smps 1000W
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits smps design 1000w smps 1000W fet AN-7010 FGP20N60S2D smps 1000w circuit FCP11N60 Equivalent CCM PFC inductor analysis FQA28N50F
Text: www.fairchildsemi.com AN-7010 Choosing Power Switching Devices for SMPS Designs MOSFETs or IGBTs? By Ron Randall, Staff Applications Engineer, Fairchild Semiconductor Introduction Turn-On Losses This article identifies the key parametric considerations for
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AN-7010
smps 1000W
the calculation of the power dissipation for the igbt and the inverse diode in circuits
smps design 1000w
smps 1000W fet
AN-7010
FGP20N60S2D
smps 1000w circuit
FCP11N60 Equivalent
CCM PFC inductor analysis
FQA28N50F
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AN-5014
Abstract: GTLP6C816 VME320 VME64X VME64x connector
Text: Fairchild Semiconductor Application Note July 1999 Revised February 2001 GTLP: Incident Wave Switching and Throughput Abstract The IWS/Throughput Relationship This application note demonstrates, theoretically and empirically, the relationship of the driving device and the
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AN-5014
GTLP6C816
VME320
VME64X
VME64x connector
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FDD86102
Abstract: FDD86
Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.
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FDD86102
FDD86102
FDD86
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fdd86102
Abstract: No abstract text available
Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDD86102
FDD86102
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FDD86102LZ
Abstract: fdd86102
Text: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD
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O-252
O-252)
FDD86102LZ
fdd86102
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FDD86102LZ
Abstract: FDD86102
Text: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD
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FDD86102LZ
FDD86102LZ
FDD86102
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Untitled
Abstract: No abstract text available
Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDD86102
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circuit diagram of mosfet based smps power supply
Abstract: mosfet triggering circuit for inverter FDS6694 optocoupler pnp or npn phototransistor spice model computer smps circuit diagram optocoupler crossreference MOSFET cross-reference high gain low voltage NPN transistor triac spice model
Text: Analog Discrete Interface & Logic Optoelectronics The Innovations Never Stop Contents • Comprehensive New Product List · New Product Highlights · Featured Application · New at fairchildsemi.com Fairchild continues to develop new products, solutions and technologies—just
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Power247TM,
circuit diagram of mosfet based smps power supply
mosfet triggering circuit for inverter
FDS6694
optocoupler pnp or npn
phototransistor spice model
computer smps circuit diagram
optocoupler crossreference
MOSFET cross-reference
high gain low voltage NPN transistor
triac spice model
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Untitled
Abstract: No abstract text available
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
1N4154TR
DO-35
1N4154
DO-35-2
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fdms8848
Abstract: No abstract text available
Text: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m: Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8848NZ
FDMS8848NZ
fdms8848
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FDMS8848NZ
Abstract: No abstract text available
Text: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m: Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8848NZ
FDMS8848NZ
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FCH22N60N
Abstract: FCH22N60 11A 650V MOSFET
Text: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCH22N60N
FCH22N60N
FCH22N60
11A 650V MOSFET
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Untitled
Abstract: No abstract text available
Text: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCH25N60N
FCH25N60N
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FDMS8848NZ
Abstract: No abstract text available
Text: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mΩ Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8848NZ
FDMS8848NZ
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Untitled
Abstract: No abstract text available
Text: FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mΩ Features General Description ̈ Max rDS on = 20.0 mΩ at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDS8882
FDS8882
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FCD9N60
Abstract: No abstract text available
Text: SuperMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precie process
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FCD9N60NTM
FCD9N60NTM
FCD9N60
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FCD9N60NTM
Abstract: FCD9N60N
Text: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process
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FCD9N60NTM
FCD9N60NTM
FCD9N60N
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FCA22N60N
Abstract: No abstract text available
Text: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCA22N60N
150oC
FCA22N60N
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FCA22N60N
Abstract: No abstract text available
Text: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCA22N60N
150oC
FCA22N60N
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fairchild 555
Abstract: fairchild top marking FDMS8672S
Text: FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m: Features General Description The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8672S
FDMS8672S
fairchild 555
fairchild top marking
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS130L
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
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MBRS340
Abstract: No abstract text available
Text: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
MBRS340
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MBRS340
Abstract: No abstract text available
Text: FAIRCHILD S E M I C O N D U C T O R tm MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
MBRS340
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