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    FMM1103VJ

    Abstract: FUJITSU MICROWAVE
    Text: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available


    Original     		PDF FMM1103VJ SMT-10 FMM1103VJ FCSI0299M200 FUJITSU MICROWAVE

    Fujitsu GaAs FET Amplifier design

    Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 Fujitsu GaAs FET Amplifier design FLL1500 Fujitsu GaAs FET Amplifier

    FLL120

    Abstract: No abstract text available
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 FLL120

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier

    fujitsu power amplifier GHz

    Abstract: FLL1200IU-3
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 fujitsu power amplifier GHz

    Untitled

    Abstract: No abstract text available
    Text: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.


    OCR Scan     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design FLL1500IU-2A fujitsu gaas fet L-band
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet L-band

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet