Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11424-1E 16 Mbit Mobile FCRAMTM MB82D01181E-60L New released • FEATURES • Asynchronous SRAM interface • Byte Control with LB, UB pin Low Power Consumption Power Down Mode Chip/Wafer Business SRAM compatible pinout FBGA
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NP05-11424-1E
MB82D01181E-60L
MB82D01181E
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Untitled
Abstract: No abstract text available
Text: Graphic Display Controller D 0:31 HOST BUS INTERFACE PCI/Host Interface A(0:23) Pixel Bus MB86276 Video Input and Scaler Display Controller MD(0:31) 64MByte SDRAM or FCRAM External Memory Controller YUV/RGB Digital RGB 2D Rendering Engine MA(0:14) Description
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MB86276
64MByte
MB86276
MB86296
32-bit
16-bit
GDC-FS-21148-2/2006
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11414-1E 32Mbit Mobile FCRAM 1.8V, Fast Page Mode MB82DPS02183B-80/-80L/-85/-85L New released • FEATURES • • Asynchronous SRAM interface 8 Words Page Address Access Capability _ • • • • • •
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NP05-11414-1E
32Mbit
MB82DPS02183B-80/-80L/-85/-85L
16Mbit
MB82DPS02183B
16BIT
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Untitled
Abstract: No abstract text available
Text: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View
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MB82DPS02183B
MB82D01160
MB82D01161,
16M-bit
128Mb
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TC59LM836DKB
Abstract: TC59LM836DKB-33
Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
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TC59LM836DKB-33
288Mbits
152-WORDS
36-BITS
TC59LM836DKB
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F0110
Abstract: 004C2000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •
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MB82D01161-85/-85L/-90/90L
576-WORD
MB82D01161
16-bit
16bit
90nany
F0110
F0110
004C2000
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MB82D01181E
Abstract: MB82D01181E-60L
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11424-4E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L • DESCRIPTION MB82D01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access
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DS05-11424-4E
MB82D01181E-60L
MB82D01181E
16-bit
F0607
MB82D01181E-60L
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11406-1E MEMORY CMOS 2 x 512 K × 16 Bit Single Data Rate I/F FCRAMTM Extended Temp.Version Consumer/Embedded Application Specific Memory MB81E161622-10-X/-12-X CMOS 2-Bank × 524,288-Word × 16 Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate
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DS05-11406-1E
MB81E161622-10-X/-12-X
288-Word
MB81E161622
16-bit
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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DQR10
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11409-1E MEMORY CMOS 2 x 512K × 32-BIT× 2-PART DUAL PART SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB811L646449-12/18 • DESCRIPTION The Fujitsu MB811L646449 is a Dual Part Single Data Rate Interface Fast Cycle Random Access Memory
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DS05-11409-1E
32-BIT×
MB811L646449-12/18
MB811L646449
32-bit
MB811L646449
DQR10
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11410-2E MEMORY CMOS 2 x 512K × 32-BIT SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB811L323229-12/18 • DESCRIPTION The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory FCRAM*
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DS05-11410-2E
32-BIT
MB811L323229-12/18
MB811L323229
32-bit
F0205
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11407-3E MEMORY CMOS 2 x 512 K × 16 BIT / 2 × 256 K × 32 BIT SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB81ES171625/173225-12/-15 • DESCRIPTION The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory FCRAM* containing 16,777,216
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DS05-11407-3E
MB81ES171625/173225-12/-15
MB81ES171625/173225
F0306
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f0602
Abstract: MB82DS01181E MB82DS01181E-70LWT-A
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-1E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A • DESCRIPTION MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access
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DS05-11434-1E
MB82DS01181E-70L-A
MB82DS01181E
16-bit
F0602
f0602
MB82DS01181E-70LWT-A
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32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash
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DS05-50208-1E
MB84LD23381EJ-10
101-ball
MB84VD23381EJ-90
32 KB SRAM
DS05-50208-1E
SWITCH SA125
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_W Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM
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MB84LD22382EF/LD22383EF/LD22384EF-12
MB84LD22392EF/LD22393EF/LD22394EF-12
71-ball
F0006
SA70
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32 KB SRAM
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash
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DS05-50209-2E
MB84VD23381EJ-90
32 KB SRAM
MBM29DL640E
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71PIN
Abstract: MB82DBS04163C MB82DBS04163C-70L
Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11425-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS04163C-70L New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)
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NP05-11425-2E
MB82DBS04163C-70L
71pin
MB82DBS04163C
MB82DBS04163C
MB82DBS04163C-70L
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MB82D01160-90LPBT
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01160-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION
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MB82D01160-90/90L
576-WORD
MB82D01160
16-bit
MB82D01160-90LPBT
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EF/VD22387EF/VD22388EF-90 MB84VD22396EF/VD22397EF/VD22398EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM
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MB84VD22386EF/VD22387EF/VD22388EF-90
MB84VD22396EF/VD22397EF/VD22398EF-90
71-ball
F0006
SA70
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MB84VR5E3J1A1
Abstract: No abstract text available
Text: 63 &,$/ ($785( 6(&7,21 0%95(-$0%/5(-$ 3-Chip Stacked MCP with 64 M-Bit NOR-Type Flash Memory,16 M-Bit Mobile FCRAM , and 4 M-Bit SRAM: MB84VR5E3J1A1/ MB84LR5E3J1A1
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MB84VR5E3J1A1/
MB84LR5E3J1A1
MB84VR5E3J1A1
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11431-2E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L • DESCRIPTION The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
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DS05-11431-2E
MB82DP04183C-65L
MB82DP04183C
16-bit
F0603
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate
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DS05-11402-1E
MB81P643287-50/-60
144-WORD
MB81P643287
32-bit
F0005
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
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