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    FAST APPLICATIONS HANDBOOK Search Results

    FAST APPLICATIONS HANDBOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F253/B2A Rochester Electronics LLC 54F253 - Multiplexer, F/FAST Series, 2-Func, 4 Line Input - Dual marked (M38510/33908B2A) Visit Rochester Electronics LLC Buy
    54F02DC Rochester Electronics LLC 54F02 - NOR Gate, F/FAST Series, 4-Func, 2-Input, TTL, CDIP14 Visit Rochester Electronics LLC Buy

    FAST APPLICATIONS HANDBOOK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 15J321

    Abstract: 15j321 RG105
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		PDF GT15J321 TRANSISTOR 15J321 15j321 RG105

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    Untitled

    Abstract: No abstract text available
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J121

    transistor equivalent 20j321

    Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
    Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT20J321 transistor equivalent 20j321 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C

    Untitled

    Abstract: No abstract text available
    Text: 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.5A • Very Fast Reverse Recovery Time: trr = 400ns (Max)


    Original     		PDF 1R5NH41 400ns

    Untitled

    Abstract: No abstract text available
    Text: 1NH42 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1NH42 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.0A • Very Fast Reverse Recovery Time: trr = 400ns (Max)


    Original     		PDF 1NH42 400ns

    Untitled

    Abstract: No abstract text available
    Text: 1R5JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5JH45 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.5A z Very Fast Reverse−Recovery Time : trr = 200ns (MAX.)


    Original     		PDF 1R5JH45 200ns

    95J DIODE TOSHIBA

    Abstract: S5295 DIODE 95J S5295B S5295G S5295J
    Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V


    Original     		PDF S5295B S5295G S5295J S5295B, S5295G, S5295B S5295G 95J DIODE TOSHIBA S5295 DIODE 95J S5295J

    Untitled

    Abstract: No abstract text available
    Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V


    Original     		PDF S5295B S5295G S5295J S5295J

    fr1t

    Abstract: No abstract text available
    Text: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,TFR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs


    Original     		PDF DO-41 fr1t

    Toshiba SSD connector

    Abstract: toshiba nand flash 32nm toshiba nand THNSxB030GMSJ toshiba NAND Flash MLC 32nm Toshiba MLC flash toshiba MLC nand flash p9 18w
    Text: Solid State Drive SG2 Series Key Features • • • • • • High capacity in smallest size Fast access and fast transfer rate Low power consumption High reliability Intelligent Interface Data integrity Applications • For slate PCs and mobile equipments


    Original     		PDF 1500G Toshiba SSD connector toshiba nand flash 32nm toshiba nand THNSxB030GMSJ toshiba NAND Flash MLC 32nm Toshiba MLC flash toshiba MLC nand flash p9 18w

    Untitled

    Abstract: No abstract text available
    Text: U05NU44 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE U05NU44 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 1000 z Average Forward Current : IF AV = 0.5A z Very Fast Reverse-Recovery Time : trr = 100 ns (Max)


    Original     		PDF U05NU44

    fr2t diode

    Abstract: 1S1830 1S18 TFR2N FR210
    Text: TFR2N,TFR2T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR2N,TFR2T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse-recovery time: trr = 4 s


    Original     		PDF

    Marking v5j

    Abstract: Marking type AV toshiba marking code transistor
    Text: TVR5B,TVR5G,TVR5J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR5B, TVR5G, TVR5J TV Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 100 V, 400V, 600V • Reverse Recovery Time: trr = 1.5 µs


    Original     		PDF 000707EAA1 Marking v5j Marking type AV toshiba marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, TFR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs


    Original     		PDF DO-41

    TVR4N diode

    Abstract: TVR4J VR4J Toshiba rectifier TVR4N
    Text: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J, TVR4N High Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs


    Original     		PDF 000707EAA1 TVR4N diode TVR4J VR4J Toshiba rectifier TVR4N

    VR1G

    Abstract: No abstract text available
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R - B R O W N <i [ OPA689 ] Wideband, High Gain VOLTAGE LIMITING AMPLIFIER APPLICATIONS FEATURES • FAST RECOVERY FROM OVERDRIVE: 2.4ns TRANSIMPEDANCE WITH FAST OVERDRIVE RECOVERY • LIMITING VOLTAGE ACCURACY: ±15mV FAST LIMITING ADC INPUT DRIVER


    OCR Scan     		PDF OPA689 280MHz OPA688 OPA689

    1R5NH41

    Abstract: No abstract text available
    Text: TO SHIBA 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5N H41 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage : Average Forward Current : If a v = 1.5A Very Fast Reverse-Reeovery Time : trr = 400ns (Max.)


    OCR Scan     		PDF 1R5NH41 400ns 961001EAA2'

    05NU41

    Abstract: No abstract text available
    Text: TOSHIBA 05NU41 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NU41 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v a


    OCR Scan     		PDF 05NU41 100ns 961001EAA2'

    1JH46

    Abstract: No abstract text available
    Text: TOSHIBA 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1J H46 SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 600V :F AV = !-Oa trr = 200ns (Max.)


    OCR Scan     		PDF 1JH46 200ns 961001EAA2'

    1R5NH45

    Abstract: No abstract text available
    Text: TOSHIBA 1R5NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5N H4 5 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time Vr r m -IOOOV ÏF AV = 1-5A


    OCR Scan     		PDF 1R5NH45 200ns 961001EAA2'

    05NH45

    Abstract: No abstract text available
    Text: TOSHIBA 05NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 0 5NH4 5 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time VrrM = io o o v :F AV = 0-5A a Unit in mm


    OCR Scan     		PDF 05NH45 200ns 961001EAA2'

    1NH41

    Abstract: 1NH42
    Text: TOSHIBA 1NH41 TO SHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1N H41 Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm = 1000V Average Forward Current : Ijr AV = 1«0A Very Fast Reverse-Reeovery Time : trr = 400ns (Max.)


    OCR Scan     		PDF 1NH41 400ns 961001EAA2' 1NH42