Untitled
Abstract: No abstract text available
Text: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT30M85SVR
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APT60GT60JR
Abstract: No abstract text available
Text: APT60GT60JR 600V Thunderbolt IGBT 93A E E The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized"
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APT60GT60JR
150KHz
APT60GT60JR
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APT5015BLC
Abstract: No abstract text available
Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT5015BLC
O-247
O-247
APT5015BLC
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APT10086BLC
Abstract: APT10086SLC
Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
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APT10086BLC
APT10086SLC
O-247
O-247
APT10086
APT10086BLC
APT10086SLC
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APT5017
Abstract: APT5017BLC APT5017SLC
Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
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APT5017BLC
APT5017SLC
O-247
O-247
APT5017
APT5017
APT5017BLC
APT5017SLC
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APT5014
Abstract: APT5014B2LC APT5014LLC
Text: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
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APT5014B2LC
APT5014LLC
O-264
O-264
APT5014
O-247
APT5014
APT5014B2LC
APT5014LLC
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Untitled
Abstract: No abstract text available
Text: 0257^0^ DDDED43 340 • A dvanced P o w er Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D60K 600V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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DDDED43
APT15D60K
T0-220
O-22QAB
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Untitled
Abstract: No abstract text available
Text: APT4012BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 4oov 37a 0.1200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT4012BVR
O-247
MIL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT10050LVR
O-264
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Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER a Te c h n o l o g y APT8018JN ISOTOP' POWER MOS IV® 800V 40A 0.18Í2 S Ù " U L DIE Recognized" File No. E145592 S SINGLE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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Untitled
Abstract: No abstract text available
Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5014LVR
O-264
O-264AA
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Untitled
Abstract: No abstract text available
Text: ADVANCED P o w er Te c h n o lo g y APT2X60D40J 400V 60A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode
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APT2X60D40J
OT-227
OT-227
M4H100
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Untitled
Abstract: No abstract text available
Text: APT5028SVR A dvanced po w er Te c h n o l o g y 500V 20A 0.280Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5028SVR
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Untitled
Abstract: No abstract text available
Text: APT6040BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 6oov i6 a o.4oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT6040BVR
O-247
MIL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5024BVR
O-247
O-247AD
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Untitled
Abstract: No abstract text available
Text: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8030LVR
O-264
O-264AA
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Untitled
Abstract: No abstract text available
Text: A P T 8075B V R ADVANCED W 7Æ P o w e r Te c h n o l o g y soov i2 a 0.7500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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8075B
O-247
APT8075BVR
MIL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT5012JNU2
5012JNU2
OT-227
Page68
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APT10M13JNR
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y APT10M13JNR 100V 150A 0.013Û APT10M15JNR 100V 140A 0.015Ü ISOTOP® "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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APT10M13JNR
APT10M15JNR
E145592
APT10M13JNR
APT10M15JNR
OT-227
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Untitled
Abstract: No abstract text available
Text: APT15GT60 BR • R A dvanced W A P o w er T e c h n o lo g y 6oov 3o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT15GT60
150KHz
APT15GT60BR
200nH,
IL-STD-750
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Untitled
Abstract: No abstract text available
Text: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .
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APT5027SNR
100mS
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Untitled
Abstract: No abstract text available
Text: APT30GT60KR A dvanced W 7Æ P o w e r Te c h n o lo g y • R 6oov 55a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT30GT60KR
150KHz
itter-Collector50
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT20M22JVR ADVANCED P o w er T e c h n o lo g y 200V 97A 0 .0220. POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT20M22JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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APT8075SN
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