pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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8038 ic
Abstract: ic 8038 APPLICATIONS ic 8038 of ic 8038 lc 8038 BCF29 BCF30 8038 ic applications D024500
Text: •I fafa53T31 OOEHMT? ?□ H A P X N AMER PHILIPS/DISCRETE BCF29 BCF30 b7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level, low noise general purpose applications in thick and thin-film circuits.
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fafa53T31
BCF29
BCF30
BCF29
7Z68043
i99ij
8038 ic
ic 8038 APPLICATIONS
ic 8038
of ic 8038
lc 8038
BCF30
8038 ic applications
D024500
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BUK455
Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53T31
BUK455-600A
BUK455-600B
T-21-i3
BUK455
-600A
-600B
BUK455 600b
T0220AB
BUK455 600
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Untitled
Abstract: No abstract text available
Text: 2TE D NAPC/ SIGNETICS Signetics • bb S3 T24 005405=1 T ■ T-V9-V7-/V SCN68000 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION The SCN68000 is the first implementa tion of the S68000 1 6 /3 2 bit micropro cessor architecture. The SCN68000 has
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SCN68000
16-/32-Bit
SCN68000
S68000
16-bit
24-bit
32-bit
SCN68008
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Untitled
Abstract: No abstract text available
Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.
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BD934F;
BD936F
BD938F;
BO940F
BD942F
S0T186
BD933F,
BD935F,
BD937F,
BD939F
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mute detector
Abstract: trick BT 140 TDA9715H VID 200-12 S4 FB G044 3T24 AG34 VS38 din 45324
Text: NAPC/PHILIPS SEMICOND b3E D m b b S B ^ M ÜÜ77L7M G23 M S I C 3 Philips Semiconductors Preliminary specification Y/C one-chip processor VHS standard TDA9715H/A FEATURES • Luminance noise reduction (YNR) • Chrominance noise reduction (CNR) • Saturation dependent writing
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77L7M
TDA9715H/A
TDA9715H/A
mute detector
trick BT 140
TDA9715H
VID 200-12 S4
FB G044
3T24
AG34
VS38
din 45324
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CNX48
Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Text: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features
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bbS3T31
CNX48
CNX48U.
7Z88208
CNX48
transistor 115 25e
diode h5e
CNX48U
SOT-90B
4t85
CNX48 U
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K963
Abstract: ECG1296
Text: ITE PHILIPS E C G INC 0 • htSaiSB 0005175 S ■ ECG1296 S e m ic o n d u c to r s T V Chrom a P rocesso r/D em odu lato r Features • N o A G C or killer adjustm ent necessary • Transform erless V C O Ab so lu te M a x im u m R atin gs TA =25°C Sy m b o l
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0DQS175
ECG1296
T-77-07-09
90mVp-P
bt53TSÃ
DDDS17M
ECG1296
K963
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BF410
Abstract: BF410A BF410B BF410C BF410D
Text: BF410A to D _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical IM-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications up to the VHF range. These FETscan be supplied in fo u r IDSS groups. Special features are the low feedback capacitance and
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BF410A
BF410
BF410A
fafa53Â
BF410B
BF410C
BF410D
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74LVT244PW
Abstract: 74LVT244DB 74lvt244 Philips 74LVT244 74LVT244D LVT244 74lvt244D Philips 74lvt244Philips
Text: NAPC/PHILIPS SEMICOND b3E • T> bbS3T24 0064122 Philip« Sem iconductors Low Voltage Product* 347 3.3V A B T Octal buffer/line driver 3-State FEATURES • • • • • Octal bus interface 3-State buffers Output capacity: +64mA/-32mA TTL input and output switching levels
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bbS3124
74LVT244
64mA/-32mA
500mA
74LVT
510MHz
500ns
74LVT244PW
74LVT244DB
74lvt244 Philips
74LVT244
74LVT244D
LVT244
74lvt244D Philips
74lvt244Philips
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Untitled
Abstract: No abstract text available
Text: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for
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BLU86
OT223
bbS333
003SlbT
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BUK455-600B
Abstract: BUK455-600A BUK455 T0220AB
Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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00SD515
BUK455-600A
BUK455-600B
T-21-13
BUK455
-600A
-600B
BUK455-600B
BUK455-600A
T0220AB
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