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Samtec Inc MTSW-110-08-F-D-059 CONN HEADER VERT 20POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTSW-110-08-F-D-059	Bulk			1	1 $2.06 10 $2.06 100 $2.06 1000 $2.06 10000 $2.06	Buy Now
Avnet Americas	MTSW-110-08-F-D-059	Bulk			1	1 $1.5 10 $1.5 100 $1.15 1000 $0.92 10000 $0.92	Buy Now
Mouser Electronics	MTSW-110-08-F-D-059					1 $1.5 10 $1.5 100 $1.15 1000 $0.92 10000 $0.8	Get Quote
Newark	MTSW-110-08-F-D-059	Bulk			1	1 $2.75 10 $2.75 100 $1.88 1000 $0.918 10000 $0.897	Buy Now
Master Electronics	MTSW-110-08-F-D-059					1 - 10 - 100 $1.532 1000 $1.043 10000 $0.709	Buy Now

Sager	MTSW-110-08-F-D-059				1	1 $1.5 10 $1.5 100 $1.15 1000 $0.92 10000 $0.8	Buy Now
Samtec Inc MTMM-107-04-F-D-059 VARIABLE POST HEIGHT HEADER STRI Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTMM-107-04-F-D-059	Bulk			1	1 $2.13 10 $2.13 100 $2.13 1000 $2.13 10000 $2.13	Buy Now
Avnet Americas	MTMM-107-04-F-D-059	Bulk			1	1 $1.39 10 $1.39 100 $1.11 1000 $0.9 10000 $0.9	Buy Now
Mouser Electronics	MTMM-107-04-F-D-059					1 $1.39 10 $1.39 100 $1.11 1000 $0.9 10000 $0.79	Get Quote
Master Electronics	MTMM-107-04-F-D-059					1 - 10 - 100 $1.581 1000 $1.043 10000 $0.653	Buy Now
Sager	MTMM-107-04-F-D-059				1	1 $2.13 10 $2.13 100 $1.48 1000 $0.97 10000 $0.85	Buy Now
Samtec Inc MTSW-105-07-F-D-059-RA CONN HEADER R/A 10POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTSW-105-07-F-D-059-RA	Bulk			1	1 $1.28 10 $1.28 100 $1.28 1000 $1.28 10000 $1.28	Buy Now
Avnet Americas	MTSW-105-07-F-D-059-RA	Bulk			1	1 $0.83 10 $0.83 100 $0.62 1000 $0.49 10000 $0.49	Buy Now
Mouser Electronics	MTSW-105-07-F-D-059-RA					1 $0.83 10 $0.83 100 $0.62 1000 $0.49 10000 $0.27	Get Quote
Master Electronics	MTSW-105-07-F-D-059-RA					1 - 10 - 100 $0.9808 1000 $0.5821 10000 $0.3913	Buy Now
Sager	MTSW-105-07-F-D-059-RA				1	1 $1.28 10 $1.28 100 $0.8 1000 $0.52 10000 $0.47	Buy Now
Samtec Inc MTSW-220-08-F-D-059 Conn Unshrouded HDR 40 POS 5.08mm Solder ST Through Hole - Bulk (Alt: MTSW-220-08-F-D-05) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MTSW-220-08-F-D-059	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MTSW-220-08-F-D-059					1 $6.81 10 $6.81 100 $3.91 1000 $3.44 10000 $2.59	Buy Now
Sager	MTSW-220-08-F-D-059					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors VS-FD059U06A6P VS-FD059U06A6P DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ES Components	VS-FD059U06A6P		4,961			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FD059 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FD059H06A5B Abstract: 31-2 MIL-HDBK-263 S1025 Text: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	PDF	0512J FD059H06A5B 12-Mar-07 FD059H06A5B 31-2 MIL-HDBK-263 S1025
FD059 Abstract: No abstract text available Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	PDF	0513J FD059U06A5B FD059
FD059U06A5B Abstract: fd059u06 MIL-HDBK-263 S1025 FD059 Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	PDF	0513J FD059U06A5B 12-Mar-07 FD059U06A5B fd059u06 MIL-HDBK-263 S1025 FD059
Untitled Abstract: No abstract text available Text: Bulletin I0513J 02/03 FD059U06A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.499 ± 0.01 (59.01 ± 0.4)	Original	PDF	I0513J FD059U06A5. S1025 O-220 059x059
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5 Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
Untitled Abstract: No abstract text available Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.
SL4B Abstract: FD059 Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059
Untitled Abstract: No abstract text available Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.
igbt 500V 22A Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
AN-994 Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1
Untitled Abstract: No abstract text available Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.
Untitled Abstract: No abstract text available Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994.
Untitled Abstract: No abstract text available Text: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5.
C-150 Abstract: IRGS4B60K IRGSL4B60K Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K

Untitled Abstract: No abstract text available Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994.
Untitled Abstract: No abstract text available Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.
C-150 Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
C-150 Abstract: IRGS4B60K IRGSL4B60K Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1
Untitled Abstract: No abstract text available Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994.
AN-994 Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1
AN-994 Abstract: C-150 igbt 400V 40A Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A

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FD059 Price and Stock

Samtec Inc MTSW-110-08-F-D-059

Samtec Inc MTMM-107-04-F-D-059

Samtec Inc MTSW-105-07-F-D-059-RA

Samtec Inc MTSW-220-08-F-D-059

Vishay Semiconductors VS-FD059U06A6P

FD059 Datasheets Context Search

FD059H06A5B

FD059

FD059U06A5B

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C-150

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SL4B

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igbt 500V 22A

AN-994

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C-150

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C-150

C-150

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AN-994

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