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    FAIRCHILD TOP MARKING FDJ1032C Search Results

    FAIRCHILD TOP MARKING FDJ1032C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FAIRCHILD TOP MARKING FDJ1032C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: June 2008 FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V


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    PDF FDJ1032C FDJ1032C

    FDJ1032C

    Abstract: SU-001 P-Channel 1.8V MOSFET FLMP fairchild top marking fdj1032c SC75 ATIca
    Text: June 2008 FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V


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    PDF FDJ1032C FDJ1032C SU-001 P-Channel 1.8V MOSFET FLMP fairchild top marking fdj1032c SC75 ATIca

    FDC6020C

    Abstract: fairchild top marking fdj1032c FDJ1032C SC75 P-Channel 1.8V MOSFET FLMP
    Text: FDJ1032C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF FDJ1032C FDC6020C fairchild top marking fdj1032c FDJ1032C SC75 P-Channel 1.8V MOSFET FLMP

    300 V 2 A mosfet datasheet

    Abstract: fairchild top marking fdj1032c FDJ1032C SC75 SU-001 1n002 SU-001-01
    Text: FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V


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    PDF FDJ1032C FDJ1032C 300 V 2 A mosfet datasheet fairchild top marking fdj1032c SC75 SU-001 1n002 SU-001-01