L69A
Abstract: L69C ECG1824 L75B ECG1823 18pin TFT module ECG1819 ECG1871 ECG1815 ECG1814
Text: PHILIPS E C INC 6 3EE D B fab53*12ù 0Q0b77S 7 CMECG T ~ 7 7 '2 i 1C and M odule Circuits cont'd ECG1814 18-Pin DIP See Fig. L115A VCR Color Signal Processor (CMOS), V d d = 5 V Typ VDD D ECG1815 AF PO, 20 W, V cc= ±23 V, R l = 8 Q ;ri B U R S T G ATE
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0aDb775
ECG1814
18-Pin
L115A
ECG1816
ECG1817
ECG1818
ECG1819
ECG1871
L69A
L69C
ECG1824
L75B
ECG1823
18pin TFT module
ECG1815
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ir receiver philips
Abstract: Ecg1237
Text: PHILIPS E C 6 INC 17E T -7 7 -0 5 -0 5 ECG ECG1237 A M RADIO RECEIVER Semiconductors 14 13 M FEATURES! • T U N IN G METER CIRCUIT • WIDE A G C RANGE fab53iaa 0D0M77E 2 II 10 9 .296" 6.9 MAX. 4 1 2 p 3 4 9 6 7 027"(2I)MAX. .627"(2I)M AX« - . * j
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fab53iaa
0D0M77E
ECG1237
ECG1237
bb5312fl
ir receiver philips
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BTV58-600R
Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
Text: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are
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BTV58
T0-220AB
BTV58â
1000R
BTV58-600R
transistor BU 921 T
DIODE 25PH 200
gate turn off thyristors
600R
M1601
M1602
25ls gt
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PKB3001U
Abstract: PTB32001X
Text: N AMER PHILIPS/DISCRETE ObE D • fab53131 G01507cl 4 ■ MAINTENANCE TYPE PKB3001U for new design use PT632001X T > 3 3 -O S r * < „ MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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PTB32001X)
PKB3001U
PKB3001U
PTB32001X
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BF939
Abstract: 60S2 N322 transistor BF939 n3220
Text: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.
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BF939.
001E354
BF939
60S2
N322
transistor BF939
n3220
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PBYR740
Abstract: M3202 M3201 PBYR735 PBYR745
Text: PBYR735 PBYR740 PBYR745 N AMER PHI LIPS/DISCRETE 2SE D 1 fab53131 0022157 1 • T-Ô Z- 17 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in
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PBYR735
PBYR740
PBYR745
b5313Ã
M3202
M3201
PBYR745
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K 3699 transistor
Abstract: BLY88A 3699 npn pscw
Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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GGmi32
BLY88A
K 3699 transistor
BLY88A
3699 npn
pscw
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TDA4565
Abstract: TDA4555 TDA4650 TDA4670 TDA4680 TDA4685 TDA4686 TDA4686WP 12C-bus 15354 time switch
Text: b3E D NAPC/PHILIPS SEMICOND • ^53*124 D07Ö4MM 411 W Ë S I C 3 Preliminary specification Philip* Sem iconductor* Video Products Video processor, with automatic cut-off control FEATURES TDA4686 • Cut-off measurement pulses after end of the vertical blanking pulse or end of an
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TDA4686
XV120Hz)
TDA4565
TDA4555
TDA4650
TDA4670
TDA4680
TDA4685
TDA4686
TDA4686WP
12C-bus
15354 time switch
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IC 2561 D 431
Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Text: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures
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BFG93A;
BFG93A/X;
BFG93A/XR
BFG93A
BFG93
BFG93A/X
MSB014
OT143.
IC 2561 D 431
NK 0609 tf
1053 transistor equivalent table
1377 transistor
Philips FA 261
lc 945 p transistor NPN TO 92
lc 945 p transistor NPN
lc 945 p transistor
BFG93A
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IEC134
Abstract: LAE4002S
Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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LAE4002S
OT-100.
L-13-â
Zo-50n
IEC134
LAE4002S
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BUK454-600A
Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
Text: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-600A
BUK454-600B
BUK454
-600A
-600B
T-39-17
1-fjv
T0220AB
BUK454-600
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SCN68000C8N64
Abstract: CZ 5.0VDC SCN68000C6A68 DAN-101 SCN68000 S68000 ls- 11m scn680 scn68020 SCN68000C8I64
Text: 2TE D NAPC/ SIGNETICS • b b S 3 T 24 005405=1 T ■ T-V9-V7-/V SCN68000 Signetics 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION PIN CONFIGURATION The SCN68000 is the first implementa tion of the S68000 1 6 /3 2 bit micropro
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SCN68000
16-/32-Bit
SCN68000
S68000
16-bit
24-bit
32-bit
SCN68008
SCN68000C8N64
CZ 5.0VDC
SCN68000C6A68
DAN-101
ls- 11m
scn680
scn68020
SCN68000C8I64
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BZV85
Abstract: c8v2 BB531 c9v1
Text: N AMER PHILIPS/DISCRETE SSE D • bb53T31 OOlbTBI Q ■ BZV85 SERIES A _ T-// -/ 3 VOLTAGE REGULATOR DIODES V - Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended fo r stabilization purposes. The series covers the normalized E24 ± 5% range o f nominal working voltages
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BZV85
DO-41
7Z82194
c8v2
BB531
c9v1
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BF994 M94
Abstract: BF994 FET MARKING CODE
Text: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and
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Q0i30Qa
BF994
BF994 M94
BF994
FET MARKING CODE
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HORIZONTAL DRIVER TRANSISTOR
Abstract: philips 7ff2 ECG852 ecg649 pin diagram of lt 542 transistor driver horizontal ECG815 734 10 pins
Text: J. 17E D • PHILIPS E C G INC bb53is a OOQSOtH 5 ECG852 IMo Hold Control, V e rt/H o riz Circuit S em ico n d u cto rs Features • No frequency setup required for horizontal or vertical • Ceramic resonator frequency reference • Accurate horizontal pre-driver duty
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bbS315Ã
ECG852
ECG852
HORIZONTAL DRIVER TRANSISTOR
philips 7ff2
ecg649
pin diagram of lt 542
transistor driver horizontal
ECG815
734 10 pins
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ECG942
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E ECG 14 is I2 il io 9 .2 8 0 " 7 .ll MAX. I I 2 3 4 5 -J Rating Unit Supply Voltage +40 V Power Dissipation (Note 1) 715 mW Oto 70 °C -65 to +150 °C 300 °C N ote 1 i For operation in ambient tem peratures above 2 5 °C , the E C G 9 4 2 must
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fab53iafl
ECG942
120dB
ECG942
T-74-09-07
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D IS CRETE - E5E D • 1^53=131 D D i m O S Q ■ I BD242; BD242A BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier
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BD242;
BD242A
BD242B;
BD242C
BD241C.
BD242
T-33-19
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ECG1067
Abstract: No abstract text available
Text: 17E ¿y • PHILIPS E C G INC ELECTRICAL CHARACTERISTICS To = 25°C MAXIMUM RATINGS (To = 25°C ) ITEM I 13-1 III RATING ITEM UNIT + 15.6. V + 41 mA Ito t + 1 5.6, 0 V Vi V is- i + 5 , - 5 V V» V !«-! + 6 , - 5 V Ij + 0 .1 , - 1 0 mA V 15-1 MIN. TYP.
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T-77-07-09
-40dB
ECG1067
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bsx20
Abstract: No abstract text available
Text: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO
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bb53T31
0Q134AS
BSX19
BSX20
lcb53T31
00124Tb
bsx20
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Untitled
Abstract: No abstract text available
Text: P rod uct sp e c ific a tio n P h ilip s S e m icon ducto rs CNR50 Dedicated IC-optocoupler FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum
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CNR50
E90700
BS415
BS7002
BS5301
bb53T31
003533b
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ECQ1275
Abstract: ecg1276 car voltage stabilizer ECG1170 ECG1275 A420F philips audio power amplifier ic
Text: PHILIPS E C G INC 17E ß m bbSBTSfl DOOMÒS11] 3 ECG E C G 1275 5.8 W A udio Pow er Am plifier S e m ic o n d u c t o r s Features • H igh output power: P0 = 5.8 W Typ. • Few external com ponents required capacitors only • Low noise: V n o “ 1-4 m Vrm s Typ.
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ECQ1275
ECQ127S
ECG1275
ecg1276
car voltage stabilizer
ECG1170
ECG1275
A420F
philips audio power amplifier ic
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ECG129
Abstract: ECG1549 VU peak hold ECG1509 Peak LED level meter driver ic 50 led VU meter 20 led VU meter transistor 45406 30 led VU meter stereo ECG1649
Text: PHILIPS E C G INC 17E ECG Semiconductors Features • Fast responding electronic VU meter • Drives LED s, LC D s, or vacuum fluorescents • Bar or dot display mode externally selectable by user • Expandable to displays of 70 dB • Internal voltage reference from 1,2 V
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10-step
ECG1549
ECG519
ECG519
ECG1649
ECG129
ECG1549
VU peak hold
ECG1509
Peak LED level meter driver ic
50 led VU meter
20 led VU meter transistor
45406
30 led VU meter stereo
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L31A
Abstract: 131H BUS131 BUS131A BUS131H
Text: • DEVELOPMENT DATA ^53=131 GGia7b7 7 ■ [I This data sheet contains a v a n c e in form ation and specifications are subject to change w ith o u t notice. BUS131 SERIES N AMER PHILIPS/DISCRETE 2SE D T - 33-/3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO -3 envelope, intended fo r use in very fast
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BUS131
T-33-/3
BUS131H
L31A
131H
BUS131A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D btiSBTBl QDISTSE 1 BSR17 BSR17A -T -3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica tions in thick and thin-film circuits. QUICK REFERENCE DATA
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BSR17
BSR17A
fab53131
T-35-li
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