KBU 106
Abstract: 512-MB1S 512-KBL08 512-MDB6S 512-KBU4M DFB2560 512-KBU4K Fairchild kbu KBU 105 DFB2060
Text: Diodes & Rectifiers Fairchild FAIRCHILD Rectifiers FAST RECOVERY RECTIFIERS CONT. MOUSER STOCK NO. Fairchild Part No. 512-1N4935 512-1N4936 ♦ 512-RGF1G 512-RGP10G 512-1N4937 ♦ 512-RGF1J 512-RGP10K ♦ 512-RGF1M 512-RGP10M 1N4935 1N4936 RGF1G RGP10G 1N4937
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512-1N4935
512-1N4936
512-RGF1G
512-RGP10G
512-1N4937
512-RGF1J
512-RGP10K
512-RGF1M
512-RGP10M
1N4935
KBU 106
512-MB1S
512-KBL08
512-MDB6S
512-KBU4M
DFB2560
512-KBU4K
Fairchild kbu
KBU 105
DFB2060
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ipc 610D
Abstract: IPC-SM-7525A entek ht plus AN-9049 j-std-001d JESD22-B102D Fairchild, leadframe materials 100C IPC7525 J-STD-001C
Text: www.fairchildsemi.com Application Note AN-9049 Assembly Guidelines for Fairchild’s TinyBuck Packaging By Dennis Lang INTRODUCTION BOARD MOUNTING The Fairchild TinyBuck™ package is based on Molded Leadless Packaging MLP technology. This technology
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AN-9049
FAN2103MPX,
FAN2103EMPX,
FAN2106MPX,
FAN2106EMPX,
FAN2106MPX
AA3E249,
FAN2108MPX,
FAN2108EMPX,
FAN21SV06MPX,
ipc 610D
IPC-SM-7525A
entek ht plus
AN-9049
j-std-001d
JESD22-B102D
Fairchild, leadframe materials
100C
IPC7525
J-STD-001C
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8 channel optocouplers
Abstract: coplanarity of sop 4 pin dip switch hcpl2731 equivalent 6N135 6N136 FODM452 FODM453 HCPL0452 HCPL0453
Text: High Performance Optocouplers Fairchild’s Offering Fairchild’s high performance optocouplers have a superior common mode transient immunity advantage >30% over competition . With their high speed data rates, these optocouplers are ideal for high speed data communications. Portable
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220v AC voltage stabilizer schematic diagram
Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
Text: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power
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33008
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM IDS33008 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33008 REV 1-2012 FOR FAIRCHILD SEMICONDUCTOR SuperSOT -8* TM * A TRADEMARK OF FAIRCHILD SEMICONDUCTOR 8 PIN .95 mm PITCH DEVICES NATIONAL SEMI PKG CODE 34
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IDS33008
020in.
33008
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Untitled
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM IDS33008 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL REV 1-2012 FOR FAIRCHILD SEMICONDUCTOR 33008 SuperSOT -8* TM * A TRADEMARK OF FAIRCHILD SEMICONDUCTOR 8 PIN .95 mm PITCH DEVICES NATIONAL SEMI PKG CODE 34
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IDS33008
020in.
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IPC-SM-7525A
Abstract: ipc 610D IPC-7525 J-STD-001C IPC-4101B entek ht plus JSTD001D 7525A smt j-std-001d IPC610D
Text: AN-9048 Assembly Guidelines for Fairchild’s 6x6 DriverMOS Packaging By Dennis Lang INTRODUCTION The Fairchild 6x6 DriverMOS package is based on Molded Leadless Packaging MLP technology. This technology has been increasingly used in packaging for power related products due to its
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AN-9048
IPC-A-610-D,
J-STD-001D,
IPC-SM-7525A,
JESD22-B102D,
FDMF6700,
FDMF6704,
FDMF6704A,
FDMF6704V,
FDMF6730
IPC-SM-7525A
ipc 610D
IPC-7525
J-STD-001C
IPC-4101B
entek ht plus
JSTD001D
7525A smt
j-std-001d
IPC610D
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Untitled
Abstract: No abstract text available
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V
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FGH25N120FTDS
FGH25N120FTDS
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FGA20N120FTD
Abstract: No abstract text available
Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V
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FGA20N120FTD
FGA20N120FTD
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Untitled
Abstract: No abstract text available
Text: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V
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FGA25N120FTD
FGA25N120FTD
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Untitled
Abstract: No abstract text available
Text: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • • RoHS compliant This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced
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HUF75344A3
HUF75344A3
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FGPF4633
Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
Text: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)
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O-220F
512-FGPF4633TU
512-FGD4536TM
512-HGTP7N60B3D
O-252
512-HGT1S20N60C3S9A
512-FGP20N60UFDTU
512-FGAF40N60UFDTU
FGPF4633
FGH40N60SFD
fgpf50n33
FGA25N120
FGH60N60
fga70n33
fgd4536
FGH60N60SFD
FGH40N60
fgh80n60
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Untitled
Abstract: No abstract text available
Text: FGA15N120FTD tm 1200V, 15A Field Stop Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.58V @ IC = 15A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V
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FGA15N120FTD
FGA15N120FTD
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diode sd pd
Abstract: No abstract text available
Text: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD4P25TM
FQU4P25
-250V,
diode sd pd
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FSA642
Abstract: DPDT 5V QVSOP48 xFP STM-64 UMLP-10 30v analog switch DPDT QVSOP-48 FSA110 FSA1208 FSA203
Text: Fairchild’s Switch Selection Guide FSC Part Number FSA110 FSA201 FSA203* FSA221* FSA223* FSA642 Application Specific FSSD06 FSA1208 FSA1211 Multimedia Switches with Negative Swing Capability Low RON Analog/Audio Switches Negative Swing Audio Switches
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FSA110
FSA201
FSA203*
FSA221*
FSA223*
FSA642
FSSD06
FSA1208
FSA1211
FSA1156
FSA642
DPDT 5V
QVSOP48
xFP STM-64
UMLP-10
30v analog switch DPDT
QVSOP-48
FSA110
FSA1208
FSA203
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Untitled
Abstract: No abstract text available
Text: FAN100 Primary-Side-Control PWM Controller Features Description • Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry • Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT Technique
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FAN100
FAN100
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FDS6898AZ-F085
Abstract: FDS6898AZ
Text: FDS6898AZ_F085 tm Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored
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FDS6898AZ
FDS6898AZ-F085
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FQD8P10TM
Abstract: No abstract text available
Text: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD8P10TM
-100V,
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AN-6067
Abstract: No abstract text available
Text: FAN100 Primary-Side-Control PWM Controller Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT Technique ̇ ̇
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FAN100
FAN100
AN-6067
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FQD12P10TM_F085
Abstract: FQD12P10TM
Text: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD12P10TM
-100V,
FQD12P10TM_F085
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EZ1016A
Abstract: No abstract text available
Text: FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT Technique
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FSEZ1016A
FSEZ1016A
EZ1016A
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400v p-channel mosfet
Abstract: No abstract text available
Text: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD3P50TM
-500V,
400v p-channel mosfet
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Untitled
Abstract: No abstract text available
Text: tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored
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FDS6898AZ
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FQD19N10L
Abstract: FQU19N10L
Text: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD19N10L
FQU19N10L
FQU19N10L
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