FCSI1199M200 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
FLL800IQ-2C Abstract: No abstract text available Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL800IQ-2C FLL800IQ-2C FCSI1199M200
FLL800IQ-2C Abstract: No abstract text available Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL800IQ-2C FLL800IQ-2C FCSI1199M200
FLM3439-4F Abstract: No abstract text available Text: FLM3439-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM3439-4F -46dBc FLM3439-4F FCSI1199M200
FLL600IQ-2C Abstract: No abstract text available Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL600IQ-2C FLL600IQ-2C FCSI1199M200
FLL1500IU-2C Abstract: No abstract text available Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL1500IU-2C FLL1500IU-2C FCSI1199M200
12R05 Abstract: imt 901 FLL1500IU-2C Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL1500IU-2C FLL1500IU-2C FCSI1199M200 12R05 imt 901
FLM3439-25F Abstract: No abstract text available Text: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM3439-25F -46dBc FLM3439-25F FCSI1199M200
FLL600IQ-2C Abstract: Fujitsu GaAs FET Amplifier Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that	Original	PDF	FLL600IQ-2C FLL600IQ-2C FCSI1199M200 Fujitsu GaAs FET Amplifier
FLM3439-12F Abstract: No abstract text available Text: FLM3439-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM3439-12F -46dBc FLM3439-12F FCSI1199M200
FLM3439-18F Abstract: No abstract text available Text: FLM3439-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω	Original	PDF	FLM3439-18F -46dBc FLM3439-18F FCSI1199M200