799
    • 10 $0.715
    • 100 $0.567
    • 1000 $0.525
    • 10000 $0.525
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    Richardson RFPD FDMC7672 3,000
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    Avnet Asia FDMC7672 22 Weeks 3,000
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    Avnet Silica FDMC7672 23 Weeks 3,000
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    EBV Elektronik FDMC7672 24 Weeks 3,000
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    Flip Electronics FDMC7672 227
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    onsemi FDMC7672S

    MOSFET N-CH 30V 14.8A/18A 8MLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC7672S Cut Tape 2,683 1
    • 1 $1.28
    • 10 $0.861
    • 100 $1.28
    • 1000 $0.44711
    • 10000 $0.44711
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    FDMC7672S Digi-Reel 2,683 1
    • 1 $1.28
    • 10 $0.861
    • 100 $1.28
    • 1000 $0.44711
    • 10000 $0.44711
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    FDMC7672S Reel 3,000
    • 1 -
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    • 10000 $0.4035
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    Avnet Americas FDMC7672S Reel 0 Weeks, 2 Days 2,084
    • 1 -
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    • 10000 $0.42912
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    FDMC7672S Reel 16 Weeks 3,000
    • 1 -
    • 10 -
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    • 10000 $0.38892
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    Mouser Electronics FDMC7672S 4,654
    • 1 $1.08
    • 10 $0.861
    • 100 $0.601
    • 1000 $0.447
    • 10000 $0.403
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    Newark FDMC7672S Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.485
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    Onlinecomponents.com FDMC7672S
    • 1 -
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    • 10000 $0.43
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    TME FDMC7672S 1
    • 1 $0.757
    • 10 $0.63
    • 100 $0.504
    • 1000 $0.473
    • 10000 $0.473
    		Get Quote
    Richardson RFPD FDMC7672S 3,000
    • 1 -
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    • 10000 $0.4
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    Avnet Asia FDMC7672S 16 Weeks 3,000
    • 1 -
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    • 10000 $0.41385
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    Avnet Silica FDMC7672S 17 Weeks 3,000
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    EBV Elektronik FDMC7672S 18 Weeks 3,000
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    Flip Electronics FDMC7672S 2,478
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    Rochester Electronics LLC FDMC7672

    MOSFET N-CH 30V 16.9A/20A 8MLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC7672 Bulk 660
    • 1 -
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    • 1000 $0.46
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    onsemi FDMC7672_F125

    MOSFET N-CH 30V 16.9A/20A 8MLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC7672_F125 Bulk
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    onsemi FDMC7672S-F126

    MOSFET N-CH 30V 14.8A 8MLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC7672S-F126 Reel
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    FDMC7672S-F126 Cut Tape
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    FDMC7672S-F126 Digi-Reel 1
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.91
    • 10000 $0.91
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    Find more FDMC7672 price and stock on Findchips.com

    FDMC7672 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC7672 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF
    FDMC7672S Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF
    FDMC7672S_F126 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V Original PDF
    FDMC7672S-F126 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V Original PDF

    FDMC7672 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDMC7672

    Abstract: MO-229
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672 MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672

    FDMC7672S

    Abstract: No abstract text available
    Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well


    Original     		PDF FDMC7672S FDMC7672S

    FDMC7672S

    Abstract: MO-229
    Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description „ Max rDS on = 6.0 m: at VGS = 10 V, ID = 14.8 A This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially


    Original     		PDF FDMC7672S FDMC7672S MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description „ Max rDS on = 6.0 m: at VGS = 10 V, ID = 14.8 A This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially


    Original     		PDF FDMC7672S FDMC7672S

    FDMC7672

    Abstract: MO-229
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672 MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well


    Original     		PDF FDMC7672S FDMC7672S

    v14431

    Abstract: FDMC7672 MO-229 MLP08S
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672 v14431 MO-229 MLP08S

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description „ Max rDS on = 5.7 mΩ at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description „ Max rDS on = 5.7 mΩ at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672

    TF214

    Abstract: mo-229 pad layout FDMC7672S
    Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.1 m: Features General Description „ Max rDS on = 6.1 m: at VGS = 10 V, ID = 14.8 A This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially


    Original     		PDF FDMC7672S FDMC7672S TF214 mo-229 pad layout

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description „ Max rDS on = 5.7 mΩ at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672

    TPS51225

    Abstract: No abstract text available
    Text: TPS51225, TPS51225A, TPS51225B, TPS51225C SLUSAV0 – JANUARY 2012 www.ti.com Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225A, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225A, TPS51225B, TPS51225C 100-mA, TPS51225/A/B/C TPS51225

    Untitled

    Abstract: No abstract text available
    Text: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7664 FDMC7664 FDMC7672

    Untitled

    Abstract: No abstract text available
    Text: TPS51225, TPS51225A, TPS51225B, TPS51225C SLUSAV0 – JANUARY 2012 www.ti.com Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225A, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225A, TPS51225B, TPS51225C 100-mA, TPS51225/A/B/C

    tps51225

    Abstract: No abstract text available
    Text: TPS51225, TPS51225A, TPS51225B, TPS51225C SLUSAV0 – JANUARY 2012 www.ti.com Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225A, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225A, TPS51225B, TPS51225C 100-mA, TPS51225/A/B/C tps51225

    TPS51225

    Abstract: No abstract text available
    Text: TPS51225, TPS51225B, TPS51225C www.ti.com SLUSAV0A – JANUARY 2012 – REVISED JUNE 2012 Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225B, TPS51225C 100-mA, TPS51225/B/C TPS51225

    tps51225

    Abstract: 10SW28
    Text: TPS51225, TPS51225A, TPS51225B, TPS51225C SLUSAV0 – JANUARY 2012 www.ti.com Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225A, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225A, TPS51225B, TPS51225C 100-mA, TPS51225/A/B/C tps51225 10SW28

    Untitled

    Abstract: No abstract text available
    Text: TPS51225, TPS51225A, TPS51225B, TPS51225C SLUSAV0 – JANUARY 2012 www.ti.com Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225A, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225A, TPS51225B, TPS51225C 100-mA, TPS51225/A/B/C

    1225C ti

    Abstract: 1225C 1225b ti MAX326 "1225C" TPS51225CRUKR 1225c ti 28 UDG-12008 1225B
    Text: TPS51225, TPS51225B, TPS51225C www.ti.com SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012 Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225B, TPS51225C 100-mA, TPS51225/B/C 1225C ti 1225C 1225b ti MAX326 "1225C" TPS51225CRUKR 1225c ti 28 UDG-12008 1225B

    Untitled

    Abstract: No abstract text available
    Text: TPS51225, TPS51225B, TPS51225C www.ti.com SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012 Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225B, TPS51225C 100-mA, TPS51225/B/C

    1225C ti

    Abstract: No abstract text available
    Text: TPS51225, TPS51225B, TPS51225C www.ti.com SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012 Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs Check for Samples: TPS51225, TPS51225B, TPS51225C FEATURES APPLICATIONS 1 • • Input Voltage Range: 5.5 V to 24 V


    Original     		PDF TPS51225, TPS51225B, TPS51225C 100-mA, TPS51225/B/C 1225C ti