FBGA48C
Abstract: FBGA48 11015
Text: FBGA48C LSI Assembly Units : mm • FBGA48C (CSP TYPE1) φ0.45±0.05 0.08 A B 0.35±0.1 0.6 1.2Max. P=0.8x6 G F E D C B A 7.0±0.1 6.7 7.0±0.1 6.7 0.8 B 1.1±0.15 1Pin MARK P=0.8×6 1.1±0.15 (0.1) 1 2 3 4 5 6 7 S A 0.1 S ∗ The contents described herein are subject to change without notice.
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FBGA48C
FBGA48C
FBGA48
11015
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FBGA-484
Abstract: A54SX32A-CQ256 actel FG484 package mechanical drawing B22 filament base CQ256 land pattern QFP 208 SX72 A54SX32A-FG484 silicone paste p4 FG484
Text: Actel CQFP – FBGA484 Adapter Boards SI-SX32-ACQ256SFG484 and SI-SX72-ACQ256SFG484 Contents 1). Introduction 2). Appendix A – SI-SX32-ACQ256SFG484 Mechanical Drawing and Assembly instructions 3). Appendix B – SI-SX72-ACQ256SFG484 Mechanical Drawing and Assembly
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FBGA484
SI-SX32-ACQ256SFG484
SI-SX72-ACQ256SFG484)
SI-SX72-ACQ256SFG484
CQ256
FG484
SI-SX72ACQ256SFG484)
FBGA-484
A54SX32A-CQ256
actel FG484 package mechanical drawing
B22 filament base
land pattern QFP 208
SX72
A54SX32A-FG484
silicone paste p4
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Untitled
Abstract: No abstract text available
Text: TC51WHM716AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM716AXBN is a 134,217,728-bit pseudo static random access memory PSRAM organized as 8,388,608 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
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TC51WHM716AXBN70
608-WORD
16-BIT
TC51WHM716AXBN
728-bit
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M29W400B
Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
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M29W400T
M29W400B
512Kb
256Kb
M29W400T
M29W400B
M29W400BT
M29W400BB
FBGA48
M29W400
M29W400BB
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HYE18P16161AC
Abstract: No abstract text available
Text: Data Sheet, V2.2, July 2004 HYE18P16161AC-70/L70 HYE18P16161AC-85/L85 16M Asynchronous/Page CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-7-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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HYE18P16161AC-70/L70
HYE18P16161AC-85/L85
HYE18P16161AC
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
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Untitled
Abstract: No abstract text available
Text: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full
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HY29LV400
8/256K
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Untitled
Abstract: No abstract text available
Text: ¡ Semiconductor MS52C1162A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1162A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable
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MS52C1162A
536-Word
16-Bit
072-Word
576-Word
152-Word
MS52C1162A
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Untitled
Abstract: No abstract text available
Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V
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M68AR024D
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical
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M29W160BT
M29W160BB
TSOP48
FBGA48
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QFP-240
Abstract: QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80
Text: New products CG61P CMOS Gate Array CG61P Series This series features the first gate array incorporating an analog PLL. Four frames are available in a capacity range from 70K to 300K: two types are provided for analog PLLs of a low-frequency version 90 to 160 MHz ;
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CG61P
CG61P
48-pin)
BCC48
FBGA48
QFP-240
QFP240
CG61304P
LQFP100
LQFP120
LQFP144
LQFP176
LQFP48
LQFP64
LQFP80
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taiyo PSR4000
Abstract: Shipping Trays kostat 10 x 10 nitto hc100 Kostat tray PSR4000 aus5 EPAK EPAK TRAY JEDEC Kostat PSR4000 aus5
Text: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2
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MS52C1161A
Abstract: FBGA48P
Text: ¡ Semiconductor MS52C1161A 1998.6 Preliminary 131,072-Word X 8-Bit STATIC RAM + 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1161A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 2,097,152-word by 8-bit electrically switchable 16Mb One Time PROM featuring 2.7V to 3.6V
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MS52C1161A
072-Word
152-Word
MS52C1161A
48-pin
9mmx13mm)
FBGA48P
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29lv160
Abstract: 29lv160 Flash
Text: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time
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HY29LV160
p3-61400755
S-128
29lv160
29lv160 Flash
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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Untitled
Abstract: No abstract text available
Text: TC51WHM516AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
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TC51WHM516AXBN70
152-WORD
16-BIT
TC51WHM516AXBN
432-bit
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Untitled
Abstract: No abstract text available
Text: TC51W6417XB-80,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W6417XB is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high
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TC51W6417XB-80
304-WORD
16-BIT
TC51W6417XB
864-bit
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W964A6BBN
Abstract: W964A6BBN70 W964A6BBN80
Text: W964A6BBN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W964A6BBN
W964A6BBN
W964A6BBN70
W964A6BBN80
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Untitled
Abstract: No abstract text available
Text: HYE18P16161AC-70/85 Graphics & Specialty Memories 16M Async/Page CellularRAM Version 1.8 06.2003 HYE18P16161AC-70/85 16M Async/Page CellularRAM Revision History – V1.31, 11/00 Fully synchronous bus interface with multiplexed address and data, asyncronous write, 1.8V
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HYE18P16161AC-70/85
HYE18P16161AC-70/85
FBGA-40
FBGA-48
FBGA-56
48-ball
56-ball
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FBGA48
Abstract: MS52C182A TSOP44
Text: 1電子デバイス MS52C182A 1998.6 暫定 65,536-WordＸ16-Bit or 131,072-WordＸ8-Bit STATIC RAM ＋ 524,288-WordＸ16-Bit or 1,048,576-WordＸ8-Bit One Time PROM • 概要 MS52C182Aは65,536ワ−ドＸ16ビット／131,072ワ−ドＸ8ビット が切り替え可能な1M
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MS52C182A
536-Word16-Bit
072-Word8-Bit
288-Word16-Bit
576-Word8-Bit
MS52C182A65
RAM524
MS52C182A44TSOP9mmx10mm48FBGA
072-8SRAM
576-8OTP
FBGA48
MS52C182A
TSOP44
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FBGA-484
Abstract: FBGA1152 FBGA896 FBGA676 Actel PQFP208 Actel APA075 import 500k PQFP208 FBGA256 APA150 -TQ1001 datasheet
Text: Application Note AC300 ProASIC to ProASICPLUS® Design Migration Introduction The ProASICPLUS family of FPGAs with FlashLock® combines the advantages of ASICs with the benefits of programmable devices through nonvolatile Flash technology. This enables engineers to create highdensity systems using existing ASIC or FPGA design flows and tools. In addition, the ProASICPLUS family
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AC300
FBGA-484
FBGA1152
FBGA896
FBGA676
Actel PQFP208
Actel APA075
import 500k
PQFP208
FBGA256
APA150 -TQ1001 datasheet
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Untitled
Abstract: No abstract text available
Text: TC51WKM516AXGN75 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WKM516AXGN is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
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TC51WKM516AXGN75
152-WORD
16-BIT
TC51WKM516AXGN
432-bit
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FBGA48
Abstract: M59DR032A M59DR032B
Text: M59DR032A M59DR032B 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase ■ ASYNCHRONOUS PAGE MODE READ
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M59DR032A
M59DR032B
100ns
TSOP48
FBGA48
FBGA48
M59DR032A
M59DR032B
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W964B6BBN
Abstract: W964B6BBN70 W964B6BBN80
Text: W964B6BBN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W964B6BBN
W964B6BBN
W964B6BBN70
W964B6BBN80
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