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    FDB86135 Search Results

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    FDB86135 Price and Stock

    onsemi FDB86135

    MOSFET N-CH 100V 75A D2PAK
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    FDB86135 Reel 2,400 800
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    Mouser Electronics FDB86135 16,838
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    Verical FDB86135 287 2
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    Arrow Electronics FDB86135 Cut Strips 287 22 Weeks 1
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    Newark FDB86135 Reel 800
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    Onlinecomponents.com FDB86135
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    Richardson RFPD FDB86135 800
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    Avnet Asia FDB86135 22 Weeks 800
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    Chip-Germany GmbH FDB86135 278
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    EBV Elektronik FDB86135 24 Weeks 800
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    Wuhan P&S FDB86135 453 1
    • 1 $8.37
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    • 100 $5.34
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    FDB86135 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB86135 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V D2PAK Original PDF

    FDB86135 Datasheets Context Search

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    FDB86135

    Abstract: No abstract text available
    Text: FDB86135 tm N-Channel PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB86135 FDB86135

    Untitled

    Abstract: No abstract text available
    Text: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDB86135

    Untitled

    Abstract: No abstract text available
    Text: FDB86135 N-Channel PowerTrench MOSFET tm 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDB86135